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Advanced Semiconductor Materials and Films: Properties and Applications
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Advanced Semiconductor Materials and Films: Properties and Applications

A special issue of Coatings (ISSN 2079-6412). This special issue belongs to the section "Surface Engineering for Energy Harvesting, Conversion, and Storage".

Deadline for manuscript submissions: 31 August 2024 | Viewed by 8748

Special Issue Editors

Prof. Dr. Pengfei Guo

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Guest Editor
College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, China
Interests: semiconductor materials; nanostructures; bandgap modulation; photonics; optoelectronics
Prof. Dr. Shaoding Liu

E-Mail Website
Guest Editor
College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, China
Interests: metasurface; plasmonics; nonlinear nanophotonics
Prof. Dr. Chaoping Liu

E-Mail Website
Guest Editor
Department of Physics, College of Science, Shantou University, Shantou 515063, China
Interests: transparent conducting oxides; thin films; solar cells; power electronics

Special Issue Information

Dear Colleagues,

One-dimensional (1D) semiconductor nanostructures, 2D materials, and thin films are of particular interest with respect to their potential applications in highly integrated devices and systems. Especially, on-nanostructure bandgap modulation, thin film heterostructures, artificial optical systems (fabricated via CVD, MOCVD, MBE, and ALD), solution-based process, and  sputtering, etc., may provide material platforms for potential applications in photovoltaics, solid-state lighting, as well as highly integrated photonic and optoelectronic devices.

 This Special Issue covers several topics with regard to the preparation, optoelectronic, nanophotonic, characterization, and applications of semiconductor materials and their films in science and technologies. Authors are invited to submit original research articles, critical review articles, or short communications focused on, but not limited to, these topics:

  1. On-structure synthesis of 1D or 2D materials with radially or axially modulated compositions along a single structure;
  2. Innovative technical for the realize the bandgap engineering on a single nanowire or 2D materials;
  3. Recent advances in thin films and optoelectronic applications;
  4. Fabrication and physical properties of semiconductor materials;
  5. Semiconductor-metal interactions or light-mater interactions.

Prof. Dr. Pengfei Guo
Prof. Dr. Shaoding Liu
Prof. Dr. Chaoping Liu
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Coatings is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • semiconductor nanostructures
  • photodetectors
  • nanolasers
  • nonlinear nanophotonics
  • metasurface
  • thin films and heterostructures
  • optoelectronic devices

Published Papers (7 papers)

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Editorial

Jump to: Research, Review

3 pages, 179 KiB  
Editorial
Special Issue: Advanced Semiconductor Materials and Films: Properties and Applications
by Xia Shen, Qihang Lv and Pengfei Guo
Coatings 2022, 12(9), 1365; https://doi.org/10.3390/coatings12091365 - 19 Sep 2022
Cited by 1 | Viewed by 1163
Abstract
Advanced semiconductor materials and films are building blocks for multifunctional devices and circuits, integrated optoelectronic chips, and high-throughput communications, which have proved basic material platforms for nanoscience and technologies [...] Full article
(This article belongs to the Special Issue Advanced Semiconductor Materials and Films: Properties and Applications)

