Plasma Processing and Thin Film Deposition

A special issue of Coatings (ISSN 2079-6412). This special issue belongs to the section "Plasma Coatings, Surfaces & Interfaces".

Deadline for manuscript submissions: closed (20 August 2022) | Viewed by 8600

Special Issue Editor


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Guest Editor
Department of Physics, Chemistry and Biology (IFM), Linköping University, Linkoping, Sweden
Interests: plasma; deposition; thin film; coatings

Special Issue Information

Dear Colleagues,

We would like to invite you to submit your research work to our Special Issue on “Plasma Processing and Thin Films Deposition.”

Nowadays, thin film deposition is a well-established industry, where physical vapor deposition, based on releasing by plasma a material from a source and depositing of it on a substrate, plays one of the dominant roles. Though, due to a wide range of used and suggested to use in the process materials, that technology is still in intensive development. Each new material allowing further evolution of functionality of the deposited coatings requires a separate and detail study and/or analysis of both releasing and deposition sides of the process. 

This Special Issue entitled “Plasma Processing and Thin Films Deposition” calls for papers that can further improve the understanding of features of the deposition of coatings and problems of their accurate characterization. Original research papers and reviews on plasma generation, its characterization and diagnostics of resulted coatings done with various techniques and for various applications will be considered. The focus of this Special Issue will be on approaches of such widely used methods of the deposition as the magnetron sputtering (DC and HiPIMS) and vacuum arcing, though works which are reporting other methods and techniques allowing the creation and further evolution of thin layers will also be welcome.

In particular, the topics of interest of this Special Issue include, but are not limited to, the following:

  • Methods of improvement, deposition, and characterization of coatings;
  • Optimization and tuning possibilities of a successful deposition process with aim to achieve required/varied structure and composition of coatings;
  • Consideration and comparison of different characterization techniques to obtain accurate interpretation of structure and/or composition of coatings.

Dr. Igor Zhirkov
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Coatings is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • sputtering
  • HiPIMS
  • vacuum arc
  • physical vapor deposition
  • thin film deposition
  • coatings

Published Papers (4 papers)

