Advances in Thin Film Transistors: Properties and Applications

A special issue of Coatings (ISSN 2079-6412).

Deadline for manuscript submissions: closed (31 December 2020) | Viewed by 39261

Special Issue Editor


E-Mail Website
Guest Editor
Institute of Microelectronics & Department of Electronic Engineering, Department of Photonics, National Cheng Kung University, Tainan City 70101, Taiwan
Interests: oxide thin-film transistors; advanced memory; biosensors; phototransistors; thin films; optical sensors; wide bandgap semiconductor; low-dimensional semiconductors; semiconductor devices; high-k dielectric materials
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

We would like to invite you to submit your work to this Special Issue on “Advances in Thin Film Transistors: Properties and Applications”. Recently, transparent oxide semiconductors (TOSs) have been the object of extensive research in various connected fields. Owing to their advantages of high mobility, good transparency, and ideal uniformity, TOSs are more suitable for the application of thin-film transistors (TFTs) than conventional Si TFTs. In addition, the features of a low-temperature process and their compatibility with flexible electronics enable TOSs to become the mainstream channel materials in next-generation flat panel displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light-emitting diodes (AMOLEDs). Both In2O3 (~3.7 eV) and Ga2O3 (~4.9 eV) with a wide energy band gap possess excellent transparency. By adjusting to each stoichiometry, Indium-based transparent conducting oxide materials have been widely used in flat panel displays and optoelectronic devices, among other applications. Thin-film transistors (TFTs) have been in extensive use as on/off switch and current driving devices for various applications, ever since the concept of TFTs was reported. The Special Issue of the journal Coatings, “Advances in Thin Film Transistors: Properties and Applications”, aims to cover recent advances in TFT technologies.

Dr. Sheng-Po Chang
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Coatings is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Thin-film transistors
  • Organic thin film transistor
  • Oxide semiconductor materials
  • Crystal growth of semiconductor materials and modeling
  • High-k dielectric
  • High dielectric constant materials
  • Device physics
  • Hetero integration
  • Reliability (positive/negative voltage bias, light illumination, temperature, etc.)
  • Oxide-based application (biosensors, photo sensors, gas sensors, pressure sensors, memory, etc.)

Published Papers (12 papers)

Order results
Result details
Select all
Export citation of selected articles as:

Research

9 pages, 38864 KiB  
Article
Polymer Coating Effects: Study of Material Properties and Architectural Application Characteristics of Aluminum Template
by Fei Shuo Hung
Coatings 2021, 11(2), 240; https://doi.org/10.3390/coatings11020240 - 17 Feb 2021
Cited by 3 | Viewed by 3112
Abstract
In construction process, the formwork must be in contact with concrete to help the concrete solidify and fix the shape. Coating the formwork with a polymer can prolong its service life by reducing the amount of concrete sticking to the mold. Herein, an [...] Read more.
In construction process, the formwork must be in contact with concrete to help the concrete solidify and fix the shape. Coating the formwork with a polymer can prolong its service life by reducing the amount of concrete sticking to the mold. Herein, an aluminum template substrate was coated with polyvinylidene difluoride (PVDF) or polyurethane (PU). Aluminum template material analysis was conducted, polymer film thickness was measured, and weather, moisture, pollution, salt spray, abrasion, impact, and acid and alkali resistance tests were conducted, as were tensile, bending, adhesion, hardness, and salt water resistance tests. Cement adhesion resistance was repeatedly tested. The experimental results indicated that the PVDF-coated template was superior. The novel PVDF Aluminum template exhibited high corrosion resistance and can be used in building materials, for example, in ceilings, partition walls, curtain walls, roof panels, and roof trusses. For reference, it can also be applied to ship structures and seaside and wind power generation projects. Full article
(This article belongs to the Special Issue Advances in Thin Film Transistors: Properties and Applications)
Show Figures

