Complex Oxides: Freestanding, Interfaces, and Tunnel Junctions

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Materials Science and Engineering".

Deadline for manuscript submissions: closed (20 August 2022) | Viewed by 6298

Special Issue Editor


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Guest Editor
Grupo de Física de Materiales Complejos (GFMC), Universidad Complutense de Madrid (UCM), 28040 Madrid, Spain
Interests: complex oxides; oxide interfaces; memristors; oxide tunnel junctions; freestanding oxides; superconductivity; spintronics.

Special Issue Information

Dear Colleagues,

The fast increase of data/processing requirements is forcing the use of novel materials and/or computation architectures. One of the most attractive possibilities is the implementation of Complex Correlated Oxides (CCOs) into different technological devices because of their unique capabilities and exciting fundamental impact.

CCOs are materials that show macroscopic quantum phenomena because of the unscreened Coulomb repulsion of d electrons, which gives rise to a delicate entanglement between different degrees of freedom: strain, orbital, charge, and spin. These complex correlated interactions result in a plethora of ground states with ferroic orders and superconductivity as well as showing metal–insulator transitions in some cases. Furthermore, the possibility of bringing different CCOs into direct contact may induce emergent phenomena at the interfaces, where functional properties can be tuned through external stimuli (electric fields, light, etc.). These in operando capabilities, which in some cases also occur in bulk, are the responsibility of memristive states, among others, that are crucial for the development of neuromorphic/bioinspired architectures.

However, one of the most common crystallographic families of CCOs is the perovskite, which requires the use of proper substrates and/or buffer layers for its optimum structural and functional fabrication. This hinders the implantation of CCOs into governed silicon-based technology or flexible devices. In recent years, huge efforts have been employed to release these materials from their on-grown substrate and deterministically transfer them to different substrates with the possibility of forming oxide heterostructures with van der Waals assembly, and efforts have been employed toward their characterization as a function of uniaxial/biaxial strains and bending radius.

This Special Issue aims to present the most recent achievements in oxide tunnel junctions, including advances in oxide interfaces, with neuromorphic perspectives, as well as the advances of freestanding oxides. It will highlight the current and future potential of these materials and boost some of our fundamental interests and societal requirements.

Dr. Victor Rouco
Guest Editor

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Keywords

  • complex oxides
  • oxide interfaces
  • memristors
  • oxide tunnel junctions
  • freestanding oxides

Published Papers (3 papers)

