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Next-Generation Temperature Sensors

A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Physical Sensors".

Deadline for manuscript submissions: closed (30 November 2022) | Viewed by 9035

Special Issue Editor


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Guest Editor
Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan
Interests: temperature sensor; organic electronics; flexible sensor; printed electronics; wearbale sensor
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Special Issue Information

Dear Colleagues,

Temperature is a one of the most important physical quantities. Monitoring temperature plays an important role in industry and research, such as controlling process temperatures, chemical reactions, and also for use in agriculture. Futhemore, the accurate measurement of localized temperature changes is important for understanding the thermal phenomena of homeostasis and realizing future sophisticated health diagnostics. For this reason, temperature sensors are integrated into wearable electronics to monitor body temperature.

The aim of this Special Issue is to cover a wide range of topics, including materials, fabrication process, mechanisms, and applications of temperature sensors for improving human life.

Both review articles and original research papers relating to temperature sensors are welcome.

Dr. Tomoyuki Yokota
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

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Published Papers (3 papers)

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19 pages, 6013 KiB  
Article
The Estimated Temperature of the Semiconductor Diode Junction on the Basis of the Remote Thermographic Measurement
by Arkadiusz Hulewicz, Krzysztof Dziarski and Zbigniew Krawiecki
Sensors 2023, 23(4), 1944; https://doi.org/10.3390/s23041944 - 09 Feb 2023
Viewed by 1485
Abstract
The value of a semiconductor’s diode temperature determines the correct operation of this element and its useful lifetime. One of the methods for determining the die temperature of a semiconductor diode is through the use of indirect thermographic measurements. The accuracy of the [...] Read more.
The value of a semiconductor’s diode temperature determines the correct operation of this element and its useful lifetime. One of the methods for determining the die temperature of a semiconductor diode is through the use of indirect thermographic measurements. The accuracy of the thermographic temperature measurement of the diode case depends on the prevailing conditions. The temperature of the mold body (the black part of the diode case made of epoxy resin) depends on the place of measurement. The temperature of the place above the die is closer to the die temperature than the temperature of mold body fragments above the base plate. In addition, the difficulty of its thermographic temperature measurement increases when the surface whose temperature is being measured is in motion. Then, the temperature measured by thermography may not apply to the warmest point in the case where the die temperature is determined. Information about the difference between temperatures of the different parts of the mold body and the die may be important. For this reason, it was decided to check how much the temperature measurement error of the die diode changes if the temperature of the diode case is not measured at the point that is above the die. Full article
(This article belongs to the Special Issue Next-Generation Temperature Sensors)
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10 pages, 1726 KiB  
Article
Temperature-Dependent Photoluminescence of CdS/ZnS Core/Shell Quantum Dots for Temperature Sensors
by Luping Tang, Yangyang Zhang, Chen Liao, Yingqing Guo, Yingtao Lu, Yixuan Xia and Yiwei Liu
Sensors 2022, 22(22), 8993; https://doi.org/10.3390/s22228993 - 21 Nov 2022
Cited by 5 | Viewed by 2533
Abstract
Exploring the temperature-dependent photoluminescence (PL) properties of quantum dots (QDs) is not only important for understanding the carrier recombination processes in QD-based devices but also critical for expanding their special applications at different temperatures. However, there is still no clear understanding of the [...] Read more.
Exploring the temperature-dependent photoluminescence (PL) properties of quantum dots (QDs) is not only important for understanding the carrier recombination processes in QD-based devices but also critical for expanding their special applications at different temperatures. However, there is still no clear understanding of the optical properties of CdS/ZnS core/shell QDs as a function of temperature. Herein, the temperature-dependent PL spectra of CdS/ZnS core/shell QDs were studied in the temperature range of 77–297 K. It was found that the band-edge emission (BEE) intensity decreases continuously with increasing temperature, while the surface-state emission (SSE) intensity first increases and then decreases. For BEE intensity, in the low temperature range, a small activation energy (29.5 meV) in the nonradiative recombination process led to the decrease of PL intensity of CdS/ZnS core/shell QDs; and at high temperature the PL intensity attenuation was caused by the thermal escape process. On the other hand, the temperature-dependent variation trend of the SSE intensity was determined by the competition of the trapping process of the surface trap states and the effect of thermally activated non-radiative defects. As the temperature increased, the PL spectra showed a certain degree of redshift in the peak energies of both band-edge and surface states and the PL spectrum full width at half-maximum (FWHM) increases, which was mainly due to the coupling of exciton and acoustic phonon. Furthermore, the CIE chromaticity coordinates turned from (0.190, 0.102) to (0.302, 0.194), which changed dramatically with temperature. The results indicated that the CdS/ZnS core/shell QDs are expected to be applied in temperature sensors. Full article
(This article belongs to the Special Issue Next-Generation Temperature Sensors)
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27 pages, 6897 KiB  
Article
Indirect Temperature Measurement in High Frequency Heating Systems
by Alexander Oskolkov, Igor Bezukladnikov and Dmitriy Trushnikov
Sensors 2021, 21(7), 2561; https://doi.org/10.3390/s21072561 - 06 Apr 2021
Cited by 5 | Viewed by 3946
Abstract
One of the biggest challenges of fused deposition modeling (FDM)/fused filament fabrication (FFF) 3D-printing is maintaining consistent quality of layer-to-layer adhesion, and on the larger scale, homogeneity of material inside the whole printed object. An approach for mitigating and/or resolving those problems, based [...] Read more.
One of the biggest challenges of fused deposition modeling (FDM)/fused filament fabrication (FFF) 3D-printing is maintaining consistent quality of layer-to-layer adhesion, and on the larger scale, homogeneity of material inside the whole printed object. An approach for mitigating and/or resolving those problems, based on the rapid and reliable control of the extruded material temperature during the printing process, was proposed. High frequency induction heating of the nozzle with a minimum mass (<1 g) was used. To ensure the required dynamic characteristics of heating and cooling processes in a high power (peak power > 300 W) heating system, an indirect (eddy current) temperature measurement method was proposed. It is based on dynamic analysis over various temperature-dependent parameters directly in the process of heating. To ensure better temperature measurement accuracy, a series-parallel resonant circuit containing an induction heating coil, an approach of desired signal detection, algorithms for digital signal processing and a regression model that determines the dependence of the desired signal on temperature and magnetic field strength were proposed. The testbed system designed to confirm the results of the conducted research showed the effectiveness of the proposed indirect measurement method. With an accuracy of ±3 °C, the measurement time is 20 ms in the operating temperature range from 50 to 350 °C. The designed temperature control system based on an indirect measurement method will provide high mechanical properties and consistent quality of printed objects. Full article
(This article belongs to the Special Issue Next-Generation Temperature Sensors)
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