Semiconductor Nanostructures for Light-Emitting Devices and Light-Energy Conversion Systems

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: closed (10 April 2024) | Viewed by 814

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Guest Editor
School of Physics & Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China
Interests: quantum dots; advanced optical materials; optoelectronic device

Special Issue Information

Dear Colleagues,

The Special Issue aims to cover a broad range of topics related to the use of nanomaterials, including quantum dots, perovskites, etc., in the design and fabrication of light-emitting diodes (LEDs), solar cells, photodetectors and other optoelectronic devices. Topics of interest include, but are not limited to, the synthesis and characterization of nanomaterials, the design of nanomaterial-based LED architectures, and the optimization of LED performance through nanomaterial engineering.

We hope that this Special Issue will provide a platform for researchers to share their insights and progress and will serve as a valuable resource for scientists and engineers working in the area of optoelectronics.

Dr. Xiaoli Zhang
Guest Editor

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Keywords

  • nanomaterials
  • LEDs
  • solar cells
  • photodetectors
  • energy-conversion devices

Published Papers (1 paper)

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Research

8 pages, 2970 KiB  
Article
High Thermal Performance Ultraviolet (368 nm) AlGaN-Based Flip-Chip LEDs with an Optimized Structure
by Guanlang Sun, Taige Dong, Aixin Luo, Jiachen Yang, Ying Dong, Guangda Du, Zekai Hong, Chuyu Qin and Bingfeng Fan
Nanomaterials 2024, 14(3), 267; https://doi.org/10.3390/nano14030267 - 26 Jan 2024
Viewed by 654
Abstract
In this study, we have fabricated a 368 nm LED with an epitaxial Indium Tin Oxide (ITO) contact layer. We analyze the thermal performance of the flip-chip LED with a symmetric electrode and metal reflective layer, applying ANSYS to build a coupled electro-thermal [...] Read more.
In this study, we have fabricated a 368 nm LED with an epitaxial Indium Tin Oxide (ITO) contact layer. We analyze the thermal performance of the flip-chip LED with a symmetric electrode and metal reflective layer, applying ANSYS to build a coupled electro-thermal finite element model (FEM) of the temperature distribution in the multiple quantum wells (MQWs). We compare our system with the traditional Au-bump flip-chip LED and a flip-chip LED with a Distributed Bragg Reflector (DBR) layer. The simulation results have shown that the flip-chip LED with a metal reflective layer and symmetric electrode exhibits better heat dissipation performance, particularly at high input power. The influence of the insulating layer on the LED chip junction temperature is also examined. The simulation data establish an effect due to the thermal conductivity of the insulating layer in terms of heat dissipation, but this effect is negligible at an insulation layer thickness ≤1 µm. Full article
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