Figure 1

9 pages, 2164 KiB  
Article
Light Output, Thermal Properties, and Reliability of Using Glass Phosphors in WLED Packages
by Chin-Chuan Huang, Tsung-Han Weng, Chun-Liang Lin and Yan-Kuin Su
Coatings 2021, 11(2), 239; https://doi.org/10.3390/coatings11020239 - 17 Feb 2021
Cited by 7 | Viewed by 2189
Abstract
White-light-emitting diodes (WLED) based on yttrium aluminum garnet (YAG) phosphors sintered with glass (PiG) and with silicone (PiS) are compared in terms of their light properties, temperature properties and reliability.The complete YAG phosphor was doped with an encapsulant traditional WLED (PiS WLED), and [...] Read more.
White-light-emitting diodes (WLED) based on yttrium aluminum garnet (YAG) phosphors sintered with glass (PiG) and with silicone (PiS) are compared in terms of their light properties, temperature properties and reliability.The complete YAG phosphor was doped with an encapsulant traditional WLED (PiS WLED), and the WLED was covered with PiG (PiG WLED). PiG was made by sintering glass powder and YAG phosphor at the ratio of 87:13 (%), and the correlated color temperature (CCT) was 5564 K. The CCT of the PiG WLED with the YAG doping concentration of 8.5 wt.% approximated 5649 K. The initial light output of the PiG WLED was 6.4% lower than that of the PiS WLED. Under 1008 h and 350 mA aging, PiG WLED and PiS WLED’ light output, CCT and color rendering index variation rates were all within 1%. In the saturated vapor-pressure test, no sample exhibited red ink infiltration, light nor peeling between the encapsulant and the lead-frame. Compared with that of the PiS WLED, the junction temperature of the PiG WLED reduced from 88.4 °C to 81.3 °C. Thermal resistance dropped from 37.4 °C/W to 35.6 °C/W. The PiG WLED presented a better CIE (Commission Internationale de l’Eclairage) 1931 chromaticity coordinate (x,y) concentration and thermal properties than the PiS WLED. Full article
(This article belongs to the Special Issue Advances in Thin Film Transistors: Properties and Applications)
Show Figures

Figure 1

13 pages, 2748 KiB  
Article
Characteristics of MgIn2O4 Thin Film Transistors Enhanced by Introducing an MgO Buffer Layer
by Wei-De Chen, Sheng-Po Chang and Wei-Lun Huang
Coatings 2020, 10(12), 1261; https://doi.org/10.3390/coatings10121261 - 20 Dec 2020
Viewed by 2080
Abstract
In this work, an MgIn2O4 (MIO) thin film transistor (TFT) with a bottom gate structure was fabricated. The MIO channel layer was deposited by RF sputtering using a single MgIn2O4 target. The performance of MIO TFT was [...] Read more.
In this work, an MgIn2O4 (MIO) thin film transistor (TFT) with a bottom gate structure was fabricated. The MIO channel layer was deposited by RF sputtering using a single MgIn2O4 target. The performance of MIO TFT was highly related to oxygen vacancies. As-deposited MIO TFT showed a low field-effect mobility due to doping of Mg. An MgO buffer layer was introduced to enhance the mobility of MIO TFT due to improvement of the interface with the channel layer. In addition, oxygen vacancies in the MIO channel were suppressed because of oxygen diffusion from the buffer layer. MIO TFT with a 5 nm MgO buffer layer showed an on/off current ratio of 9.68 × 103, a field-effect mobility of 4.81 cm2/V∙s, which was increased more than an order of magnitude compared with the device without a buffer layer, a threshold voltage of 2.01 V, and a subthreshold swing of 0.76 V/decade, which was improved more than 20% compared with the as-deposited one. Full article
(This article belongs to the Special Issue Advances in Thin Film Transistors: Properties and Applications)
Show Figures

