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Nanomaterials
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Advances in Nanotechnology for RF and Terahertz
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Advances in Nanotechnology for RF and Terahertz

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: 31 May 2024 | Viewed by 3333

Special Issue Editors

Dr. Jung Han Choi

E-Mail Website
Guest Editor
Fraunhofer Instite (Heinrich-Hertz), Berlin, Germany
Interests: high-frequency engineering (devices, circuits, packaging, measurements)
Dr. Dong-Woo Kang

E-Mail Website
Guest Editor
Electronics Telecommunications Research Institute (ETRI), Daejeon, Republic of Korea
Interests: RF/millimeter-wave/Terahertz integrated circuits using CMOS/SiGe technology, antenna, antenna-in/on-package (AiP/AoP)

Special Issue Information

Dear Colleagues,

Recently, considerable RF R and Ds in both industry and academia have been moving towards millimeter-wave, sub-THz, and THz regimes. There has been great potential observed using recent nanodevices, such as Si CMOS, SiGe HBT, III-V devices (HEMTs, HBTs), 2-dimensional nanodevices, and nano optical devices, to realize integrated circuits for low-power consumption, array implementations, and higher output power. However, lots of researchers are still investigating the technical feasibilities as to whether these frequencies could be practically deployed for commercial purposes in the near future. Significant motivations behind these ambitious R and Ds are the exploitations of such high frequencies for next-generation mobile technologies, 6G, and high-precision radar and sensor applications. Through intensive and concentrated efforts, technical bottlenecks have been identified, overcome, and gradually improved, e.g., output power. In addition, packaging is of great concern for ensuring low cost, maintaining reproducible RF performances. Several different packaging materials and concepts have been reported and demonstrated successfully. Nevertheless, a path for commercialization seems some distance away, with respect to the degree of integration, cost, footprint, and reproducible RF performances, etc.

This Special Issue will include various multi-disciplinary efforts in both electronics and optics to make millimeter-wave, sub-THz, and THz technologies key enablers for next-generation mobile, radar, and sensor technologies. We will not limit submissions to those areas only, so a broad ranges of R and D regarding these frequencies will be considered for publication in order to open a public door for next-generation technologies using nano-scale devices.

Dr. Jung Han Choi
Dr. Dong-Woo Kang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • devices and circuits for millimeter-wave, sub-THz and THz
  • optic and optoelectronics technologeis
  • Si, III-V devices, 2-dimenstional devices
  • pakagings (material, assembly, etc.) for millimeter-wave, sub-THz and THz
  • new emerging concepts: devices, circuits, sub-systems, etc.

Published Papers (3 papers)

