New Insights in Wide-Bandgap Devices: Modeling and Application
A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Power Electronics".
Deadline for manuscript submissions: closed (15 November 2023) | Viewed by 1815
Special Issue Editors
Interests: wide-bandgap devices driving and modeling; electric vehicle technologies; distributed generation
Special Issue Information
Dear Colleagues,
The penetration of wide-bandgap (WBG) devices, such as silicon carbide and gallium nitride, is increasing in the industry due to their superiorities of reduced switching loss, lower reverse recovery current, and higher operation temperature. It enables power converters to operate under higher switching frequencies which can significantly increase the power density.
The application of WBG devices also poses challenges for the power converter design. The increases in electromagnetic interference (EMI) noise raise stability concerns, while the high switching frequency requires improved control strategies. Both the industry and academia have dedicated much effort into developing novel solutions for the application of WBG devices.
This research topic aims to collate state-of-the-art efforts in developing power converters with WBG devices. All efforts including high-quality original research and review articles in this field that help to improve the power density of converters are welcome in this research topic. Potential topics of interest include, but are not limited to, the following:
- The modeling of WBG devices;
- The application of artificial intelligence in the power converter modeling and control;
- The packaging of the wide-bandgap semiconductor devices;
- Advanced gate driving technologies for WBG devices;
- Novel high-switching-frequency converter topologies;
- Control strategies of high-frequency power converter;
- The application of WBG devices in distributed generation and transportation electrification;
- Reliability issue of the power conversion system with WBG devices.
Technical Program Committee Members:
1. Dr. Yuheng Wu, John Deere Inc., 4101 19th Ave. N., Fargo, ND, USA
2. Dr. Zhao Yuan, Apple Inc., One Apple Park Way Cupertino, CA, USA
Prof. Dr. Shuang Zhao
Dr. Yuqi Wei
Guest Editors
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Keywords
- wide-bandgap device
- power converter
- semiconductor device modeling
- electric vehicle
- renewable energy
- control
- gate driver
- silicon carbide
- gallium nitride
