Selected Papers from GPVC Conferences

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Energy Science and Technology".

Deadline for manuscript submissions: closed (5 December 2021) | Viewed by 21039

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Guest Editor
School of Information and Communication Engineering, Sungkyunkwan University, Suwon 16419, Korea
Interests: high-efficiency silicon solar cell; PV module and system; PV system performance
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Guest Editor
Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
Interests: photodiode; electronic materials and devices; solar cell
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

As extreme weather has been worsening in recent years, the impact of the climate crisis will become even more serious in the near future. At the core of the climate crisis lies excessive carbon emission from the continued use of fossil fuels. Therefore, in order to fight against the climate crisis, achieving carbon neutrality is no longer a declarative agenda, but a historic mission of this century, which calls for a drastically increased use of renewable energy sources. Photovoltaic technology, as one of the leading renewable energy technologies, has reached an annual global installation of almost 120 GW, and is in the spotlight as a new growth engine for the energy industry. Even stronger growth in the photovoltaic and related industries in the future is expected. This Special Issue welcomes the submission of research papers that report new research findings in terms of photovoltaic technologies.

Topics of interest include but are not limited to the following:

  • Silicon solar cells and materials
  • II-VI & Chalcogenide compound based cells and materials
  • Quantum, Perovskite, Organic and Dye-sensitized solar cells
  • Hybrid photovoltaics
  • III-V compound-based concentrator and space PV systems
  • PV components, modules, systems, reliability, standardization, markets and policy

Prof. Dr. Eun-Chel Cho
Dr. Hongsub Jee
Guest Editors

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Applied Sciences is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • photovoltaics
  • solar cells
  • III-V photovoltaic
  • Perovskite
  • dye-sensitized
  • Chalcogenide

Published Papers (8 papers)

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Editorial

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2 pages, 158 KiB  
Editorial
Special Issue on “Selected Papers from GPVC Conferences”
by Hongsub Jee and Jaehyeong Lee
Appl. Sci. 2022, 12(17), 8564; https://doi.org/10.3390/app12178564 - 26 Aug 2022
Viewed by 826
Abstract
At the core of the climate crisis lies excessive carbon emissions from the continued use of fossil fuels [...] Full article
(This article belongs to the Special Issue Selected Papers from GPVC Conferences)

