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Insulated Gate Bipolar Transistor (IGBT) Modules
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Insulated Gate Bipolar Transistor (IGBT) Modules

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "A：Physics".

Deadline for manuscript submissions: 30 June 2024 | Viewed by 6654

Special Issue Editor

Dr. Peisheng Liu

E-Mail Website
Guest Editor
Jiangsu Key Laboratory of ASIC Design, School of Information Science and Technology, Nantong University, Nantong 226019, China
Interests: integrated circuit packaging; power devices; reliability analysis; micro and nano devices

Special Issue Information

Dear Colleagues,

With the rapid development of social progress and productivity, the insulated gate bipolar transistor (IGBT), as a new electronic power device, is a composite fully controlled voltage-driven power body device composed of a bipolar junction transistor (BJT) and metal–oxide–semiconductor field-effect transistor (MOSFET). It is also widely used in many high-power applications, such as wind turbines, high-speed trains, electric vehicles and ships, and is a leader in the development of power semiconductor devices due to its fast switching speed, low on-state voltage and good stability in smart grids and high-voltage DC transmission. The reliability of IGBT modules is also a hot topic of research in the packaging industry. Long periods of high temperature operation can lead to increased failure and reduced reliability of power devices, and the failure of devices in areas with very low fault tolerance can cause irreversible results. The study of the reliability of IGBT modules, on the one hand, extend the life of the modules and, on the other hand, to some extent consolidate the development of power device reliability technology and accelerate research and innovation on IGBT power devices. Accordingly, this Special Issue seeks to showcase research papers, communications and review articles that focus on the effects of damage to IGBT modules caused by failure at different locations of the module and suggestions for related improvements. Other related power device articles are also welcome for submission.

Dr. Peisheng Liu
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • IGBT module
  • integrated circuit packaging
  • power devices
  • reliability analysis

Published Papers (6 papers)