Research

Jump to: Editorial, Review

15 pages, 3392 KiB  
Article
The Construction of an α-F2O3/Tubular g-C3N4 Z-Scheme Heterojunction Catalyst for the Efficient Photocatalytic Degradation of Tetracycline
by Feng Xu, Kai Zhang, Kun Li, Hao Ju, Qian Xue, Xueqiang Qi and Jinxia Jiang
Coatings 2023, 13(11), 1909; https://doi.org/10.3390/coatings13111909 - 08 Nov 2023
Cited by 1 | Viewed by 832
Abstract
Morphological engineering and semiconductor coupling show significant potential to increase the photocatalytic performance of graphite carbon nitride (g-C3N4). In this work, a unique Z-scheme heterojunction photocatalyst composed of tubular g-C3N4 (TCN) and α-F2O3 [...] Read more.
Morphological engineering and semiconductor coupling show significant potential to increase the photocatalytic performance of graphite carbon nitride (g-C3N4). In this work, a unique Z-scheme heterojunction photocatalyst composed of tubular g-C3N4 (TCN) and α-F2O3 was successfully synthesized. Combining the experimental results and characterization, we extensively investigated the charge transfer mechanism of the α-F2O3/tubular g-C3N4 (FO-TCN) heterojunctions and processes in the photocatalytic degradation of tetracycline (TC). The tubular morphology provided a larger specific surface area, enhancing the light absorption area and thus improving the exposure of the active sites. Not only was the light absorption range expanded through the coupling with α-F2O3, but the charge transfer properties of the sample were also strengthened. The synergism between photocatalysis and the Fenton reaction enhanced the photocatalytic performance of the FO-TCN. Due to the previously mentioned beneficial factors, the performance of the FO-TCN photocatalyst was significantly increased; its reaction rate k value in the degradation of TC (0.0482 min−1) was 4.05 times faster than that of single g-C3N4 and it exhibited the best photocatalytic performance (95.02%) for the degradation of TC in 60 min, with an enhancement of 38.41%. Quenching experiments showed that h+ and ·O2− were the major active substances in the photocatalytic degradation process. Full article
(This article belongs to the Special Issue Advanced Semiconductor Materials and Films: Properties and Applications)
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12 pages, 7644 KiB  
Article
Effects of Nitrogen Doping on Pulling Rate Range of Defect-Free Crystal in CZ Silicon
by Chenguang Sun, Zhongshi Lou, Xingtian Ai, Zixuan Xue, Hui Zhang and Guifeng Chen
Coatings 2023, 13(9), 1637; https://doi.org/10.3390/coatings13091637 - 18 Sep 2023
Cited by 1 | Viewed by 1137
Abstract
We investigated the effect of nitrogen doping on the pulling rate range of defect-free crystal in silicon with a diameter of 200 mm. It was found that the pulling rate range of defect-free crystal in nitrogen-doped Czochralski silicon is wider and the pulling [...] Read more.
We investigated the effect of nitrogen doping on the pulling rate range of defect-free crystal in silicon with a diameter of 200 mm. It was found that the pulling rate range of defect-free crystal in nitrogen-doped Czochralski silicon is wider and the pulling rate (defect free) is lower than it is in non-nitrogen-doped Czochralski silicon. Under the experiment, the pull rate was from 0.67 mm/min~0.58 mm/min to 0.65 mm/min~0.54 mm/min. To further confirm the above experimental analysis, a numerical simulation process of nitrogen-doped Czochralski and non-nitrogen-doped Czochralski in an industrial system was performed. The V/G value along the S/L interface was the same for both models, but the distribution of Cvi (concentration of vacancy–concentration of self-interstitial) for nitrogen-doped Czochralski crystal silicon was more uniform and flat in a nitrogen-doped single crystal. Furthermore, the nitrogen-doped Czochralski crystal silicon had a smaller void size and a higher oxygen precipitation density. The experimental results are in good agreement with the numerical simulation results. Full article
(This article belongs to the Special Issue Advanced Semiconductor Materials and Films: Properties and Applications)
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15 pages, 4819 KiB  
Article
Investigation of Oxygen Behavior under Different Melt Flow, Diffusion Boundary Layer, and Crystal-Melt Interface in a 300 mm Silicon Crystal Growth with Cusp Magnetic Field
by Chenguang Sun, Xingtian Ai, Hui Zhang, Hungpang Chou, Huiyun Lyu and Guifeng Chen
Coatings 2023, 13(9), 1634; https://doi.org/10.3390/coatings13091634 - 18 Sep 2023
Viewed by 1327
Abstract
The silicon single crystals for semiconductor application are usually grown by the Czochralski (CZ) method. In this paper, we studied a 300 mm Czochralski silicon crystal grown with a cusp magnetic field to be used for an insulated gate bipolar transistor (IGBT). Different [...] Read more.
The silicon single crystals for semiconductor application are usually grown by the Czochralski (CZ) method. In this paper, we studied a 300 mm Czochralski silicon crystal grown with a cusp magnetic field to be used for an insulated gate bipolar transistor (IGBT). Different positions of the zero-Gauss plane (ZGP) under a cusp magnetic field were simulated and compared to numerical analysis. We investigated three factors that affected the oxygen concentration in the crystal, including (1) melt convection, (2) melt flow velocity near the quartz crucible wall, and (3) the diffusion boundary layer. We also studied the shape of the solid/liquid interface at the same time. The simulation results show that a change in the ZGP of the cusp magnetic field (CMF) strongly affects the convection in the melt, which leads to a difference in the thickness of the boundary layer near the wall of the quartz crucible. We investigated the relationship of the ZGP, convection in the melt, and the thickness of the boundary layer. In this way, we determined how to reduce oxygen diffusing into the melt and finally into the crystal. After simulation results were obtained, we pulled single crystals under the three configurations. The results show that the experimental data of the oxygen content and shape of the solid/liquid interfaces are consistent with the simulation results. Full article
(This article belongs to the Special Issue Advanced Semiconductor Materials and Films: Properties and Applications)
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13 pages, 7397 KiB  
Article
Simulation of the Inductor Structure to Improve FZ Thermal Fields
by Xingtian Ai, Chenguang Sun, Hui Zhang, Jian Sun, Luxiao Xie, Guodong Liu and Guifeng Chen
Coatings 2023, 13(9), 1565; https://doi.org/10.3390/coatings13091565 - 07 Sep 2023
Viewed by 960
Abstract
The floating zone (FZ) is one of the important methods for pulling silicon single crystals, but there are still problems of an unstable thermal field and crystallization difficulties. They will directly affect the growth of single crystals, resulting in defects and even fractures, [...] Read more.
The floating zone (FZ) is one of the important methods for pulling silicon single crystals, but there are still problems of an unstable thermal field and crystallization difficulties. They will directly affect the growth of single crystals, resulting in defects and even fractures, seriously reducing production efficiency. Based on this, the effect of the modified inductor structure on the FZ thermal field is investigated in this paper. Using COMSOL 6.0 simulation software, 2D and 3D FZ models are established. The inductor steps under the 2D model and the inductor slits under the 3D model are compared to analyze the effects of steps and slits on the 8-inch FZ thermal field and melt flow. The distributions of temperature fields and melt flow in the melting zone under the action of the axial magnetic field are calculated by finite element analysis. The results show that the melt under the introduction of steps in the 2D model and the cross-slit structure in the 3D model is the most stable and favorable for crystal growth, which matches the actual production. Full article
(This article belongs to the Special Issue Advanced Semiconductor Materials and Films: Properties and Applications)
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12 pages, 2991 KiB  
Article
Controllable Low-Bias Rectifying Behaviors Induced by AA-P2 Dopants in Armchair Silicene Nanoribbons with Different Widths
by Caiping Cheng, Haibo Zhang, Haifeng Zhang and Hui Yao
Coatings 2023, 13(1), 106; https://doi.org/10.3390/coatings13010106 - 05 Jan 2023
Cited by 2 | Viewed by 1096
Abstract
The electronic transport properties and rectifying behaviors of armchair silicene nanoribbons (ASiNRs) were investigated by using first-principles density functional theory, in which the left lead was pristine ASiNR and the right lead was doped ASiNR where two phosphorus (P) atoms replaced a pair [...] Read more.
The electronic transport properties and rectifying behaviors of armchair silicene nanoribbons (ASiNRs) were investigated by using first-principles density functional theory, in which the left lead was pristine ASiNR and the right lead was doped ASiNR where two phosphorus (P) atoms replaced a pair of adjacent silicon atoms in the same sublattice A (AA-P2). Two types of AA-P2-doped models were considered for P dopant-substitute silicon atoms at the center or edges. The results showed that the rectification behavior of the system with a large rectifying ratio could be found, which could be modulated by changing the width of the silicene nanoribbons or the position of the AA-P2 dopant. Mechanisms were revealed to explain the rectifying behaviors and provide a theoretical basis for semiconductor rectifier devices. Full article
(This article belongs to the Special Issue Advanced Semiconductor Materials and Films: Properties and Applications)
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Review

