Research of Static and Dynamic Properties of Power Semiconductor Diodes at Low and Cryogenic Temperatures

Round 1

Reviewer 1 Report

The manuscript shows experimental results that obtained characteristics of power semiconductor diodes in a given temperature range (100 - 293 K). The authors present interesting results, the methodology is clear, and the conclusion is relevant. I would like to suggest an improvement of the results section.

 

Comments.

Line 133. "The nature of this decrease is curious. If we pay attention only to the characteristics 135 of samples 1,2,4, then we can assume that the reverse recovery time decreases almost linearly with decreasing temperature " Please, mention the figure that represents the trend.

Line 138: "sample 3 suggests" In what figure can I observe sample 3? From all the temperatures tested, which one is sample 3?

Line 151: "This can be seen from the transfer of the minimum current at a lower temperature in the direction of increasing voltage for each diode " In what figure can I see this

Figure 6: From that figure which option is test 1, or 2?

 

Author Response

Hello, thanks for your work, you can be sure that the work has become more correct and I hope it has become clearer.
As for line 133 and what is written below, I corrected it, there was an error based on the fact that for samples 1 and 2 there were only two dynamic measurements at two temperatures, so the "linear" change in their characteristics is obvious.
Everything related to the drawings has been corrected, I hope now it looks clearer.
It is probably worth warning that this version has been amended according to the remark of another reviewer.

Author Response File: Author Response.docx

Reviewer 2 Report

An electric machines based on high-temperature superconductors in the vast majority of cases works in a complex with a semiconductor energy converter: power factor corrector, rectifier, electric

trigger motor controller, etc. Due to the fact that superconducting electrical machines require cryogenic cooling circuit, it seems appropriate to investigate the possibility of integrating power semiconductor converters into a cryogenic circuit to impove the overall characteristics of the machine. Meanwhile, the main problem in the development of power semiconductors cryogenic cooling system is the unexplored effect of cryogenic cooling of components on device operation. In this paper, the researchers fill this gap by proposing an experimental study of the characteristics of four power diodes, and resulting numerical estimates. The measures were taken using a laboratory experimental setup.

I think that the manuscript is well written, well-illustrated and structured. I may only note as disadvantages:

1. It is necessary to write a more detailed annotation.

2. In the discussion section, it is necessary to discuss the practical applicability of the invention obtained. I suppose that it can be used in various fields of technology.

3. Minor spelling errors were found. In line 170, the word 'dependences' should be changed to 'dependencies'.

I think that the manuscript can be published with minor edits.

Author Response

Hello, thanks for your work.
I tried to expand the abstract a bit and in the discussion, if this is still not enough, I can expand it further.
I also looked through the article for minor errors, thanks for noticing.
It is probably worth warning that this version has been amended according to the remark of another reviewer.

Author Response File: Author Response.docx