Integrated Circuit Design in Post-moore Era

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Energy Science and Technology".

Deadline for manuscript submissions: 5 July 2025 | Viewed by 1990

Special Issue Editor

Department of Electrical Engineering, Jiangnan University, Wuxi 214122, China
Interests: integrated circuit design; modeling and fabrication of semiconductor devices; spintronic devices; magnetic random access memory (MRAM) design
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

This Special Issue provides a platform for researchers to report their most recent progress in the field of integrated circuits, including integrated circuit design, technology, packaging and testing, etc. It will bring together, from a global perspective, scientists, researchers, end-users, and industry to exchange ideas, advance knowledge and report key issues of the post-Moore era technology. Topics of interest for this Special Issue include but are not limited to:

  • Analog integrated circuit design (including radio frequency circuit)
  • System on Chip (SoC)
  • Random access memory (RAM)
  • Digital circuit design
  • IC measurement and test
  • IC package
  • Key devices in integrated circuits

Prof. Dr. Yanfeng Jiang
Guest Editor

Manuscript Submission Information

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Keywords

  • integrated circuit design
  • post-moore era technology
  • system on chip
  • random access memory
  • IC test
  • IC package

Published Papers (2 papers)

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Research

10 pages, 2637 KiB  
Communication
A Radiation-Hardened Triple Modular Redundancy Design Based on Spin-Transfer Torque Magnetic Tunnel Junction Devices
Appl. Sci. 2024, 14(3), 1229; https://doi.org/10.3390/app14031229 - 01 Feb 2024
Viewed by 344
Abstract
Integrated circuits suffer severe deterioration due to single-event upsets (SEUs) in irradiated environments. Spin-transfer torque magnetic random-access memory (STT-MRAM) appears to be a promising candidate for next-generation memory as it shows promising properties, such as non-volatility, speed, and unlimited endurance. One of the [...] Read more.
Integrated circuits suffer severe deterioration due to single-event upsets (SEUs) in irradiated environments. Spin-transfer torque magnetic random-access memory (STT-MRAM) appears to be a promising candidate for next-generation memory as it shows promising properties, such as non-volatility, speed, and unlimited endurance. One of the important merits of STT-MRAM is its radiation hardness, thanks to its core component, a magnetic tunnel junction (MTJ), being capable of good function in an irradiated environment. This property makes MRAM attractive for space and nuclear technology applications. In this paper, a novel radiation-hardened triple modular redundancy (TMR) design for anti-radiation reinforcement is proposed based on the utilization of STT-MTJ devices. Simulation results demonstrate the radiation-hardened performance of the design. This shows improvements in the design’s robustness against ionizing radiation. Full article
(This article belongs to the Special Issue Integrated Circuit Design in Post-moore Era)
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13 pages, 4418 KiB  
Article
Non-Magnetic Circulator Based on a Time-Varying Phase Modulator
Appl. Sci. 2023, 13(1), 512; https://doi.org/10.3390/app13010512 - 30 Dec 2022
Viewed by 1071
Abstract
Non-reciprocal devices are key elements in modern wireless communication systems. The circulator devices can simultaneously save spectrum resources and antennas. A traditional circulator is made of ferrite materials with an external magnetic bias field, and its bulk and incompatibility with CMOS technology can [...] Read more.
Non-reciprocal devices are key elements in modern wireless communication systems. The circulator devices can simultaneously save spectrum resources and antennas. A traditional circulator is made of ferrite materials with an external magnetic bias field, and its bulk and incompatibility with CMOS technology can hardly satisfy the miniaturization and integration of modern high-speed communication systems. In recent years, there have been many outstanding achievements in the study of non-magnetic circulators, among which, the method of producing non-reciprocity by temporal modulation is considered the most likely to have a transformative influence on the industry. By varying one of the parameters of the system with time, the time inversion symmetry of the system can be broken so that the non-reciprocal devices can be formed by applying appropriate topological structures without the use of magnetic materials. In the paper, a new concept of a time-varying phase modulator (TVPM) is proposed to achieve a relatively simple method to break the symmetry of time inversion. Two different time-varying phase modulators and buffering units can be integrated to form a gyrator, with which a circulator can be formed. This paper provides a relatively simple design idea and shows the circuit design and implementation method as well as the numerical analysis and simulation results. The simulation results show that the insertion loss of the circulator at the center frequency is −1.7 dB and the isolation is −18 dB. The proposed non-magnetic circulator shows potential applicability in related 5G and pre-6G systems. Full article
(This article belongs to the Special Issue Integrated Circuit Design in Post-moore Era)
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