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State of the Art and Future Trends in Low and...
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State of the Art and Future Trends in Low and High Power Electronics

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Power Electronics".

Deadline for manuscript submissions: closed (15 April 2023) | Viewed by 4647

Special Issue Editor

Dr. Vallivedu Janardhanam

E-Mail Website
Guest Editor
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 54896, Korea
Interests: 2D materials; photodiodes; high-power devices; Schottky diodes; electrical properties; microstructural characterization; post-Si CMOS devices

Special Issue Information

Dear Colleagues,

We are pleased to announce that we are seeking high-quality novel research and review articles for a Special Issue on the state of the art and future trends in low- and high-power electronics.

Power electronics technology is related to efficient conversion, accurate control and conditioning of electric power from the source to the load. This technology enables energy saving, energy generation and distribution from renewable sources such as solar and wind energy. The power electronics technology covers a power range from very high Giga-watt power such as energy transmission, propulsion systems for ships, high-speed trains, etc., down to the very low milliwatt power required to operate domestic appliances, mobile phones or LED lighting. Power semiconductor devices are the key electronic components used in power electronic systems. Power electronic devices are expected to play a fundamental role in unlocking the potentialities of smart power-systems. Power device technology development includes various device types such as the fast recovery diode, super junction transistor, low-voltage MOSFET, IGBT and wide bandgap technologies (GaN, SiC, Ga2O3 and diamond) with the new-generation power chips being reduced in chip volume. Power devices are still the driving technology for energy saving and system miniaturization, contributing significantly to sustainable improvement of the environment.

Low-Power Electronics

There are new, widespread lifestyle trends in global society as a result of the rapid progress in semiconductor electronics technology. Humans are becoming increasingly connected through communication networks and intelligent electronic terminals that are accessible anywhere. Low-power electronics plays a key role in modern communication and electronic systems, and the related research is multifaceted. The low-power electronics segment is pushed by consumer electronics, automotive auxiliary systems, and small power industrial applications. The present issue will provide a broader view of the current developments of low-power electronics and its future trends.

High-Power Electronics

The prerequisite for high-performance power switching electronics has increased alongside the imminent electrification of the current transport systems, grid-scale energy-storage, industrial machinery control, and military systems. Recent trends within modern society, such as energy efficiency, E-mobility, digitalization, and SMART grid, demand the green power electronic solutions. Power semiconductor devices are empowering the technology to meet these necessities. In this connection, there is an urgent need for the development of high-power electronics technology with high efficiency and ultra-high-power density. This Special Issue will provide a platform for the state of the art and the recent advancements in power electronics technologies and applications relating novel contributions from scientists, academics and researchers.

Dr. Vallivedu Janardhanam
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • high-power devices
  • reverse breakdown voltage
  • figure of merit
  • Schottky barrier diode
  • edge termination methods
  • energy-storage systems
  • power electronics

Published Papers (2 papers)

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Research

31 pages, 8013 KiB  
Article
Sensorless Field Oriented Control of Synchronous Machines for Low and High Speeds with Space Vector Modulation-Based Direct Flux Control Measurement Sequence
by Rodrigo Guzman Iturra and Peter Thiemann
Electronics 2023, 12(6), 1382; https://doi.org/10.3390/electronics12061382 - 14 Mar 2023
Viewed by 1609
Abstract
During the last decade, field oriented control has often been implemented with space vector modulation due to its inherent advantages over other modulation techniques. On the other hand, direct flux control is a method that estimates the rotor electrical position of synchronous machines [...] Read more.
During the last decade, field oriented control has often been implemented with space vector modulation due to its inherent advantages over other modulation techniques. On the other hand, direct flux control is a method that estimates the rotor electrical position of synchronous machines (e.g., permanent magnet synchronous motors) using only voltage measurements. In simple terms, direct flux control replaces position sensors by measuring the voltage difference between the star point of the synchronous machine and an artificial star point at particular instants during the switching pattern. Indeed, previous work dealt with direct flux control resorting exclusively to sinusoidal pulse width modulation and mostly in open-loop speed control schemes. This paper aims to present a space vector modulation-based direct flux control measurement sequence that can be used directly with field oriented control to perform sensorless speed control of synchronous machines. In contrast with previous publications, the direct flux control measurement sequence proposed in this paper not only extracts the direct flux control flux linkage signals with the same offset level but also obtains the phase currents needed for field oriented control without current ripple. In simple terms, the proposed direct flux control measurement sequence based on space vector modulation can be used with field oriented control to perform sensorless closed-loop speed control of synchronous machines. The sensorless speed control with the space vector modulation-based direct flux control sequence is validated for high speeds (80% of the nominal speed) and low speeds (6% of the nominal speed) using a high-fidelity four-pole synchronous machine’s simulation model implemented in ANSYS Simplorer and Maxwell. Full article
(This article belongs to the Special Issue State of the Art and Future Trends in Low and High Power Electronics)
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10 pages, 4350 KiB  
Communication
Correlation of Crystal Defects with Device Performance of AlGaN/GaN High-Electron-Mobility Transistors Fabricated on Silicon and Sapphire Substrates
by Sakhone Pharkphoumy, Vallivedu Janardhanam, Tae-Hoon Jang, Kyu-Hwan Shim and Chel-Jong Choi
Electronics 2023, 12(4), 1049; https://doi.org/10.3390/electronics12041049 - 20 Feb 2023
Cited by 3 | Viewed by 2155
Abstract
Herein, the performance of AlGaN/GaN high-electron-mobility transistor (HEMT) devices fabricated on Si and sapphire substrates is investigated. The drain current of the AlGaN/GaN HEMT fabricated on sapphire and Si substrates improved from 155 and 150 mA/mm to 290 and 232 mA/mm, respectively, at [...] Read more.
Herein, the performance of AlGaN/GaN high-electron-mobility transistor (HEMT) devices fabricated on Si and sapphire substrates is investigated. The drain current of the AlGaN/GaN HEMT fabricated on sapphire and Si substrates improved from 155 and 150 mA/mm to 290 and 232 mA/mm, respectively, at VGS = 0 V after SiO2 passivation. This could be owing to the improvement in the two-dimensional electron gas charge and reduction in electron injection into the surface traps. The SiO2 passivation resulted in the augmentation of breakdown voltage from 245 and 415 V to 400 and 425 V for the AlGaN/GaN HEMTs fabricated on Si and sapphire substrates, respectively, implying the effectiveness of SiO2 passivation. The lower transconductance of the AlGaN/GaN HEMT fabricated on the Si substrate can be ascribed to the higher self-heating effect in Si. The X-ray rocking curve measurements demonstrated that the AlGaN/GaN heterostructures grown on sapphire exhibited a full-width half maximum of 368 arcsec against 703 arcsec for the one grown on Si substrate, implying a better crystalline quality of the AlGaN/GaN heterostructure grown on sapphire. The AlGaN/GaN HEMT fabricated on the sapphire substrate exhibited better performance characteristics than that on the Si substrate, owing to the high crystalline quality and improved surface. Full article
(This article belongs to the Special Issue State of the Art and Future Trends in Low and High Power Electronics)
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