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23 pages, 8467 KiB  
Review
Metal Halide Perovskites: Promising Materials for Light-Emitting Diodes
by Xuyang Li, Xia Shen, Qihang Lv, Pengfei Guo and Liantuan Xiao
Coatings 2024, 14(1), 83; https://doi.org/10.3390/coatings14010083 - 07 Jan 2024
Viewed by 1510
Abstract
Metal halide perovskites have shown excellent optoelectronic properties, including high photoluminescence quantum yield, tunable emission wavelengths, narrow full-width at half-maximums and a low-cost, solution-processed fabrication, which make it exhibit great potential as emission-layer materials of light-emitting diodes. With the joint efforts of researchers [...] Read more.
Metal halide perovskites have shown excellent optoelectronic properties, including high photoluminescence quantum yield, tunable emission wavelengths, narrow full-width at half-maximums and a low-cost, solution-processed fabrication, which make it exhibit great potential as emission-layer materials of light-emitting diodes. With the joint efforts of researchers from different disciplines, there has been a significant progress in the improvement in the external quantum efficiency (EQE) and stability of perovskite light-emitting diodes (PeLEDs) in recent years, especially in green PeLEDs with EQEs over 30%. However, their operational stability lags behind other commercial organic and chalcogenide quantum dot emitters, limiting their practical application. In this review, we first introduce the basic device structure of PeLEDs, as well as the factors influencing the EQE and stability of PeLEDs. Secondly, the development of lead-based and lead-free PeLEDs are summarized systematically. Thirdly, challenges of PeLEDs are discussed in detail, including low the EQE of blue PeLEDs, poor device stability and EQE roll-off. Finally, some suggestions and perspectives for future research directions for PeLEDs are proposed. Full article
(This article belongs to the Special Issue Advanced Semiconductor Materials and Films: Properties and Applications)
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