Semiconductor Hetero-Nanostructures for Opto-Electronics Applications

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: closed (30 July 2022) | Viewed by 6992

Special Issue Editors


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Guest Editor
Khlopina 8/3, Alferov Academic University, 194021 St. Petersburg, Russia
Interests: epitxy; heterostructures; single photon emitters; quantum dots; nanostructures; lasers
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Guest Editor
Connector Optics LLC, 16 lit B Domostroitelnaya Street, 194292 St. Petersburg, Russia
Interests: III-V heterostructures; molecular beam epitaxy (MBE); semiconductor lasers; vertical-cavity surface-emitting lasers (VCSEL); quantum cascade lasers (QCL); III-V on Si; diluted nitrides; quantum wells; quantum dots; super lattices; photonic crystals

Special Issue Information

Dear Colleagues,

Semiconductor Hetero-Nanostructures are part of a high-profile class of materials that provide unprecedented levels of functionality and precision. This has already led to ground-breaking applications in opto-electronics, and enables a route for the development of new technologies in key areas, such as telecommunication, information processing, sensing, nano(bio)medicine etc. In addition, nanoscale devices are also well suited to study a new physics, in particular in low dimensional systems. This issue will provide a platform to discuss new nanodevice structures and novel nano-materials for Opto-Electronics at different stages of development to find the ways towards industrial applications. The topics will include the latest developments of novel Semiconductor Hetero-Nanostructures used in lasers (edge emitters, VCSELs, QCLs, microdisk emitters), photodetectors, optical amplifiers, optical switches, waveguides and optoelectronic  devices as well as new device applications based on such nanostructures. It will bring insight into the relevant material parameters that play a key role in device functionality, as well as the overall device design and resulting physics.

Prof. Dr. George E. Cirlin
Prof. Dr. A.Yu. Egorov
Guest Editors

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Keywords

  • heterostructure
  • heteroepitaxy
  • low dimensional system
  • laser
  • VCSEL
  • quantum cascade laser
  • photodetecror
  • III-V on Si

Published Papers (4 papers)