Research

Jump to: Editorial

7 pages, 1950 KiB  
Article
Optimization of Shingled-Type Lightweight Glass-Free Solar Modules for Building Integrated Photovoltaics
by Min-Joon Park, Sungmin Youn, Kiseok Jeon, Soo Ho Lee and Chaehwan Jeong
Appl. Sci. 2022, 12(10), 5011; https://doi.org/10.3390/app12105011 - 16 May 2022
Cited by 4 | Viewed by 2240
Abstract
High-power and lightweight photovoltaic (PV) modules are suitable for building-integrated photovoltaic (BIPV) systems. Due to the characteristics of the installation sites, the BIPV solar modules are limited by weight and installation area. In this study, we fabricated glass-free and shingled-type PV modules with [...] Read more.
High-power and lightweight photovoltaic (PV) modules are suitable for building-integrated photovoltaic (BIPV) systems. Due to the characteristics of the installation sites, the BIPV solar modules are limited by weight and installation area. In this study, we fabricated glass-free and shingled-type PV modules with an area of 1040 mm × 965 mm, which provide more conversion power compared to conventional PV modules at the same installed area. Further, we employed an ethylene tetrafluoroethylene sheet instead of a front cover glass and added an Al honeycomb sandwich structure to enhance the mechanical stability of lightweight PV modules. To optimize the conversion power of the PV module, we adjusted the amount of dispensed electrically conductive adhesives between the solar cells. Finally, we achieved a conversion power of 195.84 W at an area of 1.004 m2, and we performed standard reliability tests using a PV module that weighed only 9 kg/m2. Full article
(This article belongs to the Special Issue Selected Papers from GPVC Conferences)
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7 pages, 2200 KiB  
Article
Growth and Fabrication of GaAs Thin-Film Solar Cells on a Si Substrate via Hetero Epitaxial Lift-Off
by Seungwan Woo, Geunhwan Ryu, Taesoo Kim, Namgi Hong, Jae-Hoon Han, Rafael Jumar Chu, Jinho Bae, Jihyun Kim, In-Hwan Lee, Deahwan Jung and Won Jun Choi
Appl. Sci. 2022, 12(2), 820; https://doi.org/10.3390/app12020820 - 14 Jan 2022
Cited by 8 | Viewed by 2803
Abstract
We demonstrate, for the first time, GaAs thin film solar cells epitaxially grown on a Si substrate using a metal wafer bonding and epitaxial lift-off process. A relatively thin 2.1 μm GaAs buffer layer was first grown on Si as a virtual substrate, [...] Read more.
We demonstrate, for the first time, GaAs thin film solar cells epitaxially grown on a Si substrate using a metal wafer bonding and epitaxial lift-off process. A relatively thin 2.1 μm GaAs buffer layer was first grown on Si as a virtual substrate, and a threading dislocation density of 1.8 × 107 cm−2 was achieved via two In0.1Ga0.9As strained insertion layers and 6× thermal cycle annealing. An inverted p-on-n GaAs solar cell structure grown on the GaAs/Si virtual substrate showed homogenous photoluminescence peak intensities throughout the 2″ wafer. We show a 10.6% efficient GaAs thin film solar cell without anti-reflection coatings and compare it to nominally identical upright structure solar cells grown on GaAs and Si. This work paves the way for large-scale and low-cost wafer-bonded III-V multi-junction solar cells. Full article
(This article belongs to the Special Issue Selected Papers from GPVC Conferences)
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8 pages, 2372 KiB  
Article
Efficiency Enhancement of GaAs Single-Junction Solar Cell by Nanotextured Window Layer
by Chae-Won Kim, Gwang-Yeol Park, Jae-Cheol Shin and Hyo-Jin Kim
Appl. Sci. 2022, 12(2), 601; https://doi.org/10.3390/app12020601 - 08 Jan 2022
Cited by 6 | Viewed by 2917
Abstract
In order to improve efficiency of flexible III-V semiconductor multi-junction solar cells, it is important to enhance the current density for efficiency improvement and to attain an even efficiency of solar cells on a curved surface. In this study, the nanotextured InAlP window [...] Read more.
In order to improve efficiency of flexible III-V semiconductor multi-junction solar cells, it is important to enhance the current density for efficiency improvement and to attain an even efficiency of solar cells on a curved surface. In this study, the nanotextured InAlP window layer of a GaAs single-junction solar cell was employed to suppress reflectance in broad range. The nanotextured surface affects the reflectance suppression with the broad spectrum of wavelength, which causes it to increase the current density and efficiency of the GaAs single-junction solar cell and alleviate the efficiency drop at the high incident angle of the light source. Those results show the potential of the effectively suppressed reflectance of multi-junction solar cells and even performance of solar cells attached on a curved surface. Full article
(This article belongs to the Special Issue Selected Papers from GPVC Conferences)
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7 pages, 1330 KiB  
Article
Effects of Reflectance of Backsheets and Spacing between Cells on Photovoltaic Modules
by Hyunsoo Lim, Seong Hyeon Cho, Jiyeon Moon, Da Yeong Jun and Sung Hyun Kim
Appl. Sci. 2022, 12(1), 443; https://doi.org/10.3390/app12010443 - 03 Jan 2022
Cited by 10 | Viewed by 2222
Abstract
In the photovoltaic (PV) module manufacturing process, cell-to-module (CTM) loss is inevitably caused by the optical loss, and it generally leads to the output power loss of about 2~3%. It is known that the CTM loss rate can be reduced by increasing the [...] Read more.
In the photovoltaic (PV) module manufacturing process, cell-to-module (CTM) loss is inevitably caused by the optical loss, and it generally leads to the output power loss of about 2~3%. It is known that the CTM loss rate can be reduced by increasing the reflectance of a backsheet and reflective area through widening spaces between the PV cell strings. In this study, multi-busbars (MBB) and shingled PV cells were connected in series, and a mini-module composed of four cells was fabricated with a white and black backsheet to investigate the effects of reflectance of backsheets and space between the PV cells. Moreover, the MBB modules with cell gap spaces of 0.5 mm, 1.5 mm, and 2.5 mm were demonstrated with fixed 3 mm spaces between the strings. The shingled modules with varying spaces from 2 mm to 6 mm were also tested, and our results show that spacing between PV cells and strings should be well-balanced to minimize the CTM loss to maximize the output power (efficiency). Full article
(This article belongs to the Special Issue Selected Papers from GPVC Conferences)
