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Nanomaterials
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2D Nanomaterials for Optoelectronic Devices
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2D Nanomaterials for Optoelectronic Devices

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: closed (30 August 2022) | Viewed by 10986

Special Issue Editor

Dr. Tilmar Kümmell

E-Mail Website
Guest Editor
Werkstoffe der Elektrotechnik and CENIDE, Universität Duisburg-Essen, Essen, Germany
Interests: 2D materials; light emitters; quantum dots; photoluminescence of nanostructures; optoelectronics
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

2D materials have turned out to be a very exciting playground for the next generation of optoelectronic devices. This is fostered by their unique characteristics:  They are mechanically robust, but flexible, and as van der Waals materials they can be integrated into a great variety of architectures without lattice constraints. They exhibit strong light-matter interaction; however they are fairly transparent due to their atomic-scale thickness. By taking benefit from their valley degree of freedom innovative devices with e.g. controlled helicity of emitted light can be developed. The large surface can be used to add enhanced functionalities to light sensors like sensitivity to the surrounding or gas detection. Many more promising concepts are emerging daily, stimulating a highly inventive research field. With the rise of industrial methods to produce 2D materials and heterostructures on large scale, recent works presented important steps on the way from lab to fab, but many challenges still have to be met, e.g. increasing quantum efficiencies or avoiding carrier losses during injection/extraction. Theoretical understanding of transport and recombination mechanisms and the role of defects is an indispensable requirement to develop new and innovative devices.    

The purpose of the present Special Issue is to present state-of-the-art research on optoelectronic devices based on 2D materials. It shall collect exciting concepts, theoretical background, relevant material synthesis and characterization, and of course novel devices by leading groups in the research community.

Dr. Tilmar Kümmell
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • 2D materials
  • transition metal dichalkogenide (TMDC)
  • light emitting devices
  • photodetectors
  • phototransistors
  • van der Waals heterostructures

Published Papers (5 papers)