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Research

15 pages, 5298 KiB  
Article
Online Recognition of Fallen-Off Bond Wires in IGBT Modules
by Zhen Hu, Man Cui and Tao Shi
Micromachines 2024, 15(3), 404; https://doi.org/10.3390/mi15030404 - 17 Mar 2024
Viewed by 630
Abstract
As a core component of power conversion systems, insulated gate bipolar transistor (IGBT) modules continually suffer from severe thermal damage caused by temperature swings and shear stress, resulting in fatigue failure. Bond wires falling off is one of the failure modes of IGBT [...] Read more.
As a core component of power conversion systems, insulated gate bipolar transistor (IGBT) modules continually suffer from severe thermal damage caused by temperature swings and shear stress, resulting in fatigue failure. Bond wires falling off is one of the failure modes of IGBT modules. Given that the number of fallen-off bond wires is a significant parameter to evaluate the health status of the IGBT modules, this paper proposes an online identification model to recognize the number of fallen-off bond wires during normal operation. Firstly, a database containing datum Vce,on−Tj−IC (collector–emitter on-state voltage Vce,on, chip junction temperature Tj, collector current IC) planes with different fallen-off bond wires is built based on an offline aging test. Secondly, a Foster network model and a special circuit are designed to measure the junction temperature Tj and the collector–emitter on-state voltage Vce,on, respectively. Thirdly, the feature points of the IGBT module represented by Vce,on, Tj, and IC are given to the database to recognize the number of fallen-off bond wires according to the position of the feature points in the datum plane. The experimental results show that the proposed method can determine the fallen-off bond wires under the operation condition. Full article
(This article belongs to the Special Issue Insulated Gate Bipolar Transistor (IGBT) Modules)
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16 pages, 1864 KiB  
Article
Real-Time Temperature Prediction of Power Devices Using an Improved Thermal Equivalent Circuit Model and Application in Power Electronics
by Zhen Hu, Man Cui and Xiaohua Wu
Micromachines 2024, 15(1), 63; https://doi.org/10.3390/mi15010063 - 28 Dec 2023
Viewed by 779
Abstract
As a core component of photovoltaic power generation systems, insulated gate bipolar transistor (IGBT) modules continually suffer from severe temperature swings due to complex operation conditions and various environmental conditions, resulting in fatigue failure. The junction temperature prediction guarantees that the IGBT module [...] Read more.
As a core component of photovoltaic power generation systems, insulated gate bipolar transistor (IGBT) modules continually suffer from severe temperature swings due to complex operation conditions and various environmental conditions, resulting in fatigue failure. The junction temperature prediction guarantees that the IGBT module operates within the safety threshold. The thermal equivalent circuit model is a common approach to predicting junction temperature. However, the model parameters are easily affected by the solder aging. An accurate temperature prediction by the model is impossible during service. This paper proposes an improved thermal equivalent circuit model that can remove the effect of solder aging. Firstly, the solder aging process is monitored in real-time based on the case temperatures. Secondly, the model parameters are corrected by the thermal impedance from chip to baseplate based on the linear thermal characteristic. The simulation and experimental results show that the proposed model can reduce the temperature prediction error by more than 90% under the same aging condition. The proposed method only depends on the case temperatures to correct the model parameters, which is more economical. In addition, the experimental and simulation analysis in this work can help students of power electronics courses have an in-depth knowledge of power devices’ mechanical structure, heat dissipation principles, temperature distribution, junction temperature monitoring, and so on. Full article
(This article belongs to the Special Issue Insulated Gate Bipolar Transistor (IGBT) Modules)
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20 pages, 11002 KiB  
Article
Active Thermal Control of IGBT Modules Based on Finite-Time Boundedness
by Zhen Hu, Xiaohua Wu and Man Cui
Micromachines 2023, 14(11), 2075; https://doi.org/10.3390/mi14112075 - 08 Nov 2023
Viewed by 733
Abstract
One of the most important causes of the failure of power electronic modules is thermal stress. Proper thermal management plays an important role in more reliable and cost-effective energy conversion. In this paper, we present an advanced active thermal control (ATC) strategy to [...] Read more.
One of the most important causes of the failure of power electronic modules is thermal stress. Proper thermal management plays an important role in more reliable and cost-effective energy conversion. In this paper, we present an advanced active thermal control (ATC) strategy to reduce a power device’s thermal stress amplitude during operation, with the aim of improving the reliability and lifetime of the conversion system. A state-space model based on a Foster-type thermal model is developed to achieve junction temperature estimation in real time. A feedback controller based on finite-time boundedness (FTB) is proposed to precisely regulate the temperature in order to reduce the thermal stress according to the temperature profile. The designed controller permits the precise control of the temperature and strongly reduces the thermal stress during fast transients in the power demand. Simulation and experimental results are provided to validate the effectiveness of the proposed method. Full article
(This article belongs to the Special Issue Insulated Gate Bipolar Transistor (IGBT) Modules)
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35 pages, 3020 KiB  
