Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
4.5
2.7
Journals
Applied Sciences
Special Issues
Chemical Mechanical Polishing and Grinding
applsci-logo
Submit to Applied Sciences Review for Applied Sciences Propose a Special Issue

Journal Menu

► Journal Menu

Journal Browser

► Journal Browser
share announcement

Chemical Mechanical Polishing and Grinding

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Mechanical Engineering".

Deadline for manuscript submissions: closed (15 July 2021) | Viewed by 28013

Special Issue Editor

Prof. Dr. Hyunseop Lee

E-Mail Website
Guest Editor
School of Mechanical Engineering, Tongmyong University, Nam-gu, Busan 48520, Korea
Interests: chemical mechanical polishing (CMP); tribology; grinding; lapping

Special Issue Information

Today, polishing and grinding technologies are applied in a variety of fields and add value to products. Beyond traditional processing methods, various types of polishing and grinding techniques have been developed and applied to industrial sites. Although polishing and grinding techniques have been commercialized for a long time, there is still the possibility of developing them academically and technically. We are inviting manuscripts for this Special Issue on “Chemical Mechanical Polishing (CMP) and Grinding”, which aims to cover the latest technologies in the field. Some of the specific topics for this Special Issue include:

  • Mechanism studies on material removal;
  • Advanced CMP, polishing, grinding, lapping technologies;
  • Application of CMP and grinding;
  • Modeling and simulation;
  • Studies on CMP and grinding consumables;
  • Process monitoring.

We look forward to your submissions to this Special Issue in any form, including review articles and regular research articles.

Prof. Dr. Hyunseop Lee
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Applied Sciences is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • chemical mechanical polishing (CMP)
  • planarization
  • surface finishing process
  • polishing
  • grinding
  • modeling and simulation

Published Papers (7 papers)

Download All Papers
Order results
Result details
Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:

Research

15 pages, 8581 KiB  
Article
Electrolytically Ionized Abrasive-Free CMP (EAF-CMP) for Copper
by Seonghyun Park and Hyunseop Lee
Appl. Sci. 2021, 11(16), 7232; https://doi.org/10.3390/app11167232 - 5 Aug 2021
Cited by 5 | Viewed by 3764
Abstract
Chemical–mechanical polishing (CMP) is a planarization process that utilizes chemical reactions and mechanical material removal using abrasive particles. With the increasing integration of semiconductor devices, the CMP process is gaining increasing importance in semiconductor manufacturing. Abrasive-free CMP (AF-CMP) uses chemical solutions that do [...] Read more.
Chemical–mechanical polishing (CMP) is a planarization process that utilizes chemical reactions and mechanical material removal using abrasive particles. With the increasing integration of semiconductor devices, the CMP process is gaining increasing importance in semiconductor manufacturing. Abrasive-free CMP (AF-CMP) uses chemical solutions that do not contain abrasive particles to reduce scratches and improve planarization capabilities. However, because AF-CMP does not use abrasive particles for mechanical material removal, the material removal rate (MRR) is lower than that of conventional CMP methods. In this study, we attempted to improve the material removal efficiency of AF-CMP using electrolytic ionization of a chemical solution (electrolytically ionized abrasive-free CMP; EAF-CMP). EAF-CMP had a higher MRR than AF-CMP, possibly due to the high chemical reactivity and mechanical material removal of the former. In EAF-CMP, the addition of hydrogen peroxide (H2O2) and citric acid increased the MRR, while the addition of benzotriazole (BTA) lowered this rate. The results highlight the need for studies on diverse chemical solutions and material removal mechanisms in the future. Full article
(This article belongs to the Special Issue Chemical Mechanical Polishing and Grinding)
►▼ Show Figures

Figure 1

9 pages, 2456 KiB  
Article
In Situ Metrology for Pad Surface Monitoring in CMP Using a Common-Path Phase-Shifting Interferometry: A Feasibility Study
by Eun-Soo Kim and Woo-June Choi
Appl. Sci. 2021, 11(15), 6839; https://doi.org/10.3390/app11156839 - 25 Jul 2021
Cited by 1 | Viewed by 2447
Abstract
In the fabrication of semiconductors, chemical mechanical polishing (CMP) is an essential wafer-planarization process. For optimal CMP, it is crucial to monitor the texture of the polishing pad; this leads to homogenous planarization of wafers. Hence, we present a new interferometric approach for [...] Read more.
In the fabrication of semiconductors, chemical mechanical polishing (CMP) is an essential wafer-planarization process. For optimal CMP, it is crucial to monitor the texture of the polishing pad; this leads to homogenous planarization of wafers. Hence, we present a new interferometric approach for in situ evaluation of the CMP pad surface based on a common-path phase-shifting interferometry, with which a series of phase-modulated interference signals immune to external perturbation can be recorded. A nanoscopic surface topology can then be reconstructed to estimate surface roughness using the recorded interference images. The surface mapping performance of the proposed method was tested by retrieving a topology of a vibrating nanostructure in immersion, of which height profiles were consistent with the result from atomic force microscopy (AFM). The method was also validated by examining the surface of a used CMP pad in simulated conditions. Full article
(This article belongs to the Special Issue Chemical Mechanical Polishing and Grinding)
►▼ Show Figures

