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Thin Films of Electronic Materials
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Thin Films of Electronic Materials

A special issue of Coatings (ISSN 2079-6412). This special issue belongs to the section "Thin Films".

Deadline for manuscript submissions: closed (30 November 2022) | Viewed by 9214

Special Issue Editors

Dr. Manish Kumar

E-Mail Website1 Website2
Guest Editor
Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
Interests: thin films; magnetism; semiconductors; transparent–oxides; opto-electronic materials; X-ray diffraction; X-ray spectroscopy
Special Issues, Collections and Topics in MDPI journals
Dr. Sunita Rani

E-Mail Website
Guest Editor
Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 37673, Korea
Interests: thin films; optical properties; chalcogenide materials; X-ray diffraction; X-ray spectroscopy

Special Issue Information

Dear Colleagues,

It is my pleasure and honor to invite you to submit your contribution to this Special Issue of Coatings entitled “Thin Films of Electronic Materials”.

Electronic materials are extensively used in electrical, electronics, and microelectronics devices. These include semiconducting materials, magnetic materials, superconducting materials, ferroelectric materials, optoelectronic materials, and many more. Devices using these electronic materials rely on their intrinsic properties, such as electrical conductivity, dielectric behavior, magnetism and photo-response, etc. Thin film growth of electron materials with the desired functionalities is vital to meeting the increasing demand for smart devices in modern-day society. 

This Special Issue aims to present the latest experimental and theoretical developments in the field of thin films of electronic materials.

In particular, the topics of interest include but are not limited to:

  • Semi-conducting thin films;
  • Thin films of opto-electronic materials;
  • Conducting transparent oxide thin films;
  • Magnetic thin films;
  • Superconducting thin films;
  • Dielectric thin films;
  • Characterization of thin films of electronic materials.

Dr. Manish Kumar
Dr. Sunita Rani
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Coatings is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • thin films
  • electronic materials
  • electronic applications

Published Papers (5 papers)

