Transparent Conducting and Semiconducting Oxides

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: closed (15 February 2021) | Viewed by 2486

Special Issue Editor


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Guest Editor
1. Humboldt University Berlin, Germany
2. Brandenburg University of Technology Cottbus-Senftenberg, Germany
Interests: electronic structure, Transparent conducting and semiconducting oxides, cuprates, transition metal dichalcogenides

Special Issue Information

Dear Colleagues,

Transparent conducting and semiconducting oxides (TCO’s and TSO’s) have emerged in the last ten years as materials with an outstanding and wide range of properties and possible new applications. For instance the ability to act as a semitransparent (80%) conductor with carrier densities like a semimetal and a breakdown voltage in power devices of Ga2O3 exceeding that of GaN. Their basic physics however is still under debate. Especially the doping mechanism and the search for the dominant donor are still ongoing. A related question is, why they occur preferentially as n-type materials with p-type doping being hard to achieve.

Progress in the growth of large single crystals and the growth of high quality thin films by different methods have initiated a billion Dollar market. Furthermore a wealth of studies on potential further applications like UV blind photodetectors and n-n type heterojunctions for transparent electronics demonstrate the high potential and further prospects.

Researchers are invited to contribute to the Special Issue on transparent conducting oxides which is intended to serve as a unique multidisciplinary forum covering broad aspects of science, technology and the application of films and single crystals.
 The potential topics include, but are not limited to:
-    Synthesis and growth of TCO/TSO crystals
-    Growth of TCO/TSO films
-    TCO/TSO crystal and film morphology
-    Real structure and properties of TCO/TSO crystals and films
-    Characterisation of TCO/TSO crystals and films by spectroscopic, microscopic and other advanced techniques
-    Exploitation of the remarkable properties of TCO/TSO crystals and films in various existent and emerging applications

Dr. Christoph Janowitz
Guest Editor

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Keywords

  • TCO/TSO single crystals
  • TCO/TSO thin films
  • Electronic structure
  • Doping mechanism
  • CVD, ALD and MBE
  • TCO/TSO properties
  • TCO/TSO characterization
  • TCO/TSO applications

Published Papers (1 paper)

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Research

13 pages, 3338 KiB  
Article
Effects of Different Amounts of Nb Doping on Electrical, Optical and Structural Properties in Sputtered TiO2−x Films
by Daniel Dorow-Gerspach, Dieter Mergel and Matthias Wuttig
Crystals 2021, 11(3), 301; https://doi.org/10.3390/cryst11030301 - 17 Mar 2021
Cited by 7 | Viewed by 2010
Abstract
Highly conductive TiO2 films with different Nb doping levels (up to 5 at%) were prepared by reactive DC magnetron sputtering under precise control of the oxygen partial pressure. They were deposited on unheated substrates, covered with a protective Si3N4 [...] Read more.
Highly conductive TiO2 films with different Nb doping levels (up to 5 at%) were prepared by reactive DC magnetron sputtering under precise control of the oxygen partial pressure. They were deposited on unheated substrates, covered with a protective Si3N4 layer, and subsequently annealed at 300 °C. The doping efficiency of Nb is greater than 90%. Conductivity is a maximum for a partly oxidized target in the transition range. The best films exhibit a resistivity of 630 µΩ cm and a mobility of 7.6 cm2/Vs combined with a high transparency above 70%. Comparing the behavior of undoped and Nb-containing films, intrinsic limits of the conductivity in the TiO2−x:Nb system could be observed, and a consistent model explaining these findings is presented. The conductivity is limited—by decreasing electron density due to Nb oxidation—by increasing incorporation formation of Nb2O5 clusters as scattering centers with increasing oxygen partial pressure and Nb concentration, by a transition from the crystalline to the amorphous state of the films below a critical oxygen partial pressure. Full article
(This article belongs to the Special Issue Transparent Conducting and Semiconducting Oxides)
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