Figure 1

10 pages, 29062 KiB  
Article
Electrical Characteristics and Stability Improvement of Top-Gate In-Ga-Zn-O Thin-Film Transistors with Al2O3/TEOS Oxide Gate Dielectrics
by Yih-Shing Lee, Yu-Hsin Wang, Tsung-Cheng Tien, Tsung-Eong Hsieh and Chun-Hung Lai
Coatings 2020, 10(12), 1146; https://doi.org/10.3390/coatings10121146 - 24 Nov 2020
Cited by 4 | Viewed by 2660
Abstract
In this work, two stacked gate dielectrics of Al2O3/tetraethyl-orthosilicate (TEOS) oxide were deposited by using the equivalent capacitance with 100-nm thick TEOS oxide on the patterned InGaZnO layers to evaluate the electrical characteristics and stability improvement of amorphous indium [...] Read more.
In this work, two stacked gate dielectrics of Al2O3/tetraethyl-orthosilicate (TEOS) oxide were deposited by using the equivalent capacitance with 100-nm thick TEOS oxide on the patterned InGaZnO layers to evaluate the electrical characteristics and stability improvement of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) devices, including positive bias stress (PBS) and negative bias stress (NBS) tests. Three different kinds of gate dielectrics (Al2O3, TEOS, Al2O3/TEOS) were used to fabricate four types of devices, differing by the gate dielectric, as well as its thickness. As the Al2O3 thickness of Al2O3/TEOS oxide dielectric stacks increased, both the on-current and off-current decreased, and the transfer curves shifted to larger voltages. The lowest ∆Vth of 0.68 V and ∆S.S. of −0.03 V/decade from hysteresis characteristics indicate that the increase of interface traps and charge trapping between the IGZO channel and gate dielectrics is effectively inhibited by using two stacked dielectrics with 10-nm thick Al2O3 and 96-nm thick TEOS oxide. The lowest ∆Vth and ∆S.S. values of a-IGZO TFTs with 10-nm thick Al2O3 and 96-nm thick TEOS oxide gate dielectrics according to the PBS and NBS tests were shown to have the best electrical stability in comparison to those with the Al2O3 or TEOS oxide single-layer dielectrics. Full article
(This article belongs to the Special Issue Advances in Thin Film Transistors: Properties and Applications)
Show Figures

Figure 1

10 pages, 4392 KiB  
Article
New Low-Voltage Driving Compensating Pixel Circuit Based on High-Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistors for High-Resolution Portable Active-Matrix OLED Displays
by Ching-Lin Fan, Hou-Yen Tsao, Chun-Yuan Chen, Pei-Chieh Chou and Wei-Yu Lin
Coatings 2020, 10(10), 1004; https://doi.org/10.3390/coatings10101004 - 20 Oct 2020
Cited by 11 | Viewed by 3685
Abstract
In recent years, active-matrix organic light-emitting diodes (AMOLEDs) has been the most popular display for portable application. To satisfy the requirement for the application of the portable display, the design of the compensating pixel circuit with the low-voltage driving and low-power consumption will [...] Read more.
In recent years, active-matrix organic light-emitting diodes (AMOLEDs) has been the most popular display for portable application. To satisfy the requirement for the application of the portable display, the design of the compensating pixel circuit with the low-voltage driving and low-power consumption will be requested. In addition to the circuit with the design of the low-voltage driving, high-mobility thin-film transistors as driving device will be also necessary in order to supply larger driving current at low-voltage driving. Therefore, the study presents a new low-voltage driving AMOLED pixel circuit with high-mobility amorphous indium–zinc–tin–oxide (a-IZTO) thin-film transistors (TFTs) as driving device for portable displays with high resolution. The proposed pixel circuit can simultaneously compensate for the threshold voltage variation of driving TFT (ΔVTH_TFT), OLED degradation (ΔVTH_OLED), and the I-R drop of a power line (ΔVDD). By using AIM-Spice for simulation based on fabricated a-IZTO TFTs with mobility of 70 cm2V−1S−1 as driving devices, we discovered that the error rates of the driving current were all lower than 5.71% for all input data when ΔVTH_TFT = ±1 V, ΔVDD = 0.5 V, and ΔVTH_OLED = 0.5 V were all considered simultaneously. We revealed that the proposed 5T2C pixel circuit containing a high-mobility a-IZTO TFT as a driving device was suitable for high-resolution portable displays. Full article
(This article belongs to the Special Issue Advances in Thin Film Transistors: Properties and Applications)
Show Figures

