Modeling, Fabrication, and Characterization of Semiconductor Materials and Devices

The density of donor-like state distributions in solution-processed indium–zinc-oxide (IZO) thin-film transistors (TFTs) is thoroughly analyzed using photon energy irradiation. This study focuses on quantitatively calculating the distribution of density of states (DOS) in IZO semiconductors, with a specific emphasis on their variation with indium concentration. Two calculation methods, namely photoexcited charge collection spectroscopy (PECCS) and photocurrent-induced DOS spectroscopy (PIDS), are employed to estimate the density of the donor-like states. This dual approach not only ensures the accuracy of the findings but also provides a comprehensive perspective on the properties of semiconductors. The results reveal a consistent characteristic: the Recombination–Generation (R-G) center energy E_T, a key aspect of the donor-like state, is acquired at approximately 3.26 eV, irrespective of the In concentration. This finding suggests that weak bonds and oxygen vacancies within the Zn-O bonding structure of IZO semiconductors act as the primary source of R-G centers, contributing to the donor-like state distribution. By highlighting this fundamental aspect of IZO semiconductors, this study enhances our understanding of their charge-transport mechanisms. Moreover, it offers valuable insight for addressing stability issues such as negative bias illumination stress, potentially leading to the improved performance and reliability of solution-processed IZO TFTs. The study contributes to the advancement of displays and technologies by presenting further innovations and applications for evaluating the fundamentals of semiconductors. Full article

Device physics and accurate transistor modeling are necessary to reduce the operating voltage near the threshold for power-constrained circuits. Conventional device modeling for metal-oxide-semiconductor (MOS) transistors focuses on operations in either strong or weak inversion regimes, and the electrostatics at gate biases near the threshold voltage is rarely studied. This research proposed an analytical model to describe the distribution of the surface potential along the channel for near-threshold operation. Numerical device simulations were also performed to investigate the electrostatics near the threshold voltage. The numerical simulation with constant carrier mobility showed an overshoot in the transconductance due to decay of the lateral electric field with gate bias. The decay of the lateral electric field was predicted by the proposed analytical surface potential model which considered widening the channel length with flooding of the inversion carriers in the channel and gate overlap regions. The channel length widening effect saturated as the gate bias further increased. Therefore, evident transconductance overshoot was observed near the threshold voltage in short-channel devices. Full article

Silver sulfide phases, such as body-centered cubic argentite and monoclinic acanthite, are widely known. Traditionally, acanthite is regarded as the only low-temperature phase of silver sulfide. However, the possible existence of other low-temperature phases of silver sulfide cannot be ruled out. Until now, there have been only a few suggestions about low-temperature Ag₂S phases that differ from monoclinic acanthite. The lack of a uniform approach has hampered the prediction of such phases. In this work, the use of such an effective tool as an evolutionary algorithm for the first time made it possible to perform a broad search for the model Ag₂S phases of silver sulfide, which are low-temperature with respect to cubic argentite. The possibility of forming Ag₂S phases with cubic, tetragonal, orthorhombic, trigonal, monoclinic, and triclinic symmetry is considered. The calculation of the cohesion energy and the formation enthalpy show, for the first time, that the formation of low-symmetry Ag₂S phases is energetically most favorable. The elastic stiffness constants c_ij of all predicted Ag₂S phases are computed, and their mechanical stability is determined. The densities of the electronic states of the predicted Ag₂S phases are calculated. The prediction of low-temperature Ag₂S structures indicates the possibility of synthesizing new silver sulfide phases with improved properties. Full article

Understanding the density of state (DOS) distribution in solution-processed indium-zinc-oxide (IZO) thin-film transistors (TFTs) is crucial for addressing electrical instability. This paper presents quantitative calculations of the acceptor-like state distribution of solution-processed IZO TFTs using thermal energy analysis. To extract the acceptor-like state distribution, the electrical characteristics of IZO TFTs with various In molarity ratios were analyzed with respect to temperature. An Arrhenius plot was used to determine electrical parameters such as the activation energy, flat band energy, and flat band voltage. Two calculation methods, the simplified charge approximation and the Meyer–Neldel (MN) rule-based carrier–surface potential field-effect analysis, were proposed to estimate the acceptor-like state distribution. The simplified charge approximation established the modeling of acceptor-like states using the charge–voltage relationship. The MN rule-based field-effect analysis validated the DOS distribution through the carrier–surface potential relationship. In addition, this study introduces practical and effective approaches for determining the DOS distribution of solution-processed IZO semiconductors based on the In molarity ratio. The profiles of the acceptor-like state distribution provide insights into the electrical behavior depending on the doping concentration of the solution-processed IZO semiconductors. Full article

There are numerous scientific and engineering fields where the surface dielectric barrier discharge driven by nanosecond pulses (NS-SDBD) has important applications. To improve its performance, more research is still needed on the effects of electrical parameters on the NS-SDBD actuator’s discharge characteristics. In this study, a two-dimensional numerical model based on 13 discharge particle chemical processes was constructed using a numerical simulation approach, producing findings for the NS-SDBD actuator’s voltage–current (V-A) characteristics, discharge profile, and spectrum analysis. Additionally, a comprehensive investigation into the trends and underlying mechanisms of the effects of the voltage amplitude, pulse width, rise time, and fall time parameters on the discharge behavior of the NS-SDBD actuator was carried out. The results show that higher voltage amplitudes increase the maximum current and electron density, which enhances the plasma excitation effect. The peak power deposition during the second discharge is also raised by longer pulse widths and rise times, whereas the total power deposition during the second discharge is decreased by longer fall times. Full article

It is well known that the fluctuations in experimentally obtained characteristic impedance versus frequency curves are associated with resonances originated by standing waves bouncing back and forth between the transitions at the transmission line terminations. In fact, microwave engineers are aware of the difficulty to completely remove the parasitic effect of these transitions, which makes obtaining smooth and physically expected frequency-dependent curves for the characteristic impedance a tough task. Here, we point out for the first time that these curves exhibit additional fluctuations within the microwave range due to standing waves taking place within the transition itself. Experimental verification of this fact was carried out by extracting this fundamental parameter from measurements performed on on-chip and printed circuit board (PCB) lines using probe pad adapters and coaxial connectors. We demonstrate that the lumped circuit approach to represent the transitions lacks validity when the additional fluctuations due to the connectors become apparent, and we propose a new model including transmission line effects within the transition. Full article

Conductive polymer composites (CPCs) have shown potential for structural health monitoring applications based on repeated findings of irreversible transducer electromechanical property change due to fatigue. In this research, a high-fidelity stochastic modeling framework is explored for predicting the electromechanical properties of spherical element-based CPC materials at bulk scales. CPC dogbone specimens are manufactured via casting and their electromechanical properties are characterized via uniaxial tensile testing. Model parameter tuning, demonstrated in previous works, is deployed for improved simulation fidelity. Modeled predictions are found in agreement with experimental results and compared to predictions from a popular analytical model in the literature. Full article

Offset Corbino thin film transistor is a good candidate for high voltage thin film transistor (HVTFT) due to the uniform drain electric field distribution benefiting from the circular structure. The physical model of offset Corbino thin film transistor characteristics has yet to be clarified. In this study, Equations are derived to describe the current–voltage relations of Corbino TFT with offset at the drain or source sides. The influence of offset position and parameters on the saturation voltage and the saturation current was described quantitatively. Three-dimensional Computer-Aided Design simulation and experiment results verify the theoretical physical model. Our physical model provides design rules for high voltage offset Corbino TFT when considering the voltage tolerance and saturation current balance. Full article