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16 pages, 4986 KiB  
Article
Numerical Simulation and Experiment of a High-Efficiency Tunnel Oxide Passivated Contact (TOPCon) Solar Cell Using a Crystalline Nanostructured Silicon-Based Layer
by Muhammad Quddamah Khokhar, Shahzada Qamar Hussain, Muhammad Aleem Zahid, Duy Phong Pham, Eun-Chel Cho and Junsin Yi
Appl. Sci. 2022, 12(1), 392; https://doi.org/10.3390/app12010392 - 31 Dec 2021
Cited by 7 | Viewed by 3657
Abstract
We report on the tunnel oxide passivated contact (TOPCon) using a crystalline nanostructured silicon-based layer via an experimental and numerical simulation study. The minority carrier lifetime and implied open-circuit voltage reveals an ameliorated passivation property, which gives the motivation to run a simulation. [...] Read more.
We report on the tunnel oxide passivated contact (TOPCon) using a crystalline nanostructured silicon-based layer via an experimental and numerical simulation study. The minority carrier lifetime and implied open-circuit voltage reveals an ameliorated passivation property, which gives the motivation to run a simulation. The passivating contact of an ultra-thin silicon oxide (1.2 nm) capped with a plasma enhanced chemical vapor deposition (PECVD) grown 30 nm thick nanocrystalline silicon oxide (nc-SiOx), provides outstanding passivation properties with low recombination current density (Jo) (~1.1 fA/cm2) at a 950 °C annealing temperature. The existence of a thin silicon oxide layer (SiO2) at the rear surface with superior quality (low pinhole density, Dph < 1 × 10−8 and low interface trap density, Dit ≈ 1 × 108 cm−2 eV−1), reduces the recombination of the carriers. The start of a small number of transports by pinholes improves the fill factor (FF) up to 83%, reduces the series resistance (Rs) up to 0.5 Ω cm2, and also improves the power conversion efficiency (PEC) by up to 27.4%. The TOPCon with a modified nc-SiOx exhibits a dominant open circuit voltage (Voc) of 761 mV with a supreme FF of 83%. Our simulation provides an excellent match with the experimental results and supports excellent passivation properties. Overall, our study proposed an ameliorated knowledge about tunnel oxide, doping in the nc-SiOx layer, and additionally about the surface recombination velocity (SRV) impact on TOPCon solar cells. Full article
(This article belongs to the Special Issue Selected Papers from GPVC Conferences)
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7 pages, 2325 KiB  
Article
CuInSe2-Based Near-Infrared Photodetector
by Sung-Tae Kim, Ji-Seon Yoo, Min-Woo Lee, Ji-Won Jung and Jae-Hyung Jang
Appl. Sci. 2022, 12(1), 92; https://doi.org/10.3390/app12010092 - 22 Dec 2021
Cited by 5 | Viewed by 2607
Abstract
Near-infrared (NIR) photodetectors have interesting roles in optical fiber communications and biomedical applications. Conventional NIR photodetectors have been realized using InGaAs and Ge, of which the cut-off wavelengths exceed 1500 nm. Si-based photodetectors exhibit limited external quantum efficiency at wavelengths longer than 1000 [...] Read more.
Near-infrared (NIR) photodetectors have interesting roles in optical fiber communications and biomedical applications. Conventional NIR photodetectors have been realized using InGaAs and Ge, of which the cut-off wavelengths exceed 1500 nm. Si-based photodetectors exhibit limited external quantum efficiency at wavelengths longer than 1000 nm. By synthesizing a CuInSe2 compound on a glass substrate, photodetectors that can detect optical wavelengths longer than 1100 nm have been realized in this study. The bandgap energies of the CuInSe2 thin films were tuned by varying the Cu/In ratio from 1.02 to 0.87. The longest cut-off wavelength (1309 nm) was obtained from a CuInSe2 thin film having a Cu/In ratio of 0.87. The responsivity of the photodiode was measured under the illumination of a 1064 nm laser light. The photo responses exhibited linear response up to 2.33 mW optical illumination and a responsivity of 0.60 A/W at −0.4 V. Full article
(This article belongs to the Special Issue Selected Papers from GPVC Conferences)
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8 pages, 5724 KiB  
Article
Enhancement of Schottky Junction Silicon Solar Cell with CdSe/ZnS Quantum Dots Decorated Metal Nanostructures
by Ha Trang Nguyen, Thanh Thao Tran, Vishwa Bhatt, Manjeet Kumar, Jinwon Song and Ju-Hyung Yun
Appl. Sci. 2022, 12(1), 83; https://doi.org/10.3390/app12010083 - 22 Dec 2021
Cited by 4 | Viewed by 2543
Abstract
Recently, in the solar energy society, several key technologies have been reported to meet a grid parity, such as cost-efficient materials, simple processes, and designs. Among them, the assistive plasmonic of metal nanoparticles (MNPs) integrating with the downshifting on luminescent materials attracts much [...] Read more.
Recently, in the solar energy society, several key technologies have been reported to meet a grid parity, such as cost-efficient materials, simple processes, and designs. Among them, the assistive plasmonic of metal nanoparticles (MNPs) integrating with the downshifting on luminescent materials attracts much attention. Hereby, Si-based Schottky junction solar cells are fabricated and examined to enhance the performance. CdSe/ZnS quantum dots (QDs) with different gold nanoparticles (Au NPs) sizes were incorporated on a Si light absorbing layer. Due to the light scattering effect from plasmonic resonance, the sole Au NPs layer results in the overall enhancement of Si solar cell’s efficiency in the visible spectrum. However, the back-scattering and high reflectance of Au NPs lead to efficiency loss in the UV region. Therefore, the QDs layer acting as a luminescent downshifter is deployed for further efficiency enhancement. The QDs layer absorbs high-energy photons and re-emits lower energy photons in 528 nm of wavelength. Such a downshift layer can enhance the overall efficiency of Si solar cells due to poor intrinsic spectral response in the UV region. The optical properties of Au NPs and CdSe QDs, along with the electrical properties of solar cells in combination with Au/QD layers, are studied in depth. Moreover, the influence of Au NPs size on the solar cell performance has been investigated. Upon decreasing the diameters of Au NPs, the blueshift of absorbance has been observed, cooperating with QDs, which leads to the improvement of the quantum efficiency in the broadband of the solar spectrum. Full article
(This article belongs to the Special Issue Selected Papers from GPVC Conferences)
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