Figure 1

10 pages, 2671 KiB  
Article
Voltage-Tunable UVC–UVB Dual-Band Metal–Semiconductor–Metal Photodetector Based on Ga2O3/MgZnO Heterostructure by RF Sputtering
by Jie-Si Jheng, Chun-Kai Wang, Yu-Zung Chiou, Sheng-Po Chang and Shoou-Jinn Chang
Coatings 2020, 10(10), 994; https://doi.org/10.3390/coatings10100994 - 17 Oct 2020
Cited by 7 | Viewed by 2544
Abstract
Dual-band metal–semiconductor–metal (MSM) photodetectors (PDs) with a Ga2O3/MgZnO heterostructure were fabricated by radio frequency (RF) sputtering, which can detect ultraviolet C (UVC) and ultraviolet B (UVB) bands individually by controlling different bias voltages. A PD with the annealing temperature [...] Read more.
Dual-band metal–semiconductor–metal (MSM) photodetectors (PDs) with a Ga2O3/MgZnO heterostructure were fabricated by radio frequency (RF) sputtering, which can detect ultraviolet C (UVC) and ultraviolet B (UVB) bands individually by controlling different bias voltages. A PD with the annealing temperature of Ga2O3 at 600 °C can improve the crystal quality of Ga2O3 thin film and exhibit the least persistent photoconductivity (PPC) effect. However, a PD with the annealing temperature of Ga2O3 at 600 °C cannot achieve a voltage-tunable dual-band characteristic. On the contrary, the PD without annealing can suppress the carriers from the bottom layer of MgZnO thin film at a lower bias voltage of 1 V. At this time, the peak responsivity at 250 nm was mainly dominated by the top layer of Ga2O3 thin film. Then, as the bias voltage increased to 5 V, the peak detection wavelength shifted from 250 (UVC) to 320 nm (UVB). In addition, the PD with a 25 nm–thick SiO2 layer inserted between Ga2O3 and MgZnO thin film can achieve a broader operating bias voltage range for dual-band applications. Full article
(This article belongs to the Special Issue Advances in Thin Film Transistors: Properties and Applications)
Show Figures

Figure 1

11 pages, 5339 KiB  
Article
Au Doping ZnO Nanosheets Sensing Properties of Ethanol Gas Prepared on MEMS Device
by Yempati Nagarjuna and Yu-Jen Hsiao
Coatings 2020, 10(10), 945; https://doi.org/10.3390/coatings10100945 - 30 Sep 2020
Cited by 21 | Viewed by 3150
Abstract
Sensitivity of the Micro Electro Mechanical System (MEMS) device ZnO nanosheets sensor and the Au doped ZnO nanosheets sensor has been investigated. The ZnO samples have been prepared using Hydrothermal synthesis at 90 °C. The prepared ZnO nanostructure is tested for structural morphology [...] Read more.
Sensitivity of the Micro Electro Mechanical System (MEMS) device ZnO nanosheets sensor and the Au doped ZnO nanosheets sensor has been investigated. The ZnO samples have been prepared using Hydrothermal synthesis at 90 °C. The prepared ZnO nanostructure is tested for structural morphology and crystallinity properties. The elemental analysis of the ZnO sample and Au–ZnO samples are tested by using Energy Dispersive X-ray Spectroscopy (EDS) spectrum analysis. MEMS device microheater is designed and prepared for testing the sensitivity of Ethanol gas. Thermal properties of the MEMS microheater is studied for better gas testing at different temperatures. Both the ZnO nanosheets sensor and Au doped ZnO nanosheets sensor are tested using Ethanol gas, and the gas concentrations are taken to be 15, 30, 45, and 60 ppm at 300 °C. The gas sensing response of pure ZnO nanosheets tested for ethanol gas at 60 ppm showed 20%, while the Au–ZnO nanosheets showed 35%, which is increased by 15% at similar operating conditions. Full article
(This article belongs to the Special Issue Advances in Thin Film Transistors: Properties and Applications)
Show Figures

Figure 1

9 pages, 2657 KiB  
Article
Investigation of Conductive Mechanism of Amorphous IGO Resistive Random-Access Memory with Different Top Electrode Metal
by Wei-Lun Huang, Yong-Zhe Lin, Sheng-Po Chang and Shoou-Jinn Chang
Coatings 2020, 10(5), 504; https://doi.org/10.3390/coatings10050504 - 24 May 2020
Cited by 4 | Viewed by 3208
Abstract
In this paper, resistive random-access memory (RRAM) with InGaO (IGO) as an active layer was fabricated by radio-frequency (RF) sputtering system and the resistive switching mechanism with the different top electrode (TE) of Pt, Ti, and Al were investigated. The Pt/IGO/Pt/Ti RRAM exhibits [...] Read more.
In this paper, resistive random-access memory (RRAM) with InGaO (IGO) as an active layer was fabricated by radio-frequency (RF) sputtering system and the resistive switching mechanism with the different top electrode (TE) of Pt, Ti, and Al were investigated. The Pt/IGO/Pt/Ti RRAM exhibits typical bipolar resistive switching features with an average set voltage of 1.73 V, average reset voltage of −0.60 V, average high resistance state (HRS) of 54,954.09 Ω, and the average low resistance state (LRS) of 64.97 Ω, respectively. Ti and Al were substituted for Pt as TE, and the conductive mechanism was different from TE of Pt. When Ti and Al were deposited onto the switching layer, both TE of Ti and Al will form oxidation of TiOx and AlOx because of their high activity to oxygen. The oxidation will have different effects on the forming of filaments, which may further affect the RRAM performance. The details of different mechanisms caused by different TE will be discussed. In brief, IGO is an excellent candidate for the RRAM device and with the aids of TiOx, the set voltage, and reset voltage, HRS and LRS become much more stable. Full article
(This article belongs to the Special Issue Advances in Thin Film Transistors: Properties and Applications)
Show Figures

