New Trends in Spintronic Materials and Devices

A special issue of Magnetochemistry (ISSN 2312-7481). This special issue belongs to the section "Spin Crossover and Spintronics".

Deadline for manuscript submissions: closed (31 January 2024) | Viewed by 2818

Special Issue Editors

Center for Integrated Spintronic Devices, Hangzhou Dianzi University, Hangzhou 310018, China
Interests: spintronic materials; magnetic sensor; current sensor; wearable electronic devices and intelligent systems

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Guest Editor
Center for Integrated Spintronic Devices, Hangzhou Dianzi University, Hangzhou 310018, China
Interests: MRAM; spin orbit torque; antiferromagnet

Special Issue Information

Dear Colleagues,

This Special Issue of Magnetochemistry is on the theme of “New Trends in Spintronic Materials and Devices”. Spintronics is one of the major research directions that holds potential beyond the von Neumann architecture, which makes use of the spin and magnetic moment of the electron to create high-performance materials and useful sensors and memory and logic devices with properties not possible with charge-based devices. This Special Issue covers the theoretical simulation, preparation, and physical understanding of spintronic materials; the design and physical mechanism of spintronic devices including sensors, isolators, and memory devices; as well as their applications. We hope this Special Issue will initiate and promote wider academic communication in advanced spintronic materials and devices as well as their relevant frontier research areas.

Current-Induced Spin–Orbit Torques:

Spin–orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. SOT mediates the transfer of angular momentum from the lattice to the spin system, leading to sustained magnetic oscillations or switching of ferromagnetic as well as antiferromagnetic structures. It provides an efficient and scalable means for the electrical manipulation of magnetic order, domain walls, and skyrmions. It provides evidence of the microscopic interactions between charge and spin in a variety of materials and opens novel strategies to design spintronic devices with potentially high impact in data storage, nonvolatile logic, and magnonic applications. Over the past decade, to achieve a larger SOT efficiency, SOT in various systems has been explored, including metals, semiconductors, and topological insulator systems. Further, unusual SOT (generated by out-of-plane spin polarization) are observed in certain systems such as antiferromagnetic materials and low-dimensional materials, which add a new spin degree of freedom to the manipulation of the magnetization, especially in realizing field-free switching of perpendicular magnetization. This Special Issue reviews the current status and future perspectives of the field of spin–orbit torque.

Dr. Ru Bai
Dr. Yongming Luo
Guest Editors

Manuscript Submission Information

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Keywords

  • spintronic materials
  • spintronic devices
  • current sensor
  • intelligent system
  • spin–orbit torque

Published Papers (2 papers)

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Research

13 pages, 2819 KiB  
Article
Equivalent Noise Analysis and Modeling for a Magnetic Tunnel Junction Magnetometer with In Situ Magnetic Feedback
by Aiyu Dou, Ru Bai, Yucheng Sun, Jiakun Tu, Chuanjia Kou, Xin Xie and Zhenghong Qian
Magnetochemistry 2023, 9(10), 214; https://doi.org/10.3390/magnetochemistry9100214 - 29 Sep 2023
Viewed by 1176
Abstract
Magnetic tunnel junction (MTJ) sensors have been one of the excellent candidates for magnetic field detection due to their high sensitivity and compact size. In this paper, we design a magnetometer with in situ magnetic feedback consisting of an MTJ sensor. To analyze [...] Read more.
Magnetic tunnel junction (MTJ) sensors have been one of the excellent candidates for magnetic field detection due to their high sensitivity and compact size. In this paper, we design a magnetometer with in situ magnetic feedback consisting of an MTJ sensor. To analyze and evaluate the detectivity of the MTJ magnetometer, a noise model of the MTJ sensor in the magnetometer without magnetic feedback is first developed. Then, the noise model of the MTJ magnetometer with in situ magnetic feedback is also established, including the noises of the MTJ sensor and the signal conditioning circuit, as well as the feedback circuit. The equivalent noise model of the MTJ magnetometer with in situ magnetic feedback is evaluated through nonlinear fitting for the noise voltage spectrum. Although the noise generated by the MTJ sensor is much greater than that of the signal conditioning circuit, the noise introduced by the feedback coils into the MTJ sensor is slightly more than twice that generated by the MTJ sensor itself. The measurement results show that the detectivity of the MTJ magnetometer with in situ magnetic feedback reaches 526 pT/Hz1/2 at 10 Hz. The equivalent noise analysis method presented in this paper is suitable for the detectivity analysis of magnetometers with magnetic feedback. Full article
(This article belongs to the Special Issue New Trends in Spintronic Materials and Devices)
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19 pages, 6077 KiB  
Article
Spin-Topological Electronic Valve in Ni/hBN–Graphene–hBN/Ni Magnetic Junction
by Yusuf Wicaksono, Halimah Harfah, Gagus Ketut Sunnardianto, Muhammad Aziz Majidi and Koichi Kusakabe
Magnetochemistry 2023, 9(5), 113; https://doi.org/10.3390/magnetochemistry9050113 - 25 Apr 2023
Cited by 1 | Viewed by 1133
Abstract
A spin-topological electronic valve was discovered in a Ni/hBN–graphene–hBN/Ni magnetic junction to control the in-plane conductance of graphene. By manipulating the mass-gapped Dirac cone (MGDC) of graphene’s topology using the magnetic proximity effect, the spin-topological electronic valve was made possible. The first-principles investigation [...] Read more.
A spin-topological electronic valve was discovered in a Ni/hBN–graphene–hBN/Ni magnetic junction to control the in-plane conductance of graphene. By manipulating the mass-gapped Dirac cone (MGDC) of graphene’s topology using the magnetic proximity effect, the spin-topological electronic valve was made possible. The first-principles investigation was conducted to show how the mechanism of graphene’s MGDC is controlled. Twelve stacking configurations for the anti-parallel configuration (APC) and parallel configuration (PC) of the magnetic alignment of Ni slabs were calculated using spin-polarized density functional theory. Three groups can be made based on the relative total energy of the 12 stacking configurations, which corresponds to a van der Waals interaction between hBN and graphene. Each group exhibits distinctive features of graphene’s MGDC. The configuration of the Ni(111) surface state’s interaction with graphene as an evanescent wave significantly impacts how the MGDC behaves. By utilizing the special properties of graphene’s MGDC, which depend on the stacking configuration, a controllable MGDC using mechanical motion was proposed by suggesting a device that can translate the top and bottom Ni(111)/hBN slabs. By changing the stacking configuration from Group I to II and II to III, three different in-plane conductances of graphene were observed, corresponding to three non-volatile memory states. This device provides insight into MJs having three or more non-volatile memory states that cannot be found in conventional MJs. Full article
(This article belongs to the Special Issue New Trends in Spintronic Materials and Devices)
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