Thin Film Transistor and Its Optoelectronic Applications

A special issue of Photonics (ISSN 2304-6732). This special issue belongs to the section "Optoelectronics and Optical Materials".

Deadline for manuscript submissions: closed (30 April 2023) | Viewed by 1534

Special Issue Editors


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Guest Editor
College of Optical Science and Engineering, Zhejiang University, Hangzhou, China
Interests: TFT non-volatile memory; TFT optoelectronic sensing device; field-effect transistors
College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, China
Interests: semiconductor device design and tape-out; semiconductor device modeling; reliability research; EDA platform integration; advanced display pixel circuit and drive circuit design and tape-out; weak signal driving circuit design and tape-out; realization of detection technology based on thin film transistor; FPGA hardware design and implementation; energy storage and conversion circuit design; low-temperature thin-film transistors; reliability; display technology; sensors
Special Issues, Collections and Topics in MDPI journals
Institute for Advanced Study, Shenzhen University, Shenzhen 518060, China
Interests: flexible and printed electronics; organic/inorganic semiconductor; surface and interface physics; nanostructured materials; nano-scale devices for technological applications (logic circuits, data storage, energy-harvesting, photonics, sensors)

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Guest Editor
Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
Interests: flash memory; RRAM; neural network chip; flexible functional electronics
College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, China
Interests: thin-film transistors; stability and reliability of electronic devices; photodetectors; gas sensors; fabrication and application of micro-nanoscale devices (logic circuits, data storage, energy sources, sensors, etc.)

Special Issue Information

Dear Colleagues,

This Special Issue invites manuscripts documenting recent advances in “Thin Film Transistor and Its Optoelectronic Applications”.

Thin-film transistors (TFTs) have gained an increasing amount of research attention for optoelectronics, since their three-terminal-modulated photon-to-charge conversion is more controllable than the two-terminal-modulated one in diodes, and the fact that their optoelectronic devices have good manufacture compatibility when they are integrated with transistor circuits.

Over the past few decades, numerous TFT optoelectronic devices have been developed, such as light-emitting transistors, photodetecting transistors, photomemristor transistors and photosynaptic transistors, and more device innovations are likely to emerge by bridging electronics and photonics in TFT configurations. Considerable research efforts have contributed greatly to the improvements in device performance, enhancing these TFT optoelectronic devices’ promise as candidates for practical optoelectronic systems.

We welcome research and review papers covering topics including, but not limited to:

  • Innovation in the field of TFT optoelectronic devices;
  • Material science, device structure engineering and interface science for performance optimization;
  • Technologies for patterning, integration and low-cost manufacturing;
  • Device mechanical robustness and improved capability to work in harsh environments;
  • Investigation of physics of photon-to-charge conversion and charge transport;
  • Compact modeling and simulation of device operation;
  • Critical assessment of device performance;
  • Design of circuits and systems.

We look forward to receiving your submissions.

Dr. Xiaojian She
Dr. Meng Zhang
Dr. Ye Zhou
Prof. Dr. Suting Han
Dr. Yan Yan
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Photonics is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • thin-film transistor
  • optoelectronics
  • device engineering
  • device physics
  • device patterning and integration
  • light emissions
  • photodetection
  • memristor
  • synaptic devices
  • flexibility
  • circuits

Published Papers (1 paper)

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Research

9 pages, 4595 KiB  
Communication
Understanding Illumination Effect on Saturation Behavior of Thin Film Transistor
by Shijie Jiang, Lurong Yang, Chenbo Huang, Qianqian Chen, Wei Zeng and Xiaojian She
Photonics 2023, 10(3), 309; https://doi.org/10.3390/photonics10030309 - 13 Mar 2023
Viewed by 1159
Abstract
Thin film transistor (TFT) has been a key device for planal drive display technology, and operating the TFT device in a saturation regime is particularly important for driving the light emission at a stable current. Considering the light emission reaches the TFT planal, [...] Read more.
Thin film transistor (TFT) has been a key device for planal drive display technology, and operating the TFT device in a saturation regime is particularly important for driving the light emission at a stable current. Considering the light emission reaches the TFT planal, it is thereby meaningful to understand the effect of illumination on TFT saturation behavior in order to improve the stability of light emission. Through experiments and simulations, our study shows that the drift current of photogenerated carriers can follow a saturation behavior when the channel conductance is dominated by charges induced by gate bias rather than the charges generated by photons, and vice versa. The obtained device physics insights are beneficial for developing TFT technologies that can drive light emission at a stable current. Full article
(This article belongs to the Special Issue Thin Film Transistor and Its Optoelectronic Applications)
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