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Research

16 pages, 3610 KiB  
Article
Metal Release Mechanism and Electrochemical Properties of Lix(Ni1/3Mn1/3Co1/3)O2
by Blake G. Hudson and Sara E. Mason
Appl. Sci. 2022, 12(8), 4065; https://doi.org/10.3390/app12084065 - 18 Apr 2022
Cited by 5 | Viewed by 1778
Abstract
Complex metal oxides (CMOs) are used broadly in applications including electroreactive forms found in lithium-ion battery technology. Computational chemistry can provide unique information about how the properties of CMO cathode materials change in response to changes in stoichiometry, for example, changes of the [...] Read more.
Complex metal oxides (CMOs) are used broadly in applications including electroreactive forms found in lithium-ion battery technology. Computational chemistry can provide unique information about how the properties of CMO cathode materials change in response to changes in stoichiometry, for example, changes of the lithium (Li) content during the charge–discharge cycle of the battery. However, this is difficult to measure experimentally due to the small cross-sectional area of the cations. Outside of operational conditions, the Li content can influence the transformations of the CMO when exposed to the environment. For example, metal release from CMOs in aqueous settings has been identified as a cross-cutting mechanism important to CMO degradation. Computational studies investigating metal release from CMOs show that the thermodynamics depend on the oxidation states of lattice cations, which is expected to vary with the lithium content. In this work, computational studies track changes in metal release trends as a function of Li content in Lix(Ni1/3Mn1/3Co1/3)O2 (NMC). The resulting dataset is used to construct a random forest tree (RFT) machine learning (ML) model. A modeling challenge in delithiation studies is the large configurational space to sample. Through investigating multiple configurations at each lithium fraction, we find structural features associated with favorable energies to chemically guide the identification of relevant structures and adequately predict voltage values. Full article
(This article belongs to the Special Issue Complex Oxides: Freestanding, Interfaces, and Tunnel Junctions)
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11 pages, 861 KiB  
Article
On Thermodynamic Aspects of Oxide Crystal Growth
by Detlef Klimm and Nora Wolff
Appl. Sci. 2022, 12(6), 2774; https://doi.org/10.3390/app12062774 - 08 Mar 2022
Viewed by 1585
Abstract
Several metal oxide compounds, especially those containing metals possessing several valence states, are able to absorb or release oxygen under suitable thermodynamic conditions. Such behavior is found often in systems containing oxides of transition metals. It is important to note that the equilibrium [...] Read more.
Several metal oxide compounds, especially those containing metals possessing several valence states, are able to absorb or release oxygen under suitable thermodynamic conditions. Such behavior is found often in systems containing oxides of transition metals. It is important to note that the equilibrium oxidation level of those metal oxides can depend on the aggregation state, which may significantly impede crystal growth processes from the melt. If during the melt growth of such oxide crystals, the average valence state of the oxides is different in the molten and solid state, then crystallization is connected with the absorption of free oxygen from the ambient gas, or with the release of free oxygen into it. This phenomenon can be detected by simultaneous DTA/TG measurements and can deteriorate the stability of crystal growth. This holds especially if the average valence in the solid is smaller than in the melt, because oxygen release can lead to bubble formation at the crystallization front. Full article
(This article belongs to the Special Issue Complex Oxides: Freestanding, Interfaces, and Tunnel Junctions)
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16 pages, 1124 KiB  
Article
Strontium Ferromolybdate-Based Magnetic Tunnel Junctions
by Gunnar Suchaneck, Evgenii Artiukh, Nikolai A. Sobolev, Eugene Telesh, Nikolay Kalanda, Dmitry A. Kiselev, Tatiana S. Ilina and Gerald Gerlach
Appl. Sci. 2022, 12(5), 2717; https://doi.org/10.3390/app12052717 - 05 Mar 2022
Cited by 2 | Viewed by 1762
Abstract
Thin-film strontium ferromolybdate is a promising material for applications in room-temperature magnetic tunnel junction devices. These are spin-based, low-power-consuming alternatives to CMOS in non-volatile memories, comparators, analog-to-digital converters, and magnetic sensors. In this work, we consider the main tasks to be solved when [...] Read more.
Thin-film strontium ferromolybdate is a promising material for applications in room-temperature magnetic tunnel junction devices. These are spin-based, low-power-consuming alternatives to CMOS in non-volatile memories, comparators, analog-to-digital converters, and magnetic sensors. In this work, we consider the main tasks to be solved when creating such devices based on strontium ferromolybdate: (i) selecting an appropriate tunnel barrier material, (ii) determining the role of the interface roughness and its quantification, (iii) determining the influence of the interface dead layer, (iv) establishing appropriate models of the tunnel magnetoresistance, and (v) promoting the low-field magnetoresistance in (111)-oriented thin films. We demonstrate that (i) barrier materials with a lower effective electronegativity than strontium ferromolybdate are beneficial, (ii) diminution of the magnetic offset field (the latter caused by magnetic coupling) requires a wavy surface rather than solely a surface with small roughness, (iii) the interface dead-layer thickness is of the order of 10 nm, (iv) the tunnel magnetoresistance deteriorates due to spin-independent tunneling and magnetically disordered interface layers, and (v) antiphase boundaries along the growth direction promote the negative low-field magnetoresistance by reducing charge carrier scattering in the absence of the field. Full article
(This article belongs to the Special Issue Complex Oxides: Freestanding, Interfaces, and Tunnel Junctions)
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