Nitrides and Carbides MEMS/NEMS
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "A：Physics".
Deadline for manuscript submissions: closed (10 May 2022) | Viewed by 5052
Special Issue Editors
Interests: GaN MEMS; micro and nanoresonators; force sensors; near-field probes; THz MEMS
2. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USA
Interests: MEMS; micromachined instruments; Gallium Nitride; phase change materials; multi-functional devices
Special Issue Information
Dear Colleagues,
While silicon has reached an unprecedented maturity in most MEMS communities, the use of nitrides and carbides has attracted a growing amount of interest due both to its ability to encourage better performance and also to its utility when exploring new transducer concepts and addressing challenges related to harsh environments. Moreover, with the ramp-up of electronic devices and opto-electronic applications, SiC and Ga, Al, In, and N are now available on various and large substrates. This is related to epitaxial growth advances that provide planar heterostructures as well as nanowires, which in turn are unlocking MEMS and NEMS device research. At the same time, LPCVD, PECVD, and ALD enable polycrystalline carbide and nitride integration in various devices processed on silicon substrates. Gaining maturity for carbide/nitride micronanosystems in order to replace or extend silicon in harsh environments is currently stimulating long-term research. In this issue, many aspects related to the specificities of these new materials and sensor design using these emerging materials will be covered:
- Development of GaN, SiC, and innovative carbonitride materials for MEMS applications;
- Epitaxial techniques (MOCVD, MBE), atomic layer deposition, LPCVD and PECVD;
- Novel integration and fabrication strategies leading to carbide and nitride MEMS;
- Technological research on resonators and time–frequency devices (SAWs, BAWs, RF acoustic resonators);
- Piezo-resistive and piezo-transistor devices integrated on MEMS;
- Electromechanical transduction in nitride or carbide epitaxial structures;
- Nano-piezotronics for sensing or energy harvesting in group III nitride nanowires;
- Optical transductions for probes or MOEMS based on nitrides;
- Harsh conditions nitride/carbide MEMS demonstrations: high temperature, high radiation, and/or harsh chemical environments.
Dr. Marc Faucher
Prof. Dr. Mina Rais-Zadeh
Guest Editors
Manuscript Submission Information
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Keywords
- GaN, AlN, and SiC inertial MEMS
- Nitrides and carbide flow and pressure sensors
- Nitrides and carbide gas sensors
- (Al,Ga, In, N) nanowires, piezotronics
- Epitaxial SAW, BAW, and time–frequency devices
- Piezoelectric and/or semiconducting nitrides in sensors or transducers
- GaN or SiC as structural MEMS materials (monocrystalline or polycrystalline)
- Nitrides and carbides integrated in silicon MEMS
- MEMS, NEMS, and electronic device co-integration
