Advances in Thin Film Transistors: Properties and Applications, 2nd Edition
A special issue of Coatings (ISSN 2079-6412). This special issue belongs to the section "Surface Engineering for Energy Harvesting, Conversion, and Storage".
Deadline for manuscript submissions: closed (20 April 2024) | Viewed by 1243
Special Issue Editors
Interests: oxide thin-film transistors; advanced memory; biosensors; phototransistors; thin films; optical sensors; wide bandgap semiconductor; low-dimensional semiconductors; semiconductor devices; high-k dielectric materials
Special Issues, Collections and Topics in MDPI journals
Interests: thin films; metal materials; material analysis; photovoltaic ribbon; fine metal wires; secondary ion batteries
Special Issues, Collections and Topics in MDPI journals
Interests: thin-film phototransistors; resistive random access memory; biosensors; biomemory; optical sensors; wide bandgap semiconductor; semiconductor devices; organic light-emitting diode; led package
Interests: organic thin-film transistors; ferroelectric memory elements; resistive random access memory circuit component design; biomemory; synaptic memory element design; optical sensors; gas sensor
Special Issue Information
Dear Colleagues,
Following the successful first edition, we would like to invite you to submit your work to this Special Issue, “Advances in Thin Film Transistors: Properties and Applications Volume II”. Recently, transparent oxide semiconductors (TOSs) have been the object of extensive research in various connected fields. Owing to their advantages of high mobility, good transparency, and ideal uniformity, TOSs are more suitable for the application of thin-film transistors (TFTs) than conventional Si TFTs. In addition, the features of a low-temperature process and their compatibility with flexible electronics enable TOSs to become the mainstream channel materials in next-generation flat panel displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light-emitting diodes (AMOLEDs). Both In2O3 (~3.7 eV) and Ga2O3 (~4.9 eV) with wide energy band gaps possess excellent transparency. By adjusting to each stoichiometry, indium-based transparent conducting oxide materials have been widely used in flat panel displays and optoelectronic devices, among other applications. Thin-film transistors (TFTs) have been in extensive use as on/off switch and current driving devices for various applications, ever since the concept of TFTs was reported. This Special Issue of Coatings, “Advances in Thin Film Transistors: Properties and Applications Volume II”, aims to cover recent advances in TFT technologies.
Dr. Sheng-Po Chang
Dr. Kuan-Jen Chen
Dr. Chih-Chiang Yang
Dr. Ke-Jing Lee
Guest Editors
Manuscript Submission Information
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Coatings is an international peer-reviewed open access monthly journal published by MDPI.
Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
Keywords
- thin-film transistors
- organic thin-film transistors
- oxide semiconductor materials
- crystal growth of semiconductor materials and modeling
- high-k dielectric
- high-dielectric-constant materials
- device physics
- heterointegration
- reliability (positive/negative voltage bias, light illumination, temperature, etc.)
- oxide-based application (biosensors, photo sensors, gas sensors, pressure sensors, memory, etc.)