Figure 1

9 pages, 2282 KiB  
Article
Improved Color Purity of Monolithic Full Color Micro-LEDs Using Distributed Bragg Reflector and Blue Light Absorption Material
by Shao-Yu Chu, Hung-Yu Wang, Ching-Ting Lee, Hsin-Ying Lee, Kai-Ling Laing, Wei-Hung Kuo, Yen-Hsiang Fang and Chien-Chung Lin
Coatings 2020, 10(5), 436; https://doi.org/10.3390/coatings10050436 - 29 Apr 2020
Cited by 19 | Viewed by 3525
Abstract
In this study, CdSe/ZnS core-shell quantum dots (QDs) with various dimensions were used as the color conversion materials. QDs with dimensions of 3 nm and 5 nm were excited by gallium nitride (GaN)-based blue micro-light-emitting diodes (micro-LEDs) with a size of 30 μm [...] Read more.
In this study, CdSe/ZnS core-shell quantum dots (QDs) with various dimensions were used as the color conversion materials. QDs with dimensions of 3 nm and 5 nm were excited by gallium nitride (GaN)-based blue micro-light-emitting diodes (micro-LEDs) with a size of 30 μm × 30 μm to respectively form the green and red lights. The hybrid Bragg reflector (HBR) with high reflectivity at the regions of the blue, green, and red lights was fabricated on the bottom side of the micro-LEDs to reflect the downward light. This could enhance the intensity of the green and red lights for the green and red QDs/micro-LEDs to 11% and 10%. The distributed Bragg reflector (DBR) was fabricated on the QDs color conversion layers to reflect the non-absorbed blue light that was not absorbed by the QDs, which could increase the probability of the QDs excited by the reflected blue light. The blue light absorption material was deposited on the DBR to absorb the blue light that escaped from the DBR, which could enhance the color purity of the resulting green and red QDs/micro-LEDs to 90.9% and 90.3%, respectively. Full article
(This article belongs to the Special Issue Advances in Thin Film Transistors: Properties and Applications)
Show Figures

Figure 1

8 pages, 3433 KiB  
Article
Ambient-Processed, Additive-Assisted CsPbBr3 Perovskite Light-Emitting Diodes with Colloidal NiOx Nanoparticles for Efficient Hole Transporting
by Chun-Yuan Huang, Sheng-Po Chang, Arjun G. Ansay, Zi-Hao Wang and Chih-Chiang Yang
Coatings 2020, 10(4), 336; https://doi.org/10.3390/coatings10040336 - 01 Apr 2020
Cited by 9 | Viewed by 3712
Abstract
In this study, the electrically driven perovskite light-emitting diodes (PeLEDs) were investigated by hybridizing the organic polyethylene oxide, 1,3,5-tris (N-phenylbenzimiazole-2-yl) benzene (TPBi), and bis(3,5-difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl) iridium III (FIrpic) with CsPbBr3 in the emission layer and adopting the colloidal NiOx nanoparticle (NP) hole [...] Read more.
In this study, the electrically driven perovskite light-emitting diodes (PeLEDs) were investigated by hybridizing the organic polyethylene oxide, 1,3,5-tris (N-phenylbenzimiazole-2-yl) benzene (TPBi), and bis(3,5-difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl) iridium III (FIrpic) with CsPbBr3 in the emission layer and adopting the colloidal NiOx nanoparticle (NP) hole transport layer. The synthesized NiOx NPs, having an average size of ~5 nm, can be spin-coated to become a smooth and close-packed film on the indium–tin–oxide anode. The NiOx NP layer possesses an overall transmittance of ~80% at 520 nm, which is about the peak position of electroluminescence (EL) spectra of CsPbBr3 emission layer. The coating procedures of NiOx NP and CsPbBr3 layers were carried out in ambient air. The novel PeLED turned on at 2.4 V and emitted bright EL of 4456 cd/m2 at 7 V, indicating the remarkable nonradiative-related defect elimination by organic additive addition and significant charge balance achieved by the NiOx NP layer. Full article
(This article belongs to the Special Issue Advances in Thin Film Transistors: Properties and Applications)
Show Figures