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Research

8 pages, 1334 KiB  
Article
Stimulated Emission up to 2.75 µm from HgCdTe/CdHgTe QW Structure at Room Temperature
by Vladimir V. Utochkin, Konstantin E. Kudryavtsev, Alexander A. Dubinov, Mikhail A. Fadeev, Vladimir V. Rumyantsev, Anna A. Razova, Egor V. Andronov, Vladimir Ya. Aleshkin, Vladimir I. Gavrilenko, Nikolay N. Mikhailov, Sergey A. Dvoretsky, Frederic Teppe and Sergey V. Morozov
Nanomaterials 2022, 12(15), 2599; https://doi.org/10.3390/nano12152599 - 28 Jul 2022
Cited by 4 | Viewed by 1593
Abstract
Heterostructures with thin Hg(Cd)Te/CdHgTe quantum wells (QWs) are attractive for the development of mid-infrared interband lasers. Of particular interest are room-temperature operating emitters for the short-wavelength infrared range (SWIR, typically defined as 1.7–3 μm). In this work, we report on the observation of [...] Read more.
Heterostructures with thin Hg(Cd)Te/CdHgTe quantum wells (QWs) are attractive for the development of mid-infrared interband lasers. Of particular interest are room-temperature operating emitters for the short-wavelength infrared range (SWIR, typically defined as 1.7–3 μm). In this work, we report on the observation of stimulated emission (SE) in the 2.65–2.75 µm wavelength range at room temperature in an optically pumped HgCdTe QW laser heterostructure. We study a series of three samples with lengths ranging from 2.5 to 7 mm and discuss the effects related to the non-uniformity of the excitation beam profile. SE threshold intensity and the magnitude of pump-induced carrier heating are found to be effectively dependent on the chip size, which should be accounted for in possible designs of HgCdTe-based optical converters. We also pay attention to the problem of active medium engineering in order to push the SE wavelength towards the 3–5 µm atmospheric window and to lower the SE threshold. Full article
(This article belongs to the Special Issue Semiconductor Hetero-Nanostructures for Opto-Electronics Applications)
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10 pages, 3060 KiB  
Article
Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory
by Vladislav O. Gridchin, Liliia N. Dvoretckaia, Konstantin P. Kotlyar, Rodion R. Reznik, Alesya V. Parfeneva, Anna S. Dragunova, Natalia V. Kryzhanovskaya, Vladimir G. Dubrovskii and George E. Cirlin
Nanomaterials 2022, 12(14), 2341; https://doi.org/10.3390/nano12142341 - 8 Jul 2022
Cited by 7 | Viewed by 1558
Abstract
GaN nanowires were grown using selective area plasma-assisted molecular beam epitaxy on SiOx/Si(111) substrates patterned with microsphere lithography. For the first time, the temperature–Ga/N2 flux ratio map was established for selective area epitaxy of GaN nanowires. It is shown that [...] Read more.
GaN nanowires were grown using selective area plasma-assisted molecular beam epitaxy on SiOx/Si(111) substrates patterned with microsphere lithography. For the first time, the temperature–Ga/N2 flux ratio map was established for selective area epitaxy of GaN nanowires. It is shown that the growth selectivity for GaN nanowires without any parasitic growth on a silica mask can be obtained in a relatively narrow range of substrate temperatures and Ga/N2 flux ratios. A model was developed that explains the selective growth range, which appeared to be highly sensitive to the growth temperature and Ga flux, as well as to the radius and pitch of the patterned pinholes. High crystal quality in the GaN nanowires was confirmed through low-temperature photoluminescence measurements. Full article
(This article belongs to the Special Issue Semiconductor Hetero-Nanostructures for Opto-Electronics Applications)
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13 pages, 2182 KiB  
Article
Anisotropic Radiation in Heterostructured “Emitter in a Cavity” Nanowire
by Alexey Kuznetsov, Prithu Roy, Valeriy M. Kondratev, Vladimir V. Fedorov, Konstantin P. Kotlyar, Rodion R. Reznik, Alexander A. Vorobyev, Ivan S. Mukhin, George E. Cirlin and Alexey D. Bolshakov
Nanomaterials 2022, 12(2), 241; https://doi.org/10.3390/nano12020241 - 13 Jan 2022
Cited by 12 | Viewed by 2579
Abstract
Tailorable synthesis of axially heterostructured epitaxial nanowires (NWs) with a proper choice of materials allows for the fabrication of novel photonic devices, such as a nanoemitter in the resonant cavity. An example of the structure is a GaP nanowire with ternary GaPAs insertions [...] Read more.
Tailorable synthesis of axially heterostructured epitaxial nanowires (NWs) with a proper choice of materials allows for the fabrication of novel photonic devices, such as a nanoemitter in the resonant cavity. An example of the structure is a GaP nanowire with ternary GaPAs insertions in the form of nano-sized discs studied in this work. With the use of the micro-photoluminescence technique and numerical calculations, we experimentally and theoretically study photoluminescence emission in individual heterostructured NWs. Due to the high refractive index and near-zero absorption through the emission band, the photoluminescence signal tends to couple into the nanowire cavity acting as a Fabry–Perot resonator, while weak radiation propagating perpendicular to the nanowire axis is registered in the vicinity of each nano-sized disc. Thus, within the heterostructured nanowire, both amplitude and spectrally anisotropic photoluminescent signals can be achieved. Numerical modeling of the nanowire with insertions emitting in infrared demonstrates a decay in the emission directivity and simultaneous rise of the emitters coupling with an increase in the wavelength. The emergence of modulated and non-modulated radiation is discussed, and possible nanophotonic applications are considered. Full article
(This article belongs to the Special Issue Semiconductor Hetero-Nanostructures for Opto-Electronics Applications)
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12 pages, 5362 KiB  
Article
Optical Studies and Transmission Electron Microscopy of HgCdTe Quantum Well Heterostructures for Very Long Wavelength Lasers
by Vladimir V. Rumyantsev, Anna A. Razova, Leonid S. Bovkun, Dmitriy A. Tatarskiy, Vladimir Y. Mikhailovskii, Maksim S. Zholudev, Anton V. Ikonnikov, Tatyana A. Uaman Svetikova, Kirill V. Maremyanin, Vladimir V. Utochkin, Mikhail A. Fadeev, Vladimir G. Remesnik, Vladimir Y. Aleshkin, Nikolay N. Mikhailov, Sergey A. Dvoretsky, Marek Potemski, Milan Orlita, Vladimir I. Gavrilenko and Sergey V. Morozov
Nanomaterials 2021, 11(7), 1855; https://doi.org/10.3390/nano11071855 - 19 Jul 2021
Cited by 7 | Viewed by 2392
Abstract
HgTe/CdHgTe quantum well (QW) heterostructures have attracted a lot of interest recently due to insights they provided towards the physics of topological insulators and massless Dirac fermions. Our work focuses on HgCdTe QWs with the energy spectrum close to the graphene-like relativistic dispersion [...] Read more.
HgTe/CdHgTe quantum well (QW) heterostructures have attracted a lot of interest recently due to insights they provided towards the physics of topological insulators and massless Dirac fermions. Our work focuses on HgCdTe QWs with the energy spectrum close to the graphene-like relativistic dispersion that is supposed to suppress the non-radiative Auger recombination. We combine various methods such as photoconductivity, photoluminescence and magneto-optical measurements as well as transmission electron microscopy to retrofit growth parameters in multi-QW waveguide structures, designed for long wavelengths lasing in the range of 10–22 μm. The results reveal that the attainable operating temperatures and wavelengths are strongly dependent on Cd content in the QW, since it alters the dominating recombination mechanism of the carriers. Full article
(This article belongs to the Special Issue Semiconductor Hetero-Nanostructures for Opto-Electronics Applications)
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