Recent Advances and Future Perspectives in LED Technology

A special issue of Photonics (ISSN 2304-6732). This special issue belongs to the section "Optoelectronics and Optical Materials".

Deadline for manuscript submissions: 31 August 2024 | Viewed by 766

Special Issue Editor


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Guest Editor
School of Electrical Engineering and Computer Science, Russ College of Engineering and Technology, Ohio University, Athens, OH 45701, USA
Interests: LEDs; semiconductor materials and devices; semiconductor manufacturing processes

Special Issue Information

Dear Colleagues,

It is with pleasure that I announce a special issue for MDPI’s journal, Photonics. This topical issue, entitled “Recent Advances and Future Perspectives in LED Technology”, will showcase papers pertaining to the entire realm of light-emitting diode (LED) technology. The coverage will extend from materials and material growth to device structures, integration with luminescent conversion materials (phosphors, quantum dots, organic luminophores), as well as the applications of LEDs in various fields. We are particularly keen to publish papers on the following topics:

  • High-brightness LEDs;
  • Perovskite LEDs;
  • Phosphor-based infrared-emitting LEDs;
  • Deep UV LEDs;
  • LEDs based on emerging compound semiconductors: MgZnO, BN, etc.;
  • Novel phosphors, quantum dots and organic luminescent materials for LEDs;
  • Ongoing advances, such as solvatochromic LEDs, hyperspectral LEDs, etc.

Manuscripts related to these and other relevant topics will be given full consideration for publication in this Special Issue of Photonics. A limited number of review papers will also be included. While we expect most papers to be based on original experimental research, theoretical and modelling-based papers are also welcome.

Dr. Faiz Rahman
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Photonics is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • LED
  • compound semiconductor light emitter
  • luminescence
  • phosphor
  • solid-state lighting

Published Papers (1 paper)

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Research

12 pages, 10197 KiB  
Article
Photoreflectance Analysis of InAsPSb/InGaAs Multi-Quantum Well LED Structures with Different Well/Barrier Numbers
by Behnam Zeinalvand Farzin, S. Bahareh Seyedein Ardebili, Tae In Kang, Jong Su Kim, Phuc Dinh Nguyen and Sang Jun Lee
Photonics 2024, 11(3), 277; https://doi.org/10.3390/photonics11030277 - 21 Mar 2024
Viewed by 623
Abstract
InAsPSb is an emerging material used as an efficient barrier in quantum well structures, and the resulting devices can be employed in the mid-infrared region of the electromagnetic spectrum. This study investigates the photoreflectance spectra of two InAsPSb/InGaAs multi-quantum well light-emitting diodes with [...] Read more.
InAsPSb is an emerging material used as an efficient barrier in quantum well structures, and the resulting devices can be employed in the mid-infrared region of the electromagnetic spectrum. This study investigates the photoreflectance spectra of two InAsPSb/InGaAs multi-quantum well light-emitting diodes with 6 and 15 quantum well periods. The photoreflectance of the samples was analyzed at various temperatures and excitation powers. By examining the Franz-Keldysh oscillations in the spectra, we explored the influence of the number of well layers on the electric field strength in the junction. The results showed that the number of quantum wells can influence the electric field at the junction, potentially impacting the overall performance of the devices. The simulation of the electric field strength aligns with the results of the photoreflectance analysis. This suggests that the field extracted from Franz-Keldysh oscillations characterizes the field inside the multi-quantum wells, offering potential reasons for the observed effects on the number of multi-quantum wells in the field. Full article
(This article belongs to the Special Issue Recent Advances and Future Perspectives in LED Technology)
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