Optoelectronic Detection Technologies and Applications

A special issue of Photonics (ISSN 2304-6732).

Deadline for manuscript submissions: 10 October 2024 | Viewed by 675

Special Issue Editors


E-Mail Website
Guest Editor
School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
Interests: photoelectronic detection; optical testing; laser technology and applications

E-Mail Website
Guest Editor
Engineering Research Center of Optical Instrument and System, The Ministry of Education, Shanghai Key Laboratory of Modern Optical System, University of Shanghai for Science and Technology, Shanghai 200093, China
Interests: photoelectronic information; nano-optics; optical thin films
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Photoelectronic detection technology, as one of the major means of acquiring information, has the advantages of high precision, fast response, remote detection, and so on. Photoelectronic detection technology is a comprehensive subject based on optics, mechanics, electronics, computers, etc. In the last few decades, enormous progress has been made in photoelectronic detection technology, due to the rapid development of laser technology, optical waveguide technology, optical fiber technology, photo-detection technology, computer technology, as well as the continuous emergence of new materials, new devices, and new processes. Photoelectronic detection technology has a wide range of applications and plays an increasingly important role in both military and civilian fields.

This Special Issue invites manuscripts that introduce the recent advances in “Optoelectronic Detection Technologies and Applications”. All theoretical, numerical, and experimental papers are welcomed. Topics include, but are not limited to, the following:

  • UV/VIS/IR detection technologies and applications;
  • Terahertz detection technologies and applications;
  • Low-level light detection technologies and applications;
  • Single-photon detection technologies and applications;
  • Laser detection technologies and applications;
  • Polarization detection technologies and applications;
  • Quantum detection technologies and applications;
  • Multi-spectral/high-spectral/hyper-spectral detection technologies and applications;
  • High dynamic imaging technologies and applications;
  • High-speed imaging technologies and applications;
  • 3D imaging technologies and applications;
  • Optoelectronic devices technologies and applications;
  • Novel Microwave detection technologies and applications;
  • Composite detection technologies and applications;
  • Space detection technologies and applications;
  • Intelligent optoelectronic detection technologies and applications.

Prof. Dr. Bincheng Li
Prof. Dr. Dawei Zhang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Photonics is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • UV/VIS/IR detection
  • terahertz detection
  • single-photon detection
  • laser detection
  • quantum detection
  • multi-spectral/high-spectral/hyper-spectral detection
  • high dynamic imaging
  • 3D imaging
  • optoelectronic devices
  • intelligent optoelectronic detection

Published Papers (1 paper)

Order results
Result details
Select all
Export citation of selected articles as:

Research

11 pages, 2067 KiB  
Article
Accurate Determination of the Low-Light-Level Absorption of DUV-Fused Silica at 193 nm with Laser Calorimetry
by Fengting Li, Haojie Sun, Weijing Liu, Ruijin Hong and Chunxian Tao
Photonics 2024, 11(4), 305; https://doi.org/10.3390/photonics11040305 - 27 Mar 2024
Viewed by 556
Abstract
The low-light-level absorption coefficient of OH-contained and H2-impregnated synthetic fused silica material in 193 nm optical lithography application is determined via a laser calorimetry measurement. The fluence and repetition rate dependences of the absorptances of the deep ultraviolet (DUV)-fused silica samples [...] Read more.
The low-light-level absorption coefficient of OH-contained and H2-impregnated synthetic fused silica material in 193 nm optical lithography application is determined via a laser calorimetry measurement. The fluence and repetition rate dependences of the absorptances of the deep ultraviolet (DUV)-fused silica samples with different thickness are measured. The measured dependences are fitted to a theoretical model, taking into consideration the generation and annealing of laser irradiation induced defects. The surface absorption, the low-light-level linear absorption coefficient, as well as the nonlinear absorption coefficient of the fused silica material are accurately determined via the fitting. The low-light-level linear absorption coefficients determined via the fluence dependence and the repetition rate dependence are in good agreement, demonstrating the reliability of the measured low-light-level absorption coefficient, which is the key parameter to the determination of the internal transmission of the DUV-fused silica material used in the 193 nm optical lithography. Full article
(This article belongs to the Special Issue Optoelectronic Detection Technologies and Applications)
Show Figures

Figure 1

Back to TopTop