Graphical abstract

12 pages, 8723 KiB  
Article
Kinematic Prediction and Experimental Demonstration of Conditioning Process for Controlling the Profile Shape of a Chemical Mechanical Polishing Pad
by Hanchul Cho, Taekyung Lee, Doyeon Kim and Hyoungjae Kim
Appl. Sci. 2021, 11(10), 4358; https://doi.org/10.3390/app11104358 - 11 May 2021
Cited by 4 | Viewed by 2674
Abstract
The uniformity of the wafer in a chemical mechanical polishing (CMP) process is vital to the ultra-fine and high integration of semiconductor structures. In particular, the uniformity of the polishing pad corresponding to the tool directly affects the polishing uniformity and wafer shape. [...] Read more.
The uniformity of the wafer in a chemical mechanical polishing (CMP) process is vital to the ultra-fine and high integration of semiconductor structures. In particular, the uniformity of the polishing pad corresponding to the tool directly affects the polishing uniformity and wafer shape. In this study, the profile shape of a CMP pad was predicted through a kinematic simulation based on the trajectory density of the diamond abrasives of the diamond conditioner disc. The kinematic prediction was found to be in good agreement with the experimentally measured pad profile shape. Based on this, the shape error of the pad could be maintained within 10 μm even after performing the pad conditioning process for more than 2 h, through the overhang of the conditioner. Full article
(This article belongs to the Special Issue Chemical Mechanical Polishing and Grinding)
►▼ Show Figures

Graphical abstract

16 pages, 5190 KiB  
Article
Material Removal Model for Lapping Process Based on Spiral Groove Density
by Taekyung Lee, Haedo Jeong, Sangjik Lee, Hanchul Cho, Doyeon Kim and Hyoungjae Kim
Appl. Sci. 2021, 11(9), 3950; https://doi.org/10.3390/app11093950 - 27 Apr 2021
Viewed by 2184
Abstract
The increasing demand for single-crystal wafers combined with the increase in diameter of semiconductor wafers has warranted further improvements in thickness variation and material removal rate during lapping to ensure price competitiveness of wafers; consequently, the lapping process has gained the attention of [...] Read more.
The increasing demand for single-crystal wafers combined with the increase in diameter of semiconductor wafers has warranted further improvements in thickness variation and material removal rate during lapping to ensure price competitiveness of wafers; consequently, the lapping process has gained the attention of researchers. However, there is insufficient research on the effect of platen grooves on the lapping process. In this study, the parameters to describe grooves were defined in order to understand their influence on the lapping process, and a material removal model was suggested based on indentation theory and subsequently experimentally validated. The results indicate that changes in groove density affect the lubrication condition at the contact interface as well as the probability of abrasive participation by varying the oil film thickness. When fabricating the groove for a lapping platen, a groove density at the critical groove density (CGD) or higher should be selected. The higher the groove density, the easier it is to avoid the CGD, and the higher is the material removal rate. The results of this study will enable engineers to design lapping platen grooves that are suitable for the production of modern semiconductor wafers. Full article
(This article belongs to the Special Issue Chemical Mechanical Polishing and Grinding)
►▼ Show Figures

Figure 1

15 pages, 7800 KiB  
Article
Contact-Area-Changeable CMP Conditioning for Enhancing Pad Lifetime
by Jungyu Son and Hyunseop Lee
Appl. Sci. 2021, 11(8), 3521; https://doi.org/10.3390/app11083521 - 14 Apr 2021
Cited by 9 | Viewed by 7680
Abstract
Chemical–mechanical polishing (CMP) is a process that planarizes semiconductor surfaces and is essential for the manufacture of highly integrated devices. In CMP, pad conditioning using a disk with diamond grit is adopted to maintain the surface roughness of the polishing pad and remove [...] Read more.
Chemical–mechanical polishing (CMP) is a process that planarizes semiconductor surfaces and is essential for the manufacture of highly integrated devices. In CMP, pad conditioning using a disk with diamond grit is adopted to maintain the surface roughness of the polishing pad and remove polishing debris. However, uneven pad wear by conditioning is unavoidable in CMP. In this study, we propose a contact-area-changeable conditioning system and utilize it to conduct a preliminary study for improving pad lifetime. Using the conventional conditioning method (Case I), the material removal rate (MRR) decreased rapidly after 12 h of conditioning and the within-wafer non-uniformity (WIWNU) increased. However, the results of conditioning experiments show that when using a contact-area-changeable conditioning system, uniform pad wear can be obtained in the wafer–pad contact area and the pad lifetime can be extended to more than 20 h. Finally, the newly proposed conditioning system in this study may improve the CMP pad lifetime. Full article
(This article belongs to the Special Issue Chemical Mechanical Polishing and Grinding)
►▼ Show Figures