Article
Thermal Fatigue Effect on the Grain Groove Profile in the Case of Diffusion in Thin Polycrystalline Films of Power Electronic Devices
by Tayssir Hamieh, Ali Ibrahim and Zoubir Khatir
Micromachines 2023, 14(9), 1781; https://doi.org/10.3390/mi14091781 - 17 Sep 2023
Viewed by 915
Abstract
In a previous paper, we solved the partial differential equation of Mullins’ problem in the case of the evaporation–condensation in electronic devices and gave an exact solution relative to the geometric profile of the grain boundary grooving when materials are submitted to thermal [...] Read more.
In a previous paper, we solved the partial differential equation of Mullins’ problem in the case of the evaporation–condensation in electronic devices and gave an exact solution relative to the geometric profile of the grain boundary grooving when materials are submitted to thermal and mechanical solicitation and fatigue effect. In this new research, new modelling of the grain groove profile was proposed and new analytical expressions of the groove profile, the derivative and the groove depth were obtained in the case of diffusion in thin polycrystalline films by the resolution of the fourth differential equation formulated by Mullins that supposed y′2≪1. The obtained analytical solution gave more accurate information on the geometric characteristics of the groove that were necessary to study the depth and the width of the groove. These new findings will open a new way to study with more accuracy the problem of the evaporation–condensation combined to the diffusion phenomenon on the material surfaces with the help of the analytical solutions. Full article
(This article belongs to the Special Issue Insulated Gate Bipolar Transistor (IGBT) Modules)
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14 pages, 6224 KiB  
Article
Effect of Solder Layer Void Damage on the Temperature of IGBT Modules
by Pengpeng Xu, Peisheng Liu, Lei Yan and Zhao Zhang
Micromachines 2023, 14(7), 1344; https://doi.org/10.3390/mi14071344 - 30 Jun 2023
Cited by 1 | Viewed by 1315
Abstract
Solder layer void is one of the main failure causes of power semiconductor devices, which will seriously affect the reliability of the devices. In this study, a 3D model of IGBT (Insulated Gate Bipolar Transistor) packaging was built by DesignModeler. Based on ANSYS [...] Read more.
Solder layer void is one of the main failure causes of power semiconductor devices, which will seriously affect the reliability of the devices. In this study, a 3D model of IGBT (Insulated Gate Bipolar Transistor) packaging was built by DesignModeler. Based on ANSYS Workbench, the influence of void size, location, solder layer type, and thickness on the temperature distribution of the IGBT module was simulated. The results show that the larger the void radius, the higher the temperature of the IGBT module. The closer the void is to the center of the solder layer, the higher the temperature of the module. The void on the top corner of the solder layer had the greatest impact on the junction temperature of the IGBT module, and the shape of the void is also one of the factors that affect the temperature of the module. The denser the void distribution, the higher the temperature of the module. The temperature of the IGBT module was reduced from 62.656 °C to 59.697 °C by using nanosilver solder paste, and the overall heat dissipation performance of the module was improved by 5%. The temperature of the module increased linearly with the increase in solder layer thickness, and the temperature increased by 0.8 °C for every 0.025 mm increase in solder layer thickness. The simulation results have a guiding significance for improving the thermal stability of IGBT modules. Full article
(This article belongs to the Special Issue Insulated Gate Bipolar Transistor (IGBT) Modules)
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12 pages, 3873 KiB  
Article
Reliability Analysis of Flip-Chip Packaging GaN Chip with Nano-Silver Solder BUMP
by Lei Yan, Peisheng Liu, Pengpeng Xu, Lipeng Tan and Zhao Zhang
Micromachines 2023, 14(6), 1245; https://doi.org/10.3390/mi14061245 - 13 Jun 2023
Viewed by 1525
Abstract
Gallium nitride (GaN) power devices have many benefits, including high power density, small footprint, high operating voltage, and excellent power gain capability. However, in contrast to silicon carbide (SiC), its performance and reliability can be negatively impacted by its low thermal conductivity, which [...] Read more.
Gallium nitride (GaN) power devices have many benefits, including high power density, small footprint, high operating voltage, and excellent power gain capability. However, in contrast to silicon carbide (SiC), its performance and reliability can be negatively impacted by its low thermal conductivity, which can cause overheating. Hence, it is necessary to provide a reliable and workable thermal management model. In this paper, a model of a flip-chip packing (FCP) GaN chip was established, and it was assigned to the Ag sinter paste structure. The different solder bumps and under bump metallurgy (UBM) were considered. The results indicated that the FCP GaN chip with underfill was a promising method because it not only reduced the size of the package model but also reduced thermal stress. When the chip was in operation, the thermal stress was about 79 MPa, only 38.77% of the Ag sinter paste structure, lower than any of the GaN chip packaging methods currently in use. Moreover, the thermal condition of the module often has little to do with the material of the UBM. Additionally, nano-silver was found to be the most suitable bump material for FCP GaN chip. Temperature shock experiments were also conducted with different UBM materials when nano-silver was used as bump. It was found that Al as UBM is a more reliable option. Full article
(This article belongs to the Special Issue Insulated Gate Bipolar Transistor (IGBT) Modules)
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