Inorganic-Nanocrystal-Based Light-Emitting Diodes

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".

Deadline for manuscript submissions: closed (25 July 2023) | Viewed by 1180

Special Issue Editor


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Guest Editor
State Key Lab of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
Interests: fabrication of inorganic nanocrystals (including quantum dots, magnetic nanoparticles) and their applications in light-emitting diodes

Special Issue Information

Dear Colleagues,

Light-emitting diodes for solid-state lighting and displays have been regarded as a promising alternative to incandescent lamps due to their superior efficiency and luminescence. In particular, inorganic-nanocrystal-based light-emitting diodes have generated substantial interest due to their high color purity, high quantum efficiency, and low energy consumption, and the performance of devices developed with these diodes has been significantly improved through the optimization of nanocrystal engineering and device architecture. For example, an external quantum efficiency of over 20% has been obtained for all-inorganic quantum dots and perovskite-nanocrystal-based light-emitting diodes. However, several challenges remain, including problems with material safety, long-term stability, the higher efficiencies of blue-light-emitting diodes, and large-scale production, which must be addressed for their future commercialization. Accordingly, this Special Issue seeks to showcase research papers and review articles focused on the novel synthesis, characterization, and processing of inorganic nanocrystals, nanocrystals’ properties, and the application of inorganic nanocrystals in light-emitting diodes with advanced performance. 

We look forward to receiving your submissions!

Prof. Dr. Wanwan Li
Guest Editor

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Keywords

  • light-emitting diodes
  • quantum dots
  • perovskite nanocrystals
  • inorganic nanocrystals
  • optical nanostructures
  • optoelectronics

Published Papers (1 paper)

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Research

0 pages, 3147 KiB  
Article
Improved Optical Efficiency of 850-nm Infrared Light-Emitting Diode with Reflective Transparent Structure
by Hyung-Joo Lee, Jin-Young Park, Lee-Ku Kwac and Jongsu Lee
Micromachines 2023, 14(8), 1586; https://doi.org/10.3390/mi14081586 - 12 Aug 2023
Cited by 2 | Viewed by 952 | Correction
Abstract
This study investigated a reflective transparent structure to improve the optical efficiency of 850 nm infrared light-emitting diodes (IR-LEDs), by effectively enhancing the number of extracted photons emitted from the active region. The reflective transparent structure was fabricated by combining transparent epitaxial and [...] Read more.
This study investigated a reflective transparent structure to improve the optical efficiency of 850 nm infrared light-emitting diodes (IR-LEDs), by effectively enhancing the number of extracted photons emitted from the active region. The reflective transparent structure was fabricated by combining transparent epitaxial and reflective bonding structures. The transparent epitaxial structure was grown by the liquid-phase epitaxy method, which efficiently extracted photons emitted from the active area in IR-LEDs, both in the vertical and horizontal directions. Furthermore, a reflective bonding structure was fabricated using an omnidirectional reflector and a eutectic metal, which efficiently reflected the photons emitted downwards from the active area in an upward direction. To evaluate reflective transparent IR-LED efficiency, a conventional absorbing substrate infrared light-emitting diode (AS IR-LED) and a transparent substrate infrared light-emitting diode (TS IR-LED) were fabricated, and their characteristics were analyzed. Based on the power–current (L-I) evaluation results, the output power (212 mW) of the 850 nm IR-LED with the reflective transparent structure increased by 76% and 26%, relative to those of the AS IR-LED (121 mW) and TS IR-LED (169 mW), respectively. Furthermore, the reflective transparent structure possesses both transparent and reflective properties, as confirmed by photometric and radial theta measurements. Therefore, light photons emitted from the active area of the 850 nm IR-LED were efficiently extracted upward and sideways, because of the reflective transparent structure. Full article
(This article belongs to the Special Issue Inorganic-Nanocrystal-Based Light-Emitting Diodes)
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