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Research

11 pages, 9214 KiB  
Article
A Nano Refractive Index Sensing Structure for Monitoring Hemoglobin Concentration in Human Body
by Guoquan Zhou, Shubin Yan, Lili Chen, Xiaoyu Zhang, Lifang Shen, Pengwei Liu, Yang Cui, Jilai Liu, Tingsong Li and Yifeng Ren
Nanomaterials 2022, 12(21), 3784; https://doi.org/10.3390/nano12213784 - 27 Oct 2022
Cited by 5 | Viewed by 1926
Abstract
This paper proposes a nanosensor structure consisting of a metal–insulator–metal (MIM) waveguide with a rectangular root and a double-ring (SRRDR) with a rectangular cavity. In this paper, the cause and internal mechanism of Fano resonance are investigated by the finite element method (FEM), [...] Read more.
This paper proposes a nanosensor structure consisting of a metal–insulator–metal (MIM) waveguide with a rectangular root and a double-ring (SRRDR) with a rectangular cavity. In this paper, the cause and internal mechanism of Fano resonance are investigated by the finite element method (FEM), and the transport characteristics are optimized by changing various parameters of the structure. The results show that the structure can achieve double Fano resonance. Due to the destructive disturbance between the wideband mode of the inverted rectangle on the bus waveguide and the narrowband mode of the SRRDR, the output spectrum of the system shows an obvious asymmetric Fano diagram, and the structural parameters of the sensor have a great influence on the Fano resonance. By changing the sensitive parameters, the optimal sensitivity of the refractive index nanosensor is 2280 nm/RIU, and the coefficient of excellence (FOM) is 76.7. In addition, the proposed high-sensitivity nanosensor will be used to detect hemoglobin concentration in blood, which has positive applications for biosensors and has great potential for future nanosensing and optical integration systems. Full article
(This article belongs to the Special Issue 2D Nanomaterials for Optoelectronic Devices)
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10 pages, 1987 KiB  
Article
Ferroelectric Tuning of ZnO Ultraviolet Photodetectors
by Haowei Xie, Chenxu Kang, Muhammad Ahsan Iqbal, Xiaoliang Weng, Kewen Wu, Wei Tang, Lu Qi and Yu-Jia Zeng
Nanomaterials 2022, 12(19), 3358; https://doi.org/10.3390/nano12193358 - 27 Sep 2022
Cited by 6 | Viewed by 1882
Abstract
The ferroelectric field effect transistor (Fe-FET) is considered to be one of the most important low-power and high-performance devices. It is promising to combine a ferroelectric field effect with a photodetector to improve the photodetection performance. This study proposes a strategy for ZnO [...] Read more.
The ferroelectric field effect transistor (Fe-FET) is considered to be one of the most important low-power and high-performance devices. It is promising to combine a ferroelectric field effect with a photodetector to improve the photodetection performance. This study proposes a strategy for ZnO ultraviolet (UV) photodetectors regulated by a ferroelectric gate. The ZnO nanowire (NW) UV photodetector was tuned by a 2D CuInP2S6 (CIPS) ferroelectric gate, which decreased the dark current and enhanced the responsivity and detectivity to 2.40 × 104 A/W and 7.17 × 1011 Jones, respectively. This strategy was also applied to a ZnO film UV photodetector that was tuned by a P(VDF-TrFE) ferroelectric gate. Lower power consumption and higher performance can be enabled by ferroelectric tuning of ZnO ultraviolet photodetectors, providing new inspiration for the fabrication of high-performance photodetectors. Full article
(This article belongs to the Special Issue 2D Nanomaterials for Optoelectronic Devices)
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8 pages, 1928 KiB  
Article
Two-Dimensional Perovskite (PEA)2PbI4 Two-Color Blue-Green Photodetector
by Wei Dou, Ziwei Yin, Yi Zhang, Huiyong Deng and Ning Dai
Nanomaterials 2022, 12(15), 2556; https://doi.org/10.3390/nano12152556 - 25 Jul 2022
Cited by 4 | Viewed by 2696
Abstract
Perovskite materials have been widely used to fabricate solar cells, laser diodes and other photodevices, owing to the advantage of high absorption coefficient, long carrier life and shallow defect energy levels. However, due to easy hydrolysis, it is difficult to fabricate perovskite micro-nano [...] Read more.
Perovskite materials have been widely used to fabricate solar cells, laser diodes and other photodevices, owing to the advantage of high absorption coefficient, long carrier life and shallow defect energy levels. However, due to easy hydrolysis, it is difficult to fabricate perovskite micro-nano devices. Herein, we developed a water-free device fabrication technology and fabricated a two-dimensional (C6H5C2H4NH3)2PbI4 ((PEA)2PbI4) two-color blue-green light detector, which exhibits high detection performance under the illumination of two-color lasers (λ = 460 nm, 532 nm). Compared with bulk devices, the dark current of the fabricated devices (10−11 A) was reduced by 2 orders of magnitude. The peak responsivity and detectivity are about 1 A/W and 1011 Jones, respectively. The photodetection performance of the device is basically the same under the two-color lasers. Our results provide a new process to fabricate perovskite microelectronic devices, and the fabricated photodetector shows great application prospects in underwater detection, owing to the blue-green window existing in water. Full article
(This article belongs to the Special Issue 2D Nanomaterials for Optoelectronic Devices)
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12 pages, 3097 KiB  
Article
Correlated Electrical Conductivities to Chemical Configurations of Nitrogenated Nanocrystalline Diamond Films
by Abdelrahman Zkria, Hiroki Gima, Eslam Abubakr, Ashraf Mahmoud, Ariful Haque and Tsuyoshi Yoshitake
Nanomaterials 2022, 12(5), 854; https://doi.org/10.3390/nano12050854 - 3 Mar 2022
Cited by 10 | Viewed by 2091
Abstract
Diamond is one of the fascinating films appropriate for optoelectronic applications due to its wide bandgap (5.45 eV), high thermal conductivity (3320 W m−1·K−1), and strong chemical stability. In this report, we synthesized a type of diamond film called [...] Read more.
Diamond is one of the fascinating films appropriate for optoelectronic applications due to its wide bandgap (5.45 eV), high thermal conductivity (3320 W m−1·K−1), and strong chemical stability. In this report, we synthesized a type of diamond film called nanocrystalline diamond (NCD) by employing a physical vapor deposition method. The synthesis process was performed in different ratios of nitrogen and hydrogen mixed gas atmospheres to form nitrogen-doped (n-type) NCD films. A high-resolution scanning electron microscope confirmed the nature of the deposited films to contain diamond nanograins embedded into the amorphous carbon matrix. Sensitive spectroscopic investigations, including X-ray photoemission (XPS) and near-edge X-ray absorption fine structure (NEXAFS), were performed using a synchrotron beam. XPS spectra indicated that the nitrogen content in the film increased with the inflow ratio of nitrogen and hydrogen gas (IN/H). NEXAFS spectra revealed that the σ*C–C peak weakened, accompanied by a π*C=N peak strengthened with nitrogen doping. This structural modification after nitrogen doping was found to generate unpaired electrons with the formation of C–N and C=N bonding in grain boundaries (GBs). The measured electrical conductivity increased with nitrogen content, which confirms the suggestion of structural investigations that nitrogen-doping generated free electrons at the GBs of the NCD films. Full article
(This article belongs to the Special Issue 2D Nanomaterials for Optoelectronic Devices)
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10 pages, 5642 KiB  
Article
Preparation and Fluorescent Wavelength Control of Multi-Color Nitrogen-Doped Carbon Nano-Dots
by Wenli Li, Ju Tang, Yuzhao Li, Han Bai, Weizuo Zhang, Jin Zhang, Yiming Xiao and Wen Xu
Nanomaterials 2021, 11(12), 3190; https://doi.org/10.3390/nano11123190 - 25 Nov 2021
Cited by 4 | Viewed by 1703
Abstract
It is known that, by taking advantage of heteroatom doping, the electronic states and transition channels in carbon nano-dots (CNDs) can be effectively modulated. Thus, the photoluminescence (PL) properties of CNDs can be changed. For potential applications of CNDs as advanced materials for [...] Read more.
It is known that, by taking advantage of heteroatom doping, the electronic states and transition channels in carbon nano-dots (CNDs) can be effectively modulated. Thus, the photoluminescence (PL) properties of CNDs can be changed. For potential applications of CNDs as advanced materials for optoelectronic devices, it is important and significant to develop the practical techniques for doping heteroatoms into CNDs. In this work, we synthesize the multi-color fluorescent by using a fast and effective microwave method where the CNDs are nitrogen-doped. We examine the influence of different ratios of the raw materials on the structure and optical properties of N-CNDs. The results show that the prepared N-CNDs can generate blue (445 nm), green (546 nm), and orange (617 nm) fluorescence or PL with the mass ratio of the raw materials at 1:1, 1:2 and 1:3, respectively. We find that the N content in N-CNDs leads to different surface/edge states in n−π∗ domain. Thus, the wavelength of the PL emission from N-CNDs can be tuned via controlling the N concentration doped into the CNDs. Moreover, it is shown that the intensity of the PL from N-CNDs is mainly positively related to the content of C-O groups attached on the surface/edges of the N-CNDs. This study provides an effective experimental method and technical way to improve the fluorescent emission, and to modulate the color of the PL emission from CNDs. Full article
(This article belongs to the Special Issue 2D Nanomaterials for Optoelectronic Devices)
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