Next-Generation Infrared Optoelectronic Nanomaterials and Devices

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanophotonics Materials and Devices".

Deadline for manuscript submissions: 10 September 2024 | Viewed by 2034

Special Issue Editors

Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215000, China
Interests: infrared optoelectronics; photodetectors; wearable devices; 2D nanomaterials

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Guest Editor
School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 611731, China
Interests: miniaturized energy devices; 2D materials
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Special Issue Information

Dear Colleagues,

Various two-dimensional (2D) nanomaterials play an important role in infrared optoelectronic devices. Such materials, including graphene, transition metal dichalcogenides, black phosphorus, and other layered or hybrid structures and heterostructures, have already been extensively investigated. Depending on the specific optical and mechanical properties of these materials, numerous kinds of electronic devices, such as photodetectors, light sources, modulators, and IR sensors, could be obtained. In order to fabricate these devices, chemical doping, mechanical stretching, gating, and/or other approaches have been introduced.

This Special Issue of Nanomaterials will present comprehensive research on the theoretical design and experimental methods to obtain next-generation infrared optoelectronics devices with nanomaterials. This includes colloid quantum dots, graphene, 2D semiconductors, perovskites, and other advanced nanomaterials and their applications in the entire infrared range (from near to mid- and far infrared). We encourage authors to contribute original research articles and review papers with current knowledge of nanomaterials to design next-generation devices.

Potential topics include but are not limited to:

  • Infrared and mid-infrared optoelectronics;
  • IR and mid-IR photodetectors;
  • Heterostructures;
  • Amplitude modulators, phase modulators, and other optical modulators;
  • Tunable electronic properties;
  • Nonlinear optical properties;
  • Band alignment and charge transfer;
  • Semiconductor moiré materials.

Dr. Xuechao Yu
Dr. Qiu Jiang
Guest Editors

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Keywords

  • infrared optoelectronics
  • optical modulators
  • photodetectors
  • wearable devices
  • 2D nanomaterials

Published Papers (2 papers)

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Research

13 pages, 3349 KiB  
Article
Fano Resonance in Near-Field Thermal Radiation of Two-Dimensional Van der Waals Heterostructures
by Huihai Wu, Xiaochuan Liu, Keyong Zhu and Yong Huang
Nanomaterials 2023, 13(8), 1425; https://doi.org/10.3390/nano13081425 - 20 Apr 2023
Cited by 1 | Viewed by 1429
Abstract
Two-dimensional (2D) materials and their vertically stacked heterostructures have attracted much attention due to their novel optical properties and strong light-matter interactions in the infrared. Here, we present a theoretical study of the near-field thermal radiation of 2D vdW heterostructures vertically stacked of [...] Read more.
Two-dimensional (2D) materials and their vertically stacked heterostructures have attracted much attention due to their novel optical properties and strong light-matter interactions in the infrared. Here, we present a theoretical study of the near-field thermal radiation of 2D vdW heterostructures vertically stacked of graphene and monolayer polar material (2D hBN as an example). An asymmetric Fano line shape is observed in its near-field thermal radiation spectrum, which is attributed to the interference between the narrowband discrete state (the phonon polaritons in 2D hBN) and a broadband continuum state (the plasmons in graphene), as verified by the coupled oscillator model. In addition, we show that 2D van der Waals heterostructures can achieve nearly the same high radiative heat flux as graphene but with markedly different spectral distributions, especially at high chemical potentials. By tuning the chemical potential of graphene, we can actively control the radiative heat flux of 2D van der Waals heterostructures and manipulate the radiative spectrum, such as the transition from Fano resonance to electromagnetic-induced transparency (EIT). Our results reveal the rich physics and demonstrate the potential of 2D vdW heterostructures for applications in nanoscale thermal management and energy conversion. Full article
(This article belongs to the Special Issue Next-Generation Infrared Optoelectronic Nanomaterials and Devices)
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20 pages, 10434 KiB  
Article
Broadband and Incident-Angle-Modulation Near-Infrared Polarizers Based on Optically Anisotropic SnSe
by Zhengfeng Guo, Honggang Gu, Yali Yu, Zhongming Wei and Shiyuan Liu
Nanomaterials 2023, 13(1), 134; https://doi.org/10.3390/nano13010134 - 27 Dec 2022
Cited by 4 | Viewed by 1611
Abstract
Optical anisotropy offers an extra degree of freedom to dynamically and reversibly regulate polarizing optical components, such as polarizers, without extra energy consumption and with high modulating efficiency. In this paper, we theoretically and numerically design broadband and incident-angle-modulation near-infrared polarizers, based on [...] Read more.
Optical anisotropy offers an extra degree of freedom to dynamically and reversibly regulate polarizing optical components, such as polarizers, without extra energy consumption and with high modulating efficiency. In this paper, we theoretically and numerically design broadband and incident-angle-modulation near-infrared polarizers, based on the SnSe, whose optical anisotropy is quantitatively evaluated by the complete dielectric tensor, complex refractive index tensor, and derived birefringence (~|Δn|max = 0.4) and dichroism (~|Δk|max = 0.4). The bandwidth of a broadband polarizer is 324 nm, from 1262 nm to 1586 nm, with an average extinction ratio above 23 dB. For the incident-angle-modulation near-infrared polarizer, the high incident angles dynamically and reversibly modulate its working wavelength with a maximum extinction ratio of 71 dB. Numerical simulations and theoretical calculations reveal that the considerable absorption for p light and continuously and relatively low absorption of s light lead to the broadband polarizer, while the incident-angle-modulation one mainly arises from the blue shift of corresponding wavelength of p light’s minimum reflectance. The proposed novel design of polarizers based on SnSe are likely to be mass-produced and integrated into an on-chip system, which opens up a new thought to design polarizing optical components by utilizing other low-symmetry materials. Full article
(This article belongs to the Special Issue Next-Generation Infrared Optoelectronic Nanomaterials and Devices)
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