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Recent Advances in Packaging, Insulation, and Reliability of High Voltage...
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Recent Advances in Packaging, Insulation, and Reliability of High Voltage Power Electronic Devices

A special issue of Energies (ISSN 1996-1073). This special issue belongs to the section "A1: Smart Grids and Microgrids".

Deadline for manuscript submissions: closed (31 December 2022) | Viewed by 7124

Special Issue Editor

Dr. Yalin Wang

E-Mail Website
Guest Editor
1. Department of Electrical Engineering, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
2. Key Laboratory of Control of Power Transmission and Conversion (SJTU), Ministry of Education, Shanghai 200240, China
Interests: charge transport of insulating materials; state detection and intelligent diagnosis of power equipment; insulation design and condition monitoring of electric aircraft propulsion motor; insulation; reliability of power electronics package
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

With the development of new energy power systems, energy Internet, the conversion, transmission and grid connection of renewable energy have become urgent needs for the development of a smarter power system. The use of high-voltage power devices for power conversion can improve the efficiency and quality of power consumption, and provide key support for reducing carbon emissions, improving power density, and facilitating energy shortages. In general, high-voltage power devices have the characteristics of high-rated voltage and large current, and the converters formed by them are smaller in size and higher in power density than traditional electric energy conversion equipment, which reduces engineering investment costs. Wide-bandgap power semiconductors represented by Silicon Carbide (SiC) and Gallium Nitride (GaN) have the advantages of high breakdown field strength, low switching loss, and strong temperature and weather resistance. The use of wide-bandgap power semiconductors can further improve the conversion efficiency, power density, and reliability of high-voltage power modules. However, limited by the research and development of packaging technology, the performance of the existing high-voltage power module is far from reaching the limit of wide-bandgap semiconductor materials. One of the bottlenecks to be solved is the high-voltage reliability of power devices under complex electrical, thermal, and mechanical coupling stress. Therefore, this Special Issue focuses on Recent Advances in Packaging, Insulation, and Reliability of High Voltage Power Electronic Devices. In this Special Issue, original research articles and reviews are welcome. Research areas may include (but are not limited to) the following: high voltage packaging insulation, condition monitoring of power devices, reliability and failure of power devices, multi-physics analysis of power module packaging, and applications of high voltage power devices.

Dr. Yalin Wang
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Energies is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • power module/devices
  • packaging
  • reliability
  • insulating materials
  • condition monitoring
  • insulation design
  • high voltage
  • solid-state transformer
  • SiC/GaN devices
  • IGBT
  • partial discharge
  • space charge
  • aging

Published Papers (2 papers)

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Research

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19 pages, 5820 KiB  
Article
Optimization Design of Packaging Insulation for Half-Bridge SiC MOSFET Power Module Based on Multi-Physics Simulation
by Wenyi Li, Yalin Wang, Yi Ding and Yi Yin
Energies 2022, 15(13), 4884; https://doi.org/10.3390/en15134884 - 3 Jul 2022
Cited by 7 | Viewed by 2180
Abstract
With the development of power modules for high voltage, high temperature, and high power density, their size is becoming smaller, and the packaging insulation experiences higher electrical, thermal, and mechanical stress. Packaging insulation needs to meet the requirement that internal electric field, temperature, [...] Read more.
With the development of power modules for high voltage, high temperature, and high power density, their size is becoming smaller, and the packaging insulation experiences higher electrical, thermal, and mechanical stress. Packaging insulation needs to meet the requirement that internal electric field, temperature, and mechanical stress should be as low as possible. Focusing on the coupling principles and optimization design among electrical, thermal, and mechanical stresses in the power module packaging insulation, a multi-objective optimization design method based on Spice circuit, finite element field numerical calculation, and multi-objective gray wolf optimizer (MOGWO) is proposed. The packaging insulation optimal design of a 1.2 kV SiC MOSFET half-bridge power module is presented. First, the high field conductivity characteristics of the substrate ceramic and encapsulation silicone of the packaging insulation material were tested at different temperatures and external field strengths, which provided the key insulation parameters for the calculation of electric field distribution. Secondly, according to the mutual coupling principles among electric–thermal–mechanical stress, the influence of packaging structure parameters on the electric field, temperature, and mechanical stress distribution of packaging insulation was studied by finite element calculation and combined with Spice circuit analysis. Finally, the MOGWO algorithm was used to optimize the electric field, temperature, and mechanical stress in the packaging insulation. The optimal structural parameters of the power module were used to fabricate the corresponding SiC MOSFET module. The fabricated module is compared with a commercial module by the double-pulse experiment and partial discharge experiment to verify the feasibility of the proposed design method. Full article
(This article belongs to the Special Issue Recent Advances in Packaging, Insulation, and Reliability of High Voltage Power Electronic Devices)
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Review

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23 pages, 7621 KiB  
Review
Reliability of Wide Band Gap Power Electronic Semiconductor and Packaging: A Review
by Yalin Wang, Yi Ding and Yi Yin
Energies 2022, 15(18), 6670; https://doi.org/10.3390/en15186670 - 13 Sep 2022
Cited by 21 | Viewed by 4545
Abstract
Wide band gap (WBG) power electronic devices, such as silicon carbide metal–oxide–semiconductor field-effect transistors (SiC MOSFETs) and gallium–nitride high-electron-mobility transistors (GaN HEMTs) have been widely used in various fields and occupied a certain share of the market with rapid momentum, owing to their [...] Read more.
Wide band gap (WBG) power electronic devices, such as silicon carbide metal–oxide–semiconductor field-effect transistors (SiC MOSFETs) and gallium–nitride high-electron-mobility transistors (GaN HEMTs) have been widely used in various fields and occupied a certain share of the market with rapid momentum, owing to their excellent electrical, mechanical, and thermal properties. The reliability of WBG power electronic devices is inseparable from the reliability of power electronic systems and is a significant concern for the industry and for academia. This review attempts to summarize the recent progress in the failure mechanisms of WBG power electronic semiconductor chips, the reliability of WBG power electronic packaging, and the reliability models for predicting the remaining life of WBG devices. Firstly, the typical structures and dominant failure mechanisms of SiC MOSFETs and GaN HEMTs are discussed. This is followed by a description of power electronic packaging failure mechanisms and available packaging materials for WBG power electronic devices. In addition, the reliability models based on physics-of-failure (including time-dependent dielectric breakdown models, stress–strain models, and thermal cycling models), and data-driven models are introduced. This review may provide useful references for the reliability research of WBG power devices. Full article
(This article belongs to the Special Issue Recent Advances in Packaging, Insulation, and Reliability of High Voltage Power Electronic Devices)
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