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Research

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13 pages, 5640 KiB  
Article
A Dual-Mode CMOS Power Amplifier with an External Power Amplifier Driver Using 40 nm CMOS for Narrowband Internet-of-Things Applications
by Hyunjin Ahn, Kyutaek Oh, Se-Eun Choi, Dong-Hee Son, Ilku Nam, Kyoohyun Lim and Ockgoo Lee
Nanomaterials 2024, 14(3), 262; https://doi.org/10.3390/nano14030262 - 25 Jan 2024
Viewed by 705
Abstract
The narrowband Internet-of-Things (NB-IoT) has been developed to provide low-power, wide-area IoT applications. The efficiency of a power amplifier (PA) in a transmitter is crucial for a longer battery lifetime, satisfying the requirements for output power and linearity. In addition, the design of [...] Read more.
The narrowband Internet-of-Things (NB-IoT) has been developed to provide low-power, wide-area IoT applications. The efficiency of a power amplifier (PA) in a transmitter is crucial for a longer battery lifetime, satisfying the requirements for output power and linearity. In addition, the design of an internal complementary metal-oxide semiconductor (CMOS) PA is typically required when considering commercial applications to include the operation of an optional external PA. This paper presents a dual-mode CMOS PA with an external PA driver for NB-IoT applications. The proposed PA supports an external PA mode without degrading the performances of output power, linearity, and stability. In the operation of an external PA mode, the PA provides a sufficient gain to drive an external PA. A parallel-combined transistor method is adopted for a dual-mode operation and a third-order intermodulation distortion (IMD3) cancellation. The proposed CMOS PA with an external PA driver was implemented using 40 nm-CMOS technology. The PA achieves a gain of 20.4 dB, a saturated output power of 28.8 dBm, and a power-added efficiency (PAE) of 57.8% in high-power (HP) mode at 920 MHz. With an NB-IoT signal (200 kHz π/4-differential quadrature phase shift keying (DQPSK)), the proposed PA achieves 24.2 dBm output power (Pout) with a 31.0% PAE, while satisfying −45 dBc adjacent channel leakage ratio (ACLR). More than 80% of the current consumption at 12 dBm Pout could be saved compared to that in HP mode when the proposed PA operates in low-power (LP) mode. The implemented dual-mode CMOS PA provides high linear output power with high efficiency, while supporting an external PA mode. The proposed PA is a good candidate for NB-IoT applications. Full article
(This article belongs to the Special Issue Advances in Nanotechnology for RF and Terahertz)
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8 pages, 2612 KiB  
Communication
A 37–40 GHz 6-Bits Switched-Filter Phase Shifter Using 150 nm GaN HEMT
by Jae-Hyeok Song, Eun-Gyu Lee, Jae-Eun Lee, Jeong-Taek Son, Joon-Hyung Kim, Min-Seok Baek and Choul-Young Kim
Nanomaterials 2023, 13(20), 2752; https://doi.org/10.3390/nano13202752 - 12 Oct 2023
Cited by 2 | Viewed by 1050
Abstract
In this paper, we present a 6-bit phase shifter designed and fabricated using the 150 nm GaN HEMT process. The designed phase shifter operates within the n260 (37~40 GHz) band, as specified in the 5G NR standard, and employs the structure of a [...] Read more.
In this paper, we present a 6-bit phase shifter designed and fabricated using the 150 nm GaN HEMT process. The designed phase shifter operates within the n260 (37~40 GHz) band, as specified in the 5G NR standard, and employs the structure of a switched-filter phase shifter. By serially connecting six single-bit phase shifters, ranging from 180° to 5.625°, the designed phase shifter achieves a phase range of 360°. The fabricated phase shifter exhibits a minimum insertion loss of 5 dB and an RMS phase error of less than 5.36° within the 37 to 40 GHz. This phase shifter is intended for seamless integration with high-power RF circuits. Full article
(This article belongs to the Special Issue Advances in Nanotechnology for RF and Terahertz)
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Review

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36 pages, 5342 KiB  
Review
Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics
by Muhammad Mahmudul Hasan, Chunlei Wang, Nezih Pala and Michael Shur
Nanomaterials 2024, 14(5), 460; https://doi.org/10.3390/nano14050460 - 01 Mar 2024
Viewed by 1074
Abstract
High thermal conductivity and a high breakdown field make diamond a promising candidate for high-power and high-temperature semiconductor devices. Diamond also has a higher radiation hardness than silicon. Recent studies show that diamond has exceptionally large electron and hole momentum relaxation times, facilitating [...] Read more.
High thermal conductivity and a high breakdown field make diamond a promising candidate for high-power and high-temperature semiconductor devices. Diamond also has a higher radiation hardness than silicon. Recent studies show that diamond has exceptionally large electron and hole momentum relaxation times, facilitating compact THz and sub-THz plasmonic sources and detectors working at room temperature and elevated temperatures. The plasmonic resonance quality factor in diamond TeraFETs could be larger than unity for the 240–600 GHz atmospheric window, which could make them viable for 6G communications applications. This paper reviews the potential and challenges of diamond technology, showing that diamond might augment silicon for high-power and high-frequency compact devices with special advantages for extreme environments and high-frequency applications. Full article
(This article belongs to the Special Issue Advances in Nanotechnology for RF and Terahertz)
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