Spin-Orbitronic Devices and Integrated Applications

A special issue of Magnetochemistry (ISSN 2312-7481). This special issue belongs to the section "Spin Crossover and Spintronics".

Deadline for manuscript submissions: closed (31 August 2022) | Viewed by 416

Special Issue Editor

Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Interests: non-volatile memory; CMOS hybrid devices; integration & applications; spintronic device physics and integrated applications; neuromorphic computing devices and integration; high-performance edge computing chip and system
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Special Issue Information

Dear Colleagues,

At present, the unprecedented boom of data manipulation is pushing information-processing devices forward with the prerequisite nature of the simultaneous high-speed operation and ultra-low energy consumption. The recently developed spin-orbit torque (SOT)-induced magnetization switching paradigm has been fueling opportunities for spin-orbitronic devices enabled with new electrical control of magnets via spin-orbit interaction under sub-nanosecond and sub-picojoule regimes.

This Special Issue aims to further the momentum of both fundamental research and integrated applications of spin-orbitronic devices. The enrichment topics to be covered include (but are not limited to): (1) Cutting-edge SOT memory in CMOS-compatible and scalable methodologies for field-free magnetization switching. (2) The scientific and technological development of spin-orbitronics towards emerging applications; (3) Extensive research of spin-orbitronic device modeling, process integration, and the interdisciplinary spintronic fields engaged in silicon circuits. (4) Investigations of futuristic spintronic materials and devices —spin-orbit logic, magnonics, topotronics, skyrmionics etc.

Prof. Dr. Guozhong Xing
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Magnetochemistry is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2700 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • magnetic anisotropy
  • spin-orbit coupling
  • spin Hall effect
  • Dzyaloshinskii–Moriya interaction
  • spin-transfer torque
  • spin-orbit torque
  • magneto-electric coupling
  • electronic band structure
  • magnetic domain wall
  • skyrmions
  • spin wave
  • magnetotransport
  • ferromagnetic resonance
  • magnetodynamics
  • thin-film heterostructures
  • magnetic tunnel junctions
  • spin valve
  • magnetoresistive random-access memory
  • magnetic sensors
  • non-volatile memory
  • spin-orbitronic devices and applications
  • spin-orbitronic in-memory computing
  • spintronic neuromorphic computing
  • magnonic circuits

Published Papers

There is no accepted submissions to this special issue at this moment.
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