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Magnetochemistry
Special Issues
Spin Crossover Materials: Towards Applications in Devices
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Spin Crossover Materials: Towards Applications in Devices

A special issue of Magnetochemistry (ISSN 2312-7481). This special issue belongs to the section "Spin Crossover and Spintronics".

Deadline for manuscript submissions: closed (30 September 2021) | Viewed by 7847

Special Issue Editor

Dr. Lorenzo Poggini

E-Mail Website
Guest Editor
Consiglio Nazionale delle Ricerche – CNR, Istituto di Chimica dei Composti OrganoMetallici – ICCOM, Area di Ricerca di Firenze via Madonna del Piano 10, 50019 Sesto Fiorentino (Firenze), Italy
Interests: molecular magnetism; surface science; spintronic; molecular electronics

Special Issue Information

Dear Colleagues,

This Special Issue, entitled “Spin Crossover Materials: Toward Applications in Devices”, aims to illustrate the current relevance of a focused topic, based on spin crossover materials, which is in turn highly versatile. The spin crossover phenomenon, which was discovered almost a century ago, still attracts plenty of attention from researchers from various disciplines and is moving toward fascinating materials. In this context, spin crossover materials embedded in devices have emerged at the intersection between molecular junctions and magnetic-based molecules devices, resulting in a very exciting class of multifunctional materials. Thanks to their intrinsic properties, spin-crossover-based devices can appear with a large range of potential technological applications for spintronics, data storage, and sensing devices.

This Special Issue of Magnetochemistry aims at publishing new research, illustrating recent achievements in spin crossover materials.

Dr. Lorenzo Poggini
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Magnetochemistry is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2700 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • spin crossover
  • spin crossover on surface
  • transport measurements
  • SCO junctions
  • hybrid device
  • SCO-based molecular spintronics

Published Papers (2 papers)

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Research

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8 pages, 1049 KiB  
Article
Investigation of a Tetrathiafulvalene-Based Fe2+ Thermal Spin Crossover Assembled on Gold Surface
by Niccolò Giaconi, Andrea Luigi Sorrentino, Lorenzo Poggini, Giulia Serrano, Giuseppe Cucinotta, Edwige Otero, Danilo Longo, Haiet Douib, Fabrice Pointillart, Andrea Caneschi, Roberta Sessoli and Matteo Mannini
Magnetochemistry 2022, 8(2), 14; https://doi.org/10.3390/magnetochemistry8020014 - 21 Jan 2022
Cited by 3 | Viewed by 3172
Abstract
A thick film and a monolayer of tetrathiafulvalene-based Fe2+ spin-crossover complex have been deposited by solution on a Au (111) substrate, attempting both self-assembling monolayer protocol and a simpler drop-casting procedure. The thermally induced spin transition has been investigated using X-ray photoelectron [...] Read more.
A thick film and a monolayer of tetrathiafulvalene-based Fe2+ spin-crossover complex have been deposited by solution on a Au (111) substrate, attempting both self-assembling monolayer protocol and a simpler drop-casting procedure. The thermally induced spin transition has been investigated using X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS). Temperature-dependent investigations demonstrated the retention of the switching behavior between the two spin states in thick molecular films obtained by drop-casting, while in the monolayer sample, the loss of the spin-crossover properties appears as a possible consequence of the strong interaction between the sulfur atoms of the ligand and the gold substrate. Full article
(This article belongs to the Special Issue Spin Crossover Materials: Towards Applications in Devices)
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Review

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20 pages, 2552 KiB  
Review
Nonvolatile Voltage Controlled Molecular Spin-State Switching for Memory Applications
by Thilini K. Ekanayaka, Guanhua Hao, Aaron Mosey, Ashley S. Dale, Xuanyuan Jiang, Andrew J. Yost, Keshab R. Sapkota, George T. Wang, Jian Zhang, Alpha T. N’Diaye, Andrew Marshall, Ruihua Cheng, Azad Naeemi, Xiaoshan Xu and Peter A. Dowben
Magnetochemistry 2021, 7(3), 37; https://doi.org/10.3390/magnetochemistry7030037 - 11 Mar 2021
Cited by 29 | Viewed by 3839
Abstract
Nonvolatile, molecular multiferroic devices have now been demonstrated, but it is worth giving some consideration to the issue of whether such devices could be a competitive alternative for solid-state nonvolatile memory. For the Fe (II) spin crossover complex [Fe{H2B(pz)2} [...] Read more.
Nonvolatile, molecular multiferroic devices have now been demonstrated, but it is worth giving some consideration to the issue of whether such devices could be a competitive alternative for solid-state nonvolatile memory. For the Fe (II) spin crossover complex [Fe{H2B(pz)2}2(bipy)], where pz = tris(pyrazol-1-yl)-borohydride and bipy = 2,2′-bipyridine, voltage-controlled isothermal changes in the electronic structure and spin state have been demonstrated and are accompanied by changes in conductance. Higher conductance is seen with [Fe{H2B(pz)2}2(bipy)] in the high spin state, while lower conductance occurs for the low spin state. Plausibly, there is the potential here for low-cost molecular solid-state memory because the essential molecular thin films are easily fabricated. However, successful device fabrication does not mean a device that has a practical value. Here, we discuss the progress and challenges yet facing the fabrication of molecular multiferroic devices, which could be considered competitive to silicon. Full article
(This article belongs to the Special Issue Spin Crossover Materials: Towards Applications in Devices)
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