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Micromachines
Special Issues
Solid-State Quantum Materials and Device Systems
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Solid-State Quantum Materials and Device Systems

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".

Deadline for manuscript submissions: closed (30 January 2023) | Viewed by 2887

Special Issue Editors

Dr. Yong Xie

E-Mail Website
Guest Editor
School of Advanced Materials and Nanotechnology & Key Laboratory on Wide-Gap Semiconductor Technology, Xidian University, Xi’an 710071, China
Interests: quantum materials; optoelectronics; two-dimensional materials; wide-bandgap semiconductors
Special Issues, Collections and Topics in MDPI journals
Dr. Yanan Wang

E-Mail Website
Guest Editor
College of Engineering, Electrical & Computer Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588, USA
Interests: quantum photonics; quantum phononics; two-dimensional materials; wide-bandgap semiconductors
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Remarkable advances in material science and nanotechnology over the past two decades have made it possible to create and control quantum phenomena in solid-state platforms. Various physical implementations of artificial atoms have been developed, such as silicon quantum dots, color centers in diamonds, and superconducting junctions, demonstrating functionalities in quantum-based computing, sensing, and communication that are currently unachievable using conventional technologies. With potential applications in large-scale manufacture and integration, these solid-state material systems have emerged as leading candidates for practical quantum applications.

This Special Issue seeks to showcase research papers, communications, and review articles that focus on the theoretical and experimental advances in solid-state quantum materials and device Systems, including, but not limited to, the following topics: semiconducting quantum dots (e.g., silicon, germanium, and gallium arsenide), localized excitons in two-dimensional (2D) transition metal dichalcogenides (TMDCs), defect-related color centers in wide-bandgap materials (e.g., diamond, silicon carbide, and hexagonal boron nitride), topological materials, and superconducting junctions. First-principle predictions, materials synthesis and characterization, device fabrication and measurements, quantum manufacture and integration, quantum state control, and quantum applications based on solid-state materials and device systems are all considered part of the scope of this Special Issue.

Dr. Yong Xie
Dr. Yanan Wang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • quantum materials
  • quantum devices
  • quantum dots
  • color centers
  • defect centers
  • localized excitons
  • two-dimensional materials
  • wide-bandgap semiconductors
  • topological materials
  • superconducting junctions

Published Papers (2 papers)

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Research

13 pages, 3138 KiB  
Article
Power Enhancement of 265 nm DUV-LED Flip-Chip by HVPE-AlN High-Temperature Annealing
by Wenkai Yue, Ruixuan Liu, Peixian Li, Xiaowei Zhou, Yang Liu, Bo Yang, Yingxiao Liu and Xiaowei Wang
Micromachines 2023, 14(2), 467; https://doi.org/10.3390/mi14020467 - 17 Feb 2023
Cited by 5 | Viewed by 1409
Abstract
In this paper, the X-ray diffraction full width at half the maximum (XRD FWHM) of a 3.5 µm-thick hydride vapor phase epitaxy-aluminum nitride (HVPE-AlN) (002) face after high-temperature annealing was reduced to 129 arcsec. The tensile strain in the HVPE-AlN samples gradually released [...] Read more.
In this paper, the X-ray diffraction full width at half the maximum (XRD FWHM) of a 3.5 µm-thick hydride vapor phase epitaxy-aluminum nitride (HVPE-AlN) (002) face after high-temperature annealing was reduced to 129 arcsec. The tensile strain in the HVPE-AlN samples gradually released with the increasing annealing temperature. When the annealing temperature exceeded 1700 °C, an aluminum oxynitride (AlON) region was generated at the contact interface between HVPE-AlN and sapphire, and the AlON structure was observed to conform to the characteristics of Al5O6N by high-resolution transmission electron microscopy (HRTEM). A 265 nm light-emitting diode (LED) based on an HVPE-AlN template annealed at 1700 °C achieved a light output power (LOP) of 4.48 mW at 50 mA, which was approximately 57% greater than that of the original sample. Full article
(This article belongs to the Special Issue Solid-State Quantum Materials and Device Systems)
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10 pages, 2080 KiB  
Article
Ground-State Structure of Quaternary Alloys (SiC)1−x (AlN)x and (SiC)1−x (GaN)x
by Abdelkader Menad, Mohamed Ferhat and Ali Zaoui
Micromachines 2023, 14(2), 250; https://doi.org/10.3390/mi14020250 - 19 Jan 2023
Viewed by 1083
Abstract
Despite III-nitride and silicon carbide being the materials of choice for a wide range of applications, theoretical studies on their quaternary alloys are limited. Here, we report a systematic computational study on the electronic structural properties of (SiC)x (AlN)1−x and [...] Read more.
Despite III-nitride and silicon carbide being the materials of choice for a wide range of applications, theoretical studies on their quaternary alloys are limited. Here, we report a systematic computational study on the electronic structural properties of (SiC)x (AlN)1−x and (SiC)x (AlN)1−x quaternary alloys, based on state-of-the-art first-principles evolutionary algorithms. Trigonal (SiCAlN, space group P3m1) and orthorhombic (SiCGaN, space group Pmn21) crystal phases were as predicted for x = 0.5. SiCAlN showed relatively weak thermodynamic instability, while that of SiCGaN was slightly elevated, rendering them both dynamically and mechanically stable at ambient pressure. Our calculations revealed that the Pm31 crystal has high elastic constants, (C11~458 GPa and C33~447 GPa), a large bulk modulus (B0~210 GPa), and large Young’s modulus (E~364 GPa), and our results suggest that SiCAlN is potentially a hard material, with a Vickers hardness of 21 GPa. Accurate electronic structures of SiCAlN and SiCGaN were calculated using the Tran–Blaha modified Becke–Johnson semi-local exchange potential. Specifically, we found evidence that SiCGaN has a very wide direct bandgap of 3.80 eV, while that of SiCAlN was indirect at 4.6 eV. Finally, for the quaternary alloys, a relatively large optical bandgap bowing of ~3 eV was found for SiCGaN, and a strong optical bandgap bowing of 0.9 eV was found for SiCAlN. Full article
(This article belongs to the Special Issue Solid-State Quantum Materials and Device Systems)
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