Modeling and Analyses in Advanced Materials

A special issue of Mathematics (ISSN 2227-7390). This special issue belongs to the section "Engineering Mathematics".

Deadline for manuscript submissions: 30 September 2024 | Viewed by 543

Special Issue Editors


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Guest Editor
Department of Mathematics, Shanghai University, Shanghai 200444, China
Interests: partial differential equations; modeling in materials science; parabolic/elliptic systems; finite element method; computational fluid dynamics and its applications

E-Mail Website
Guest Editor
Department of Mathematics, Shanghai University, Shanghai 200444, China
Interests: partial differential equations; modeling in materials science; parabolic/elliptic systems; finite element method; computational fluid dynamics and its applications

Special Issue Information

Dear Colleagues,

Advanced materials, such as shape memory alloys, superconductors, and graphene, are not so simple that they can be understood and controlled without abstraction. Hence, mathematical modeling plays an important role in the investigations of these materials. The models may be at the nano- micro- meso- or macro-scale, and the corresponding methods used include first principle, density functional theory, phase-field, and sharp-interface approaches. Moreover, many real materials involve several scales at the same time; thus, multi-scale modeling is necessary.

Due to the complexity of these models, analytical solutions are generally not available; thus, mathematical analysis and numerical simulations are employed to examine their validity and numerical efficiency. This is how we describe the processes they model. Simulations based on these models can be also applied to design new materials, such as in material genome initiatives.

This Special Issue is intended to represent a collection of scientific articles concerned with the modeling of advanced materials and the theoretical analysis and various applications of those employed by material scientists.    

Prof. Dr. Peicheng Zhu
Dr. Xiaoxue Qin
Guest Editors

Manuscript Submission Information

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Keywords

  • mathematical modeling
  • simulation/numerical analysis
  • theoretical analysis
  • validity of models
  • phase-field models
  • sharp interface models
  • materials genome initiative
  • advanced materials

Published Papers (1 paper)

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Research

35 pages, 8023 KiB  
Article
Influence of Homo- and Hetero-Junctions on the Propagation Characteristics of Love Waves in a Piezoelectric Semiconductor Semi-Infinite Medium
by Xiao Guo, Yilin Wang, Chunyu Xu, Zibo Wei and Chenxi Ding
Mathematics 2024, 12(7), 1075; https://doi.org/10.3390/math12071075 - 02 Apr 2024
Viewed by 420
Abstract
With the fast development and miniaturization of acoustic and electric smart devices, micro and nanoscale piezoelectric semiconductor materials are gradually being used to manufacture information communication, energy conversion, and nondestructive testing technologies. As the core components of the above piezoelectric semiconductor devices, homo- [...] Read more.
With the fast development and miniaturization of acoustic and electric smart devices, micro and nanoscale piezoelectric semiconductor materials are gradually being used to manufacture information communication, energy conversion, and nondestructive testing technologies. As the core components of the above piezoelectric semiconductor devices, homo- and hetero-junctions have an evident influence on the propagation performance of high-frequency and short-wavelength elastic waves inside the bulk piezoelectric semiconductor materials. Based on the Gurtin–Murdoch theory, a theoretical model of interface effect originating from homo- and hetero-junctions is established to investigate the propagation properties of Love waves in a piezoelectric semiconductor semi-infinite medium considering the electrical open circuit (insulation) and short circuit (metalized ground) surface boundary conditions and biasing electric fields. Four interface characteristic lengths are introduced to describe the electrical imperfect interface of homo- and hetero-junctions, which are legitimately confirmed through comparisons of the dispersion and attenuation curves of Love waves. The influence of homo- and hetero-junctions on the dispersion and attenuation characteristics of Love waves are elaborated in detail. Numerical results show that the interface characteristic lengths are independent of the electrical surface boundary conditions, acceptor and donor concentrations, thickness of the upper piezoelectric semiconductor layer, and biasing electric fields in the piezoelectric semiconductor semi-infinite medium. Moreover, the propagation characteristics of Love waves can be manipulated by changing the biasing electric field parallel to the homo- and hetero-junctions. Since the high-frequency and short-wavelength Love wave is an important class of surface acoustic waves propagating in micro- and nano-scale piezoelectric semiconductor materials, the establishment of mathematical models and the revelation of physical mechanisms are fundamental to the analysis and optimization of the above piezoelectric semiconductor devices. Full article
(This article belongs to the Special Issue Modeling and Analyses in Advanced Materials)
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