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Research

21 pages, 5464 KiB  
Article
Downstream Electric Field Effects during Film Deposition with a Radio Frequency Plasma and Observations of Carbon Reduction
by Kenneth Scott Alexander Butcher, Vasil Georgiev, Dimka Georgieva, Rositsa Gergova, Penka Terziyska and Peter W. Binsted
Coatings 2022, 12(10), 1581; https://doi.org/10.3390/coatings12101581 - 19 Oct 2022
Cited by 3 | Viewed by 1701
Abstract
Strong electric fields are generated by radio frequency (RF) plasma sources, and though the RF portion is too high a frequency for ions to react, the direct current (DC) portion of these fields has been shown to cause the atomic migration of metals, [...] Read more.
Strong electric fields are generated by radio frequency (RF) plasma sources, and though the RF portion is too high a frequency for ions to react, the direct current (DC) portion of these fields has been shown to cause the atomic migration of metals, which can influence film morphology even downstream of the plasma where ionized plasma species are absent. In particular, we have observed the growth of nanopillars due to metal atoms migrating toward the positive field of the remote plasma. A biased grid placed between the plasma and the substrate can shield the substrate from these fields so that, when grounded, smooth films can be grown to a root mean square roughness of less than 1 nm. Positively biasing the grid returns the growth of nanocolumns. Interestingly, negatively biasing the grid significantly reduced the carbon and hydrocarbon content of gallium nitride films grown at a low temperature (~660 °C) using a nitrogen plasma, as observed using secondary ion mass spectroscopy (SIMS) and optical absorption measurements. The films also showed a notable improvement in conductivity and visible appearance. Full article
(This article belongs to the Special Issue Plasma Processing and Thin Film Deposition)
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10 pages, 3607 KiB  
Article
Comparison of Self-Assembled Monolayers on SiO2 and Porous SiOCH Dielectrics by Decyltrimethoxysilane Vapor Treatment
by Yi-Lung Cheng, Wei-Fan Peng, Chih-Yen Lee, Giin-Shan Chen and Jau-Shiung Fang
Coatings 2022, 12(7), 926; https://doi.org/10.3390/coatings12070926 - 30 Jun 2022
Cited by 1 | Viewed by 1154
Abstract
Self-assembled monolayers (SAMs) are emerging as materials that are candidates of barriers used in back-end-of–line interconnects of integrated circuits for future generations. In this study, SAMs were formed on the SiO2 and porous SiOCH (p-SiOCH) films by using decyltrimethoxysilane (DTMOS) precursor in [...] Read more.
Self-assembled monolayers (SAMs) are emerging as materials that are candidates of barriers used in back-end-of–line interconnects of integrated circuits for future generations. In this study, SAMs were formed on the SiO2 and porous SiOCH (p-SiOCH) films by using decyltrimethoxysilane (DTMOS) precursor in vapor phase at a temperature of 100 °C. The effects of the formation of SAMs at the surfaces of SiO2 and p-SiOCH films on the electrical characteristics were characterized and compared. With O2 plasma irradiation, SAMs could successfully form on both SiO2 and p-SiOCH films, thereby enhancing the adhesion and dielectric breakdown field. In the p-SiOCH films, SAMs sealed the surface pores and had higher coverage, promoting the effectiveness of the Cu barrier. In the Cu/porous low-k integrated interconnects for advanced technological nodes, therefore, SAMs are promising emerging materials acting as a barrier and adhesive. On the other hand, for SiO2 films, SAMs weakened the barrier; however, they can act as an interfacial adhesion enhancer. Full article
(This article belongs to the Special Issue Plasma Processing and Thin Film Deposition)
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7 pages, 2742 KiB  
Article
Effect of Al Addition on the Oxidation Resistance of HfC Thin Films
by Aleksander Gaydaychuk, Stepan Linnik, Aleksander Mitulinsky and Sergei Zenkin
Coatings 2022, 12(1), 27; https://doi.org/10.3390/coatings12010027 - 27 Dec 2021
Cited by 1 | Viewed by 1929
Abstract
In this paper, we focus on the research of Al addition on Hf–Al–C film structure and oxidation resistance. It was found that obtained Hf–A–C films consist of a solid solution of Al in non-stoichiometric cubic HfC and have identical XRD patterns to bcc–HfC. [...] Read more.
In this paper, we focus on the research of Al addition on Hf–Al–C film structure and oxidation resistance. It was found that obtained Hf–A–C films consist of a solid solution of Al in non-stoichiometric cubic HfC and have identical XRD patterns to bcc–HfC. Besides, the Al addition decreases the sample mass gain during oxidation in air at temperatures up to 800 °C. Mass gain for Hf–Al–C was 44.3 and 22.5% less, compared to pristine HfC, at 600 and 800 °C, respectively. Full article
(This article belongs to the Special Issue Plasma Processing and Thin Film Deposition)
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8 pages, 2878 KiB  
Article
Electron-Beam Deposition of Aluminum Nitride and Oxide Ceramic Coatings for Microelectronic Devices
by Yury G. Yushkov, Efim M. Oks, Andrey V. Tyunkov, Alexey Yu Yushenko and Denis B. Zolotukhin
Coatings 2021, 11(6), 645; https://doi.org/10.3390/coatings11060645 - 27 May 2021
Cited by 8 | Viewed by 2600
Abstract
This work presents the results of the coating deposition by electron-beam evaporation of aluminum nitride and aluminum oxide targets in nitrogen and oxygen atmospheres in the forevacuum range (5–30 Pa). The method we employed is a combination of the electron-beam and plasma methods, [...] Read more.
This work presents the results of the coating deposition by electron-beam evaporation of aluminum nitride and aluminum oxide targets in nitrogen and oxygen atmospheres in the forevacuum range (5–30 Pa). The method we employed is a combination of the electron-beam and plasma methods, since in the mentioned pressure range, the electron beam creates plasma that essentially changes the interaction picture of both the electron beam with the ceramic target and the flux of evaporated material with a substrate. We show a possibility of depositing such coatings on monolithic microwave integrated circuits passivated by Si3N4 dielectric. Full article
(This article belongs to the Special Issue Plasma Processing and Thin Film Deposition)
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