Nanostructured Electronic Components and Devices

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: 31 May 2024 | Viewed by 742

Special Issue Editor


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Guest Editor
Department of Information and Communication Engineering, Chaoyang University of Technology, Taichung, Taiwan
Interests: resistive random-access memory; dye-sensitized solar cells; thin-film growth; ferroelectric materials; nanophotonics devices

Special Issue Information

Dear Colleagues,

Nanostructured electronic components represent the pinnacle of miniaturization, where the manipulation of matter at the nanoscale bestows electronic devices with unprecedented performance and capabilities. These components, featuring meticulously engineered nanomaterials and architectures, offer a new frontier in electronics, promising advancements that were once considered beyond our reach.

The impact of nanoscale design on electronic components is profound. Nanostructured materials, such as quantum dots, nanowires, and two-dimensional materials, introduce unique properties, enabling faster and more efficient devices. Moreover, their utilization in transistors, sensors, energy storage, etc., opens doors to innovations with far-reaching consequences.

This Special Issue aims to assemble contributions from leading experts and research groups in this field to provide a comprehensive overview of the latest advances on the topic of “Nanostructured Electronic Components and Devices”. From nanoelectronics to nanophotonics, interplay between nanoscience and electronics promises to shape the future of technologies such as solar cells, and this collection of papers will offer invaluable insights into the state-of-the-art developments in this exciting domain.

Prof. Dr. Ming-Cheng Kao
Guest Editor

Manuscript Submission Information

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Keywords

  • nanowires
  • nanoparticles
  • quantum dots
  • nanotransistors
  • nanophotonics devices
  • nanomemory devices
  • nanogenerators
  • nanotubes and nanorods
  • nanoscale sensors

Published Papers (1 paper)

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Research

9 pages, 2172 KiB  
Communication
Generation and Storage of Random Voltage Values via Ring Oscillators Comprising Feedback Field-Effect Transistors
by Jaemin Son, Juhee Jeon, Kyoungah Cho and Sangsig Kim
Nanomaterials 2024, 14(7), 562; https://doi.org/10.3390/nano14070562 - 23 Mar 2024
Viewed by 559
Abstract
In this study, we demonstrate the generation and storage of random voltage values using a ring oscillator consisting of feedback field-effect transistors (FBFETs). This innovative approach utilizes the logic-in-memory function of FBFETs to extract continuous output voltages from oscillatory cycles. The ring oscillator [...] Read more.
In this study, we demonstrate the generation and storage of random voltage values using a ring oscillator consisting of feedback field-effect transistors (FBFETs). This innovative approach utilizes the logic-in-memory function of FBFETs to extract continuous output voltages from oscillatory cycles. The ring oscillator exhibited uniform probability distributions of 51.6% for logic 0 and 48.4% for logic 1. The generation of analog voltages provides binary random variables that are stored for over 5000 s. This demonstrates the potential of the ring oscillator in advanced physical functions and true random number generator technologies. Full article
(This article belongs to the Special Issue Nanostructured Electronic Components and Devices)
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