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Research

8 pages, 3164 KiB  
Communication
Fabrication and Properties of Epitaxial VO2 Thin Film on m-Al2O3 Substrate
by Manish Kumar, Sunita Rani and Hyun Hwi Lee
Coatings 2023, 13(2), 439; https://doi.org/10.3390/coatings13020439 - 15 Feb 2023
Viewed by 1447
Abstract
A thin film of thermochromic VO2 was prepared on m-Al2O3 substrate using a radio frequency (RF) magnetron sputtering technique. The epitaxial growth of the monoclinic M1 phase of VO2 on the m-Al2O3 substrate was [...] Read more.
A thin film of thermochromic VO2 was prepared on m-Al2O3 substrate using a radio frequency (RF) magnetron sputtering technique. The epitaxial growth of the monoclinic M1 phase of VO2 on the m-Al2O3 substrate was confirmed through synchrotron X-ray diffraction (XRD) measurements. The transformation of this monoclinic M1 phase into a rutile phase at ~68 °C was reflected in the temperature-dependent XRD measurements of the VO2 thin film. The temperature-dependent electrical resistance measurements of this sample also revealed an abrupt metal-to-insulator transition at ~68 °C, which is reversible in nature. Temperature-dependent X-ray absorption (XAS) measurements at V L-edge and O K-edge were performed to study the electronic structure of the epitaxial VO2/m-Al2O3 thin film during the metal-to-insulator (MIT) transition. Full article
(This article belongs to the Special Issue Thin Films of Electronic Materials)
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13 pages, 1484 KiB  
Article
Deposition and Characterization of Heterostructures Based on Doped Ferrocene for Film-Device Applications
by María Elena Sánchez Vergara, Emiliano Toledo Dircio and Rafael Imanol Zubillaga Serrano
Coatings 2022, 12(12), 1859; https://doi.org/10.3390/coatings12121859 - 30 Nov 2022
Viewed by 1880
Abstract
Novel heterostructures based on ferrocenium hexafluorophosphate (FcPF6), 2,6-dihydroxyanthraquinone (DHAQ) or 2,6-diaminoanthraquinone (DAAQ), zinc phthalocyanine (ZnPc) and nylon 11 were deposited by the high-vacuum thermal evaporation (HVTE) technique. Morphological and mechanical characterizations of these organic heterostructures FcPF6:DHAQ/nylon(ZnPc) and FcPF6 [...] Read more.
Novel heterostructures based on ferrocenium hexafluorophosphate (FcPF6), 2,6-dihydroxyanthraquinone (DHAQ) or 2,6-diaminoanthraquinone (DAAQ), zinc phthalocyanine (ZnPc) and nylon 11 were deposited by the high-vacuum thermal evaporation (HVTE) technique. Morphological and mechanical characterizations of these organic heterostructures FcPF6:DHAQ/nylon(ZnPc) and FcPF6:DAAQ/nylon(ZnPc) were carried out. Subsequently, corresponding optical parameters were calculated. The heterostructure with FcPF6:DHAQ presented the lowest optical band gap and fundamental band gap at 1.55 eV and 2.45 eV, respectively. The nylon(ZnPc) layer favors the optical behavior and places these heterostructures within organic low-bandgap semiconductor range. Additionally, devices were fabricated, and their electrical behavior was evaluated. The ITO/FcPF6:DHAQ/nylon(ZnPc)/Ag device exhibits ohmic behavior, and the ITO/FcPF6:DAAQ/nylon(ZnPc)/Ag device exhibits ohmic behavior at low voltages, but at V ≥ 5 V, its behavior changes to Space Charge Limited Current (SCLC). This device carries a maximum current of 0.02 A, three orders of magnitude higher than the current carried by the device with the DHAQ. The SCLC conduction mechanism showed a hole mobility of 9.27 × 10−8 (cm2)/Vs, the concentration of thermally excited holes of 3.01 × 1023 m−3, and trap concentration of 3.93 × 1021 m−3. FcPF6:DHAQ/nylon(ZnPc) and FcPF6:DAAQ/nylon(ZnPc) are potential candidates for organic devices as an emitter layer and active layer, respectively. Full article
(This article belongs to the Special Issue Thin Films of Electronic Materials)
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7 pages, 2132 KiB  
Communication
Phase Transition and Optical Properties of VO2 and Al: ZnO/VO2 Thin Films
by Chirag Saharan, Pawan S. Rana and Manish Kumar
Coatings 2022, 12(11), 1737; https://doi.org/10.3390/coatings12111737 - 13 Nov 2022
Cited by 2 | Viewed by 1463
Abstract
Thermochromic Vanadium dioxide (VO2) has strong potential for smart window applications but its commercial scale usage is limited due to low visible light transmission. To address this issue, aluminum doped zinc oxide (AZO) anti-reflecting layer is integrated with VO2 layer [...] Read more.
