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Nanomaterials
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Electron Transport and Electronic Properties in Low-Dimensional Materials
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Electron Transport and Electronic Properties in Low-Dimensional Materials

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "2D and Carbon Nanomaterials".

Deadline for manuscript submissions: closed (5 October 2023) | Viewed by 3808

Special Issue Editor

Prof. Dr. Yanpeng Liu

E-Mail Website
Guest Editor
Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
Interests: chemical vapor deposition (CVD) growth of 2D materials; exploiting new physical phenomenon in 2D materials and their heterostructure; in-depth understanding the physical properties of water & ice with 2D materials; developing novel nano- and micro- devices towards commercialization

Special Issue Information

Dear Colleagues,

Low-dimensional materials, particularly due to quantum confined features, present unique electron transport behaviors that make them perfect to be explored in diverse manners, paving the way towards electronic devices via continuous breakthroughs. Recently, low-dimensional materials have been vertically stacked into van der Waals heterostructures, and the interlayer coupling enables many exciting electronic characteristics that are absent in their monomer counterparts. In particular, low-dimensional materials and related heterostructures undergo several micron/nano-fabrication procedures before being mounted into each specified device. Electrical and magnetic fields are the two prevalent methods to manifest the electron trajectories, classic transport and even quantum transport behavior at an extra low temperature. In addition, optical and mechanic means have been employed to manipulate the electronic properties and electron transports, stimulating intense new scientific findings. Meanwhile, scanning tunneling microscopes and theoretical calculations, such as local field effect transistors, in situ gating methods and density functional theory, have been widely adopted to tackle complex challenges.

This collection focuses on electron transport and electronic properties in low-dimensional materials and offers an systematical overview of experimental and theoretical research milestones, as well as emerging new phenomena and potential tuning approaches, along with attempts to identify common challenges in the field and provide feasible solutions with joint efforts from different communities.

Prof. Dr. Yanpeng Liu
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • low-dimensional materials
  • electron transport
  • electronic properties
  • manipulating protocols
  • physical phenomena

Published Papers (3 papers)

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Research

13 pages, 3969 KiB  
Article
Impact of Surface Trap States on Electron and Energy Transfer in CdSe Quantum Dots Studied by Femtosecond Transient Absorption Spectroscopy
by Hongbin Dou, Chunze Yuan, Ruixue Zhu, Lin Li, Jihao Zhang and Tsu-Chien Weng
Nanomaterials 2024, 14(1), 34; https://doi.org/10.3390/nano14010034 - 22 Dec 2023
Viewed by 1272
Abstract
The presence of surface trap states (STSs) is one of the key factors to affect the electronic and optical properties of quantum dots (QDs), however, the exact mechanism of how STSs influence QDs remains unclear. Herein, we demonstrated the impact of STSs on [...] Read more.
The presence of surface trap states (STSs) is one of the key factors to affect the electronic and optical properties of quantum dots (QDs), however, the exact mechanism of how STSs influence QDs remains unclear. Herein, we demonstrated the impact of STSs on electron transfer in CdSe QDs and triplet-triplet energy transfer (TTET) from CdSe to surface acceptor using femtosecond transient absorption spectroscopy. Three types of colloidal CdSe QDs, each containing various degrees of STSs as evidenced by photoluminescence and X-ray photoelectron spectroscopy, were employed. Time-resolved emission and transient absorption spectra revealed that STSs can suppress band-edge emission effectively, resulting in a remarkable decrease in the lifetime of photoelectrons in QDs from 17.1 ns to 4.9 ns. Moreover, the investigation of TTET process revealed that STSs can suppress the generation of triplet exciton and effectively inhibit band-edge emission, leading to a significant decrease in TTET from CdSe QDs to the surface acceptor. This work presented evidence for STSs influence in shaping the optoelectronic properties of QDs, making it a valuable point of reference for understanding and manipulating STSs in diverse QDs-based optoelectronic applications involving electron and energy transfer. Full article
(This article belongs to the Special Issue Electron Transport and Electronic Properties in Low-Dimensional Materials)
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10 pages, 652 KiB  
Article
Mesoscopic Conductance Fluctuations in 2D HgTe Semimetal
by Daniiar Khudaiberdiev, Ze Don Kvon, Matvey V. Entin, Dmitriy A. Kozlov, Nikolay N. Mikhailov and Maxim Ryzhkov
Nanomaterials 2023, 13(21), 2882; https://doi.org/10.3390/nano13212882 - 31 Oct 2023
Viewed by 1156
Abstract
Mesoscopic conductance fluctuations were discovered in a weak localization regime of a strongly disordered two-dimensional HgTe-based semimetal. These fluctuations exist in macroscopic samples with characteristic sizes of 100 μm and exhibit anomalous dependences on the gate voltage, magnetic field, and temperature. They [...] Read more.
Mesoscopic conductance fluctuations were discovered in a weak localization regime of a strongly disordered two-dimensional HgTe-based semimetal. These fluctuations exist in macroscopic samples with characteristic sizes of 100 μm and exhibit anomalous dependences on the gate voltage, magnetic field, and temperature. They are absent in the regime of electron metal (at positive gate voltages) and strongly depend on the level of disorder in the system. All the experimental facts lead us to the conclusion that the origin of the fluctuations is a special collective state in which the current is conducted through the percolation network of electron resistances. We suppose that the network is formed by fluctuation potential whose amplitude is higher than the Fermi level of electrons due to their very low density. Full article
(This article belongs to the Special Issue Electron Transport and Electronic Properties in Low-Dimensional Materials)
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15 pages, 13175 KiB  
Article
Quantum Transport in Large-Scale Patterned Nitrogen-Doped Graphene
by Aleksander Bach Lorentzen, Mehdi Bouatou, Cyril Chacon, Yannick J. Dappe, Jérôme Lagoute and Mads Brandbyge
Nanomaterials 2023, 13(18), 2556; https://doi.org/10.3390/nano13182556 - 14 Sep 2023
Viewed by 983
Abstract
It has recently been demonstrated how the nitrogen dopant concentration in graphene can be controlled spatially on the nano-meter scale using a molecular mask. This technique may be used to create ballistic electron optics-like structures of high/low doping regions; for example, to focus [...] Read more.
It has recently been demonstrated how the nitrogen dopant concentration in graphene can be controlled spatially on the nano-meter scale using a molecular mask. This technique may be used to create ballistic electron optics-like structures of high/low doping regions; for example, to focus electron beams, harnessing the quantum wave nature of the electronic propagation. Here, we employ large-scale Greens function transport calculations based on a tight-binding approach. We first benchmark different tight-binding models of nitrogen in graphene with parameters based on density functional theory (DFT) and the virtual crystal approximation (VCA). Then, we study theoretically how the random distribution within the masked regions and the discreteness of the nitrogen scattering centers impact the transport behavior of sharp n−p and n−n′ interfaces formed by different, realistic nitrogen concentrations. We investigate how constrictions for the current can be realized by patterned high/low doping regions with experimentally feasible nitrogen concentrations. The constrictions can guide the electronic current, while the quantized conductance is significantly washed out due to the nitrogen scattering. The implications for device design is that a p−n junction with nitrogen corrugation should still be viable for current focusing. Furthermore, a guiding channel with less nitrogen in the conducting canal preserves more features of quantized conductance and, therefore, its low-noise regime. Full article
(This article belongs to the Special Issue Electron Transport and Electronic Properties in Low-Dimensional Materials)
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