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Micromachines
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3D Pixel Sensors and Detectors, Volume II
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3D Pixel Sensors and Detectors, Volume II

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "A：Physics".

Deadline for manuscript submissions: closed (15 November 2021) | Viewed by 4153

Special Issue Editors

Dr. Giulio Pellegrini

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Guest Editor
Centro Nacional de Microelectrónica (IMB-CNM, CSIC), Instituto de Microelectrónica de Barcelona, 08193 Barcelona, Spain
Interests: wide bandgap semiconductors; radiation detectors; dosimetry and microdosimetry; FLASH therapy; harsh environments
Special Issues, Collections and Topics in MDPI journals
Dr. Ivan Vila

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Guest Editor
Instituto de Física de Cantabria (IFCA), CSIC-Universidad de Cantabria, 39005 Santander, Spain
Interests: CMS; pixel detectors; timing detectors; HEP; semicondactor physics
Special Issues, Collections and Topics in MDPI journals
Dr. Gregor Kramberger

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Guest Editor
Department of Experimental Particle Physics, Jožef Stefan Institute and Department of Physics, University of Ljubljana, SI-1001 Ljubljana, Slovenia
Interests: radiation detection; semiconductor physics; neutron irradiation; HEP
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

In order to increase the radiation hardness of silicon radiation detectors, sensors with a three-dimensional array of electrodes that penetrate into the detector bulk were proposed by S. Parker et al. in 1999. The advantage of this geometry is to set the maximum drift and depletion distance by the electrode spacing rather than by the detector thickness as in the more conventional planar technology. The advantages of this structure include short collection distances, fast collection times, and low depletion voltages, depending on the electrode diameter and pitch chosen.

The success of this geometry obtained by combining VLSI and micro-electromechanical systems (MEMS) technologies was clear when they were selected for the innermost layer of the ATLAS IBL experiment. The detectors were produced matching the pixel readout electronic geometry and have been in use since 2014 in CERN experiments.

Different applications have benefited from advancements in 3D detector technologies. For instance, new microdosimeters that can measure the linear energy transfer (LET) of ionizing particles at cellular levels were developed recently at CNM-IMB. At the same time, highly efficient neutron detectors with trenches or 3D detectors made in diamond were also developed by several research groups around the world.

Dr. Giulio Pellegrini
Dr. Ivan Vila
Dr. Gregor Kramberger
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Radiation hard sensors for HEP
  • Timing detectors, HEP or medical
  • Dosimetry (medical and space)
  • Neutron detectors
  • Diamond detectors

Published Papers (2 papers)

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Research

10 pages, 886 KiB  
Article
Timing Performance Simulation for 3D 4H-SiC Detector
by Yuhang Tan, Tao Yang, Kai Liu, Congcong Wang, Xiyuan Zhang, Mei Zhao, Xiaochuan Xia, Hongwei Liang, Ruiliang Xu, Yu Zhao, Xiaoshen Kang, Chenxi Fu, Weimin Song, Zhenzhong Zhang, Ruirui Fan, Xinbo Zou and Xin Shi
Micromachines 2022, 13(1), 46; https://doi.org/10.3390/mi13010046 - 28 Dec 2021
Cited by 5 | Viewed by 1939
Abstract
To meet the high radiation challenge for detectors in future high-energy physics, a novel 3D 4H-SiC detector was investigated. Three-dimensional 4H-SiC detectors could potentially operate in a harsh radiation and room-temperature environment because of its high thermal conductivity and high atomic displacement threshold [...] Read more.
To meet the high radiation challenge for detectors in future high-energy physics, a novel 3D 4H-SiC detector was investigated. Three-dimensional 4H-SiC detectors could potentially operate in a harsh radiation and room-temperature environment because of its high thermal conductivity and high atomic displacement threshold energy. Its 3D structure, which decouples the thickness and the distance between electrodes, further improves the timing performance and the radiation hardness of the detector. We developed a simulation software—RASER (RAdiation SEmiconductoR)—to simulate the time resolution of planar and 3D 4H-SiC detectors with different parameters and structures, and the reliability of the software was verified by comparing the simulated and measured time-resolution results of the same detector. The rough time resolution of the 3D 4H-SiC detector was estimated, and the simulation parameters could be used as guideline to 3D 4H-SiC detector design and optimization. Full article
(This article belongs to the Special Issue 3D Pixel Sensors and Detectors, Volume II)
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9 pages, 2274 KiB  
Article
Radiation Hardness Property of Ultra-Fast 3D-Trench Electrode Silicon Detector on N-Type Substrate
by Manwen Liu, Xinqing Li, Wenzheng Cheng, Zheng Li and Zhihua Li
Micromachines 2021, 12(11), 1400; https://doi.org/10.3390/mi12111400 - 14 Nov 2021
Cited by 2 | Viewed by 1650
Abstract
The radiation fluence of high luminosity LHC (HL-LHC) is predicted up to 1 × 1016 1 MeV neq/cm2 in the ATLAS and CMS experiments for the pixel detectors at the innermost layers. The increased radiation leads to the degradation [...] Read more.
The radiation fluence of high luminosity LHC (HL-LHC) is predicted up to 1 × 1016 1 MeV neq/cm2 in the ATLAS and CMS experiments for the pixel detectors at the innermost layers. The increased radiation leads to the degradation of the detector properties, such as increased leakage current and full depletion voltage, and reduced signals and charge collection efficiency, which means it is necessary to develop the radiation hard semiconductor devices for very high luminosity colliders. In our previous study about ultra-fast 3D-trench electrode silicon detectors, through induced transient current simulation with different minimum ionizing particle (MIP) hitting positions, the ultra-fast response times ranging from 30 ps to 140 ps were verified. In this work, the full depletion voltage, breakdown voltage, leakage current, capacitance, weighting field and MIP induced transient current (signal) of the detector after radiation at different fluences will be simulated and calculated with professional software, namely the finite-element Technology Computer-Aided Design (TCAD) software frameworks. From analysis of the simulation results, one can predict the performance of the detector in heavy radiation environment. The fabrication of pixel detectors will be carried out in CMOS process platform of IMECAS based on ultra-pure high resistivity (up to 104 ohm·cm) silicon material. Full article
(This article belongs to the Special Issue 3D Pixel Sensors and Detectors, Volume II)
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