Figure 1

16 pages, 6501 KiB  
Article
Hybrid CMP Slurry Supply System Using Ionization and Atomization
by Hoseong Jo, Da Sol Lee, Seon Ho Jeong, Hyun Seop Lee and Hae Do Jeong
Appl. Sci. 2021, 11(5), 2217; https://doi.org/10.3390/app11052217 - 3 Mar 2021
Cited by 5 | Viewed by 3981
Abstract
Chemical mechanical planarization (CMP) is frequently used in semiconductor manufacturing to polish the surfaces of multiple layers in a wafer. The CMP uses a slurry that aids in fabricating a smooth surface by removing the excess materials. However, excessive use of slurry affects [...] Read more.
Chemical mechanical planarization (CMP) is frequently used in semiconductor manufacturing to polish the surfaces of multiple layers in a wafer. The CMP uses a slurry that aids in fabricating a smooth surface by removing the excess materials. However, excessive use of slurry affects the environment and is expensive. Therefore, we propose a hybrid slurry supply system that combines ionization and atomization to reduce slurry consumption and improve the polishing quality. The proposed hybrid system atomizes the ionized slurry using electrolysis and a spray slurry nozzle. We compared the material removal rate (MRR) and polishing uniformity based on the slurry supply systems used in Cu and SiO2 non-patterned wafers. Additionally, the step height reduction and dishing were compared in the Cu-patterned wafers. The experimental analysis using the hybrid system confirmed a 23% and 25% improvement in the MRR and uniformity, respectively, in comparison with the conventional slurry supply system. This improvement can be attributed to the chemical activation and uniform supply of the ionized and atomized slurries, respectively. Moreover, a significant reduction was observed in dishing and pitch-size dependence. Furthermore, the proposed system prevents heat accumulation between the CMP processes, serving as a cooling system. Full article
(This article belongs to the Special Issue Chemical Mechanical Polishing and Grinding)
►▼ Show Figures

Figure 1

12 pages, 3467 KiB  
Article
Analysis of Correlation between Pad Temperature and Asperity Angle in Chemical Mechanical Planarization
by Seonho Jeong, Kyeongwoo Jeong, Jinuk Choi and Haedo Jeong
Appl. Sci. 2021, 11(4), 1507; https://doi.org/10.3390/app11041507 - 7 Feb 2021
Cited by 12 | Viewed by 3451
Abstract
Chemical mechanical planarization (CMP) is a technology widely employed in device integration and planarization processes used in semiconductor fabrication. In CMP, the polishing pad plays a key role both mechanically and chemically. The surface of the pad, consisting of asperities and pores, undergoes [...] Read more.
Chemical mechanical planarization (CMP) is a technology widely employed in device integration and planarization processes used in semiconductor fabrication. In CMP, the polishing pad plays a key role both mechanically and chemically. The surface of the pad, consisting of asperities and pores, undergoes repeated cycles of glazing induced by polishing followed by the recovery of roughness by a conditioning process applied during CMP. As a polymer material, the pad also experiences thermal expansion from changes in temperature. Such changes can be expressed in terms of surface roughness values, but these do not fully capture the actual changes to the pad surface. In this study, the change in pad temperature occurring during CMP was analyzed with regard to its effect on the asperity angle, and the influence on CMP outcome was assessed. The changes in the surface asperities according to the steady-state pad temperature were evaluated using various measurement methods. The change in pad roughness was characterized in terms of the asperity angle, and the contact state predicted according to temperature were validated by measuring the contact perimeter, the number of contact points, and related values. Through Scanning Electron Microscope (SEM) and micro-CT analysis, it was confirmed that in the continuous polishing process and the conditioning process, the changes in asperity angle due to changes in pad temperature affect the polishing outcome. Full article
(This article belongs to the Special Issue Chemical Mechanical Polishing and Grinding)
►▼ Show Figures

Figure 1

Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:
 
Displaying articles 1-7
Back to TopTop