Synaptic Devices and Artificial Neurons for Neuromorphic Computation

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".

Deadline for manuscript submissions: closed (1 September 2022) | Viewed by 2643

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Dear Colleagues,

Using neuron and synapses-mimetic devices, neuromorphic computation combines memory with computing in the same unit and thus has much higher efficiency in processing complex information than the current von Neumann architecture-based computers. The neuromorphic hardware systems can be divided into deep neural networks (DNNs) and spiking neural networks (SNNs). The DNN system involves artificial synaptic devices with multilevel modulated conductance being adjusted to desired values in the backpropagation training, which serve as the synaptic weights. During information processing, the input vector from the presynaptic neuron array is multiplied by the whole synaptic weight matrix while transferring the signals to the post-synaptic neuron array. To achieve high accuracy, the synaptic device in DNNs should have a linear conductance variation with more than 100 states. In contrast, an SNN system behaves more like the human brain by using spike signaling and learning algorithms such as spike-timing-dependent plasticity (STDP) for unsupervised learning, and hence it requires synaptic devices with STDP characteristics, which have been less studied than their counterpart in DNNs. In addition to artificial synapses, quality devices with integrate-and-fire characteristics to simulate biological neurons are also required in both DNNs and SNNs, even though the number of artificial neurons are much less than that of synapses. Such an artificial neuron integrates input currents through synapses and fires spikes to the next synaptic layer if the integrated effect from the input currents exceeds a threshold value, which is decided by the particular material property.

There has been a huge interest in developing non-Si based two- or three-terminal devices as artificial neurons and synapses. Various materials and devices such as memristors or resistive memory, phase change memory, electrochemical transistors, ferroelectric transistors, and charge trapping transistors have been studied as artificial synaptic devices, while phase change materials, ferroelectric materials, and others have also been evaluated as artificial neurons. It is expected that these non-Si based artificial synapses and neurons will eventually be integrated into more compact DNN or SNN systems for efficient neuromorphic computing.

The aim of this special Issue is to report the recent advances in novel material-based artificial synaptic or neuron devices. We are confident that the publication of such a Special Issue will stimulate the curiosity of researchers to explore novel materials and structures to further advance the progress in this promising field and eventually put forward their practical applications in artificial intelligence.

It is our pleasure to invite you to submit a manuscript reporting new materials and structures, fundamental mechanisms, novel device concepts, device performances, as well as other related topics for this Special Issue. Full papers, communications, and reviews are all welcome.

Prof. Dr. Zhaoyang Fan
Guest Editor

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Keywords

  • neuromorphic computing hardware
  • artificial synapses
  • artificial neurons
  • synaptic devices
  • artificial neuron networks

Published Papers (1 paper)

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10 pages, 3074 KiB  
Article
Voltage Pulse Driven VO2 Volatile Resistive Transition Devices as Leaky Integrate-and-Fire Artificial Neurons
by Zhen Xu, Ayrton A. Bernussi and Zhaoyang Fan
Electronics 2022, 11(4), 516; https://doi.org/10.3390/electronics11040516 - 09 Feb 2022
Cited by 4 | Viewed by 2003
Abstract
In a hardware-based neuromorphic computation system, using emerging nonvolatile memory devices as artificial synapses, which have an inelastic memory characteristic, has attracted considerable interest. In contrast, the elastic artificial neurons have received much less attention. An ideal material system that is suitable for [...] Read more.
In a hardware-based neuromorphic computation system, using emerging nonvolatile memory devices as artificial synapses, which have an inelastic memory characteristic, has attracted considerable interest. In contrast, the elastic artificial neurons have received much less attention. An ideal material system that is suitable for mimicking biological neurons is the one with volatile (or mono-stable) resistive change property. Vanadium dioxide (VO2) is a well-known material that exhibits an abrupt and volatile insulator-to-metal transition property. In this work, we experimentally demonstrate that pulse-driven two-terminal VO2 devices behave in a leaky integrate-and-fire (LIF) manner, and they elastically relax back to their initial value after firing, thus, mimicking the behavior of biological neurons. The VO2 device with a channel length of 20 µm can be driven to fire by a single long-duration pulse (>83 µs) or multiple short-duration pulses. We further model the VO2 devices as resistive networks based on their granular domain structure, with resistivities corresponding to the insulator or metallic states. Simulation results confirm that the volatile resistive transition under voltage pulse driving is caused by the formation of a metallic filament in an avalanche-like process, while this volatile metallic filament will relax back to the insulating state at the end of driving pulses. The simulation offers a microscopic view of the dynamic and abrupt filament formation process to explain the experimentally observed LIF behavior. These results suggest that VO2 insulator–metal transition could be exploited for artificial neurons. Full article
(This article belongs to the Special Issue Synaptic Devices and Artificial Neurons for Neuromorphic Computation)
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