Thermochromic Vanadium dioxide (VO2) has strong potential for smart window applications but its commercial scale usage is limited due to low visible light transmission. To address this issue, aluminum doped zinc oxide (AZO) anti-reflecting layer is integrated with VO2 layer in the present work. VO2 single layer and AZO/VO2 bilayer thin film samples were deposited by sputtering technique on quartz substrate. The single-phase growth of VO2 and AZO in single layer and bilayer thin film samples is confirmed by X-ray diffraction measurements. Monoclinic M1 phase of VO2 is detected in VO2 and AZO/VO2 thin film samples at room temperature. Monoclinic to rutile structural phase transition (SPT) in these samples is studied by performing temperature-dependent X-ray diffraction measurements. SPT in VO2 thin film samples is close to 68 °C and SPT temperature appears slightly lower in AZO/VO2 sample as compared to VO2 sample. Spectral transmittance measurement at room temperature showed significant improvement in the visible transmittance of AZO bilayer film than that of single layer VO2 thin film. These results demonstrate the possibility of integration of anti-reflecting layers such as AZO with VO2 layer for better visible transmittances suitable for large-scale smart window applications. Full article
(This article belongs to the Special Issue Thin Films of Electronic Materials)
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13 pages, 3140 KiB  
Article
Proximity-Induced Magnetism in a Topological Insulator/Half-Metallic Ferromagnetic Thin Film Heterostructure
by Min Zhang, Qiya Liu, Ligang Liu and Tixian Zeng
Coatings 2022, 12(6), 750; https://doi.org/10.3390/coatings12060750 - 31 May 2022
Cited by 1 | Viewed by 1586
Abstract
Topological insulator (TI) Bi2Se3 thin films were prepared on half-metallic ferromagnetic La0.7Sr0.3MnO3 thin film by magnetron sputtering, forming a TI/FM heterostructure. The conductivity of Bi2Se3was modified by La0.7Sr0.3 [...] Read more.
Topological insulator (TI) Bi2Se3 thin films were prepared on half-metallic ferromagnetic La0.7Sr0.3MnO3 thin film by magnetron sputtering, forming a TI/FM heterostructure. The conductivity of Bi2Se3was modified by La0.7Sr0.3MnO3 at high- and low-temperature regions via different mechanisms, which could be explained by the short-range interactions and long-range interaction between ferromagnetic insulator and Bi2Se3 due to the proximity effect. Magnetic and transport measurements prove that the ferromagnetic phase and extra magnetic moment are induced in Bi2Se3 films. The weak anti-localized (WAL) effect was suppressed in Bi2Se3 films, accounting for the magnetism of La0.7Sr0.3MnO3 layers. This work clarifies the special behavior in Bi2Se3/La0.7Sr0.3MnO3 heterojunctions, which provides an effective way to study the magnetic proximity effect of the ferromagnetic phase in topological insulators. Full article
(This article belongs to the Special Issue Thin Films of Electronic Materials)
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7 pages, 1631 KiB  
Communication
Electrical Properties in Ta2NiSe5 Film and van der Waals Heterojunction
by Masaya Fukai, Noriyuki Urakami and Yoshio Hashimoto
Coatings 2021, 11(12), 1485; https://doi.org/10.3390/coatings11121485 - 02 Dec 2021
Viewed by 1988
Abstract
Ternary Ta2NiSe5 is a novel electronic material having the property of an excitonic insulator at room temperature. The electrical properties of Ta2NiSe5 have not been elucidated in detail. We discuss the electronic properties in Ta2NiSe [...] Read more.
Ternary Ta2NiSe5 is a novel electronic material having the property of an excitonic insulator at room temperature. The electrical properties of Ta2NiSe5 have not been elucidated in detail. We discuss the electronic properties in Ta2NiSe5 films and the formation of heterojunctions. Hall effect measurements showed p-type conductivity. The activation energies estimated from the temperature dependence of the carrier concentration were seen to be 0.17 eV and 0.12 eV, at approximately 300 and 400 K, respectively. It was observed that carrier generation behavior changes at the critical temperature of the excitonic insulator state (328 K). The temperature dependence of the Hall mobility below the critical temperature nearly follows the bell-shaped curves for conventional semiconductor materials. A MoS2/Ta2NiSe5 van der Waals heterojunction was fabricated using the transfer method. Rectification characteristics, which depend on the gate bias voltage, were obtained. The barrier height at the MoS2/Ta2NiSe5 heterointerface and the on/off ratio could be modulated by applying a gate bias voltage, suggesting that the carrier transport was exhibited in band-to-band flow. Our demonstration suggests that the knowledge of Ta2NiSe5 increased as an electronic material, and diode performance was successfully achieved for the electronic device applications. Full article
(This article belongs to the Special Issue Thin Films of Electronic Materials)
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