Figure 1

8 pages, 5760 KiB  
Article
Material Application of a Transformer Box: A Study on the Electromagnetic Shielding Characteristics of Al–Ta Coating Film with Plasma-Spray Process
by Fei-Shuo Hung
Coatings 2019, 9(8), 495; https://doi.org/10.3390/coatings9080495 - 06 Aug 2019
Cited by 8 | Viewed by 3062
Abstract
In this study we present the results of two experiments. In the first one, a Ta–Al–SS (stainless steel (SS)) multilayer coating structure was prepared using plasma spraying equipment to investigate the coating structure and interface properties. In the second one, Ta–Al on multilayer [...] Read more.
In this study we present the results of two experiments. In the first one, a Ta–Al–SS (stainless steel (SS)) multilayer coating structure was prepared using plasma spraying equipment to investigate the coating structure and interface properties. In the second one, Ta–Al on multilayer glass was prepared using the sputtering process to measure the thickness effect of thin film on electromagnetic wave shielding (EMI) characteristics and on the design of high-power switchboard covers. According to the experimental results, the multilayer structure of Ta–Al on SS improves the mechanical properties of a stainless steel plate by enhancing the explosion-proof property. An appropriate thickness of the plasma-sprayed pure aluminum layer can increase the adhesion to the stainless steel substrate and buffer the stress effect. After heat treatment (annealing), the Ta–Al–SS multilayer structural characteristics are excellent and suitable for shielding effects at different temperatures and humidity, which can be used as a reference for the engineering application of communication rooms and base power stations. According to EMI test of multi-coated glass (Ta–Al–glass), by increasing the thickness of Ta layer, we cannot effectively improve full-frequency EMI shielding with improved shielding at low-mid frequency condition. In addition, the Ta–Al interface formation of an Al–Ta–O compound layer can improve the adiabatic effect to reduce the thermal conductivity. Full article
(This article belongs to the Special Issue Advances in Thin Film Transistors: Properties and Applications)
Show Figures

Figure 1

7 pages, 2681 KiB  
Article
TiO2 Nano Flowers Based EGFET Sensor for pH Sensing
by Chih-Chiang Yang, Kuan-Yu Chen and Yan-Kuin Su
Coatings 2019, 9(4), 251; https://doi.org/10.3390/coatings9040251 - 15 Apr 2019
Cited by 31 | Viewed by 5302
Abstract
In this study, pH sensors were successfully fabricated on a fluorine-doped tin oxide substrate and grown via hydrothermal methods for 8 h for pH sensing characteristics. The morphology was obtained by high-resolution scanning electron microscopy and showed randomly oriented flower-like nanostructures. The TiO [...] Read more.
In this study, pH sensors were successfully fabricated on a fluorine-doped tin oxide substrate and grown via hydrothermal methods for 8 h for pH sensing characteristics. The morphology was obtained by high-resolution scanning electron microscopy and showed randomly oriented flower-like nanostructures. The TiO2 nanoflower pH sensors were measured over a pH range of 2–12. Results showed a high sensitivity of the TiO2 nano-flowers pH sensor, 2.7 (μA)1/2/pH, and a linear relationship between IDS and pH (regression of 0.9991). The relationship between voltage reference and pH displayed a sensitivity of a 46 mV/pH and a linear regression of 0.9989. The experimental result indicated that a flower-like TiO2 nanostructure extended gate field effect transistor (EGFET) pH sensor effectively detected the pH value. Full article
(This article belongs to the Special Issue Advances in Thin Film Transistors: Properties and Applications)
Show Figures

Figure 1

Back to TopTop