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Gallium Nitride HEMTs: Characterization, Modeling and Design Techniques for Microwave...
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Gallium Nitride HEMTs: Characterization, Modeling and Design Techniques for Microwave and Millimeter-Wave Applications

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Microwave and Wireless Communications".

Deadline for manuscript submissions: closed (1 April 2022) | Viewed by 17533

Special Issue Editors

Dr. Sergio Colangeli

E-Mail Website
Guest Editor
Department of Electronics Engineering, University of Roma Tor Vergata, Via del Politecnico 1, 00133 Roma, Italy
Interests: characterization and modeling of microwave field-effect transistors; low-noise amplifier design; stability analysis of microwave circuits
Dr. Walter Ciccognani

E-Mail Website
Guest Editor
Department of Electronics Engineering, University of Roma Tor Vergata, Via del Politecnico 1, 00133 Roma, Italy
Interests: linear microwave circuit design methodologies; linear and noise analysis/measurement techniques; small-signal and noise modeling of microwave active devices
Prof. Dr. Ernesto Limiti

E-Mail Website
Guest Editor
Department of Electronic Engineering, University of Roma Tor Vergata, 00133 Roma, Italy
Interests: active and passive microwave and millimeter-wave devices; antennas and wave propagations; electromagnetic systems; MMIC passive components; amplifiers; nonlinear microwave circuits
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Thirty years after being proposed as a revolutionary technology, gallium nitride-based high electron-mobility transistors are today a well-established reality. Thanks to the superior properties of the material, such as wide bandgap and high electron mobility, HEMTs have been fabricated with a record performance as to breakdown voltages, current densities, and thermal resistances.

On this basis, GaN HEMTs are increasingly attractive in analog front-end circuits capable of delivering, handling, and withstanding remarkable power levels, i.e., high-power amplifiers, switches, and highly survivable low-noise amplifiers. On top of that, all of these key functions can be integrated on what are becoming known as Single-Chip Front Ends. The applications affected by this paradigm shift range from radar to radio communications, in both the commercial and military spheres, and at frequencies which easily reach the V-band. In addition to the terrestrial and air-borne segments, recent years have also seen the first space qualifications of several GaN HEMT processes both by US and European foundries, which testifies to the full maturity of the underlying technology.

The present Special Issue aims at collecting original contributions and reviews reporting the state-of-the-art of gallium nitride HEMT technology, with particular focus on characterization and modeling methods, but also including fabrication and circuit design techniques.

Dr. Sergio Colangeli
Dr. Walter Ciccognani
Prof. Dr. Ernesto Limiti
Guest Editor

Manuscript Submission Information

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Gallium nitride
  • Characterization
  • Modeling
  • MMIC
  • HEMT
  • Microwaves
  • Millimeter-waves

Published Papers (6 papers)

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Research

10 pages, 4397 KiB  
Article
Improvement of Small Signal Equivalent Simulations for Power and Efficiency Matching of GaN HEMTs
by Roberto Quaglia
Electronics 2021, 10(3), 263; https://doi.org/10.3390/electronics10030263 - 22 Jan 2021
Cited by 4 | Viewed by 1755
Abstract
In high-frequency power-amplifier design, it is common practice to approach the design of reactive matching networks using linear simulators and targeting a reflection loss limit (referenced to the target impedance). It is well known that this is only a first-pass design technique, since [...] Read more.
In high-frequency power-amplifier design, it is common practice to approach the design of reactive matching networks using linear simulators and targeting a reflection loss limit (referenced to the target impedance). It is well known that this is only a first-pass design technique, since output power or efficiency contours do not correspond to mismatch circles. This paper presents a method to improve the accuracy of this approach in the case of matching network design for power amplifiers based on gallium nitride (GaN) technology. Equivalent mismatch circles, which lay within the power or efficiency contours targeted by the design, are analytically obtained thanks to geometrical considerations. A summary table providing the parameters to use for typical contours is provided. The technique is demonstrated on two examples of power-amplifier design on the 6–12 GHz band using the non-linear large-signal model of a GaN High Electron Mobility Transistor (HEMT). Full article
(This article belongs to the Special Issue Gallium Nitride HEMTs: Characterization, Modeling and Design Techniques for Microwave and Millimeter-Wave Applications)
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12 pages, 18567 KiB  
Article
GaN Power Amplifier Digital Predistortion by Multi-Objective Optimization for Maximum RF Output Power
by Mattia Mengozzi, Gian Piero Gibiino, Alberto M. Angelotti, Corrado Florian and Alberto Santarelli
Electronics 2021, 10(3), 244; https://doi.org/10.3390/electronics10030244 - 21 Jan 2021
Cited by 10 | Viewed by 3022
Abstract
While digital predistortion (DPD) usually targets only the linearity performance of the radio–frequency (RF) power amplifier (PA), this work addresses more than a single PA performance metric exploiting a multi-objective optimization approach. We present a predistorer learning procedure based on a constrained optimization [...] Read more.
While digital predistortion (DPD) usually targets only the linearity performance of the radio–frequency (RF) power amplifier (PA), this work addresses more than a single PA performance metric exploiting a multi-objective optimization approach. We present a predistorer learning procedure based on a constrained optimization algorithm that maximizes the RF output power, while guaranteeing a prescribed linearity level, i.e., a maximum normalized mean square error (NMSE) or adjacent-channel power ratio (ACPR). Experimental results on a Gallium Nitride (GaN) PA show that the proposed approach outperforms the classical indirect learning architecture (ILA), yet using the same predistorter structure with predetermined nonlinearity and memory orders. Full article
(This article belongs to the Special Issue Gallium Nitride HEMTs: Characterization, Modeling and Design Techniques for Microwave and Millimeter-Wave Applications)
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16 pages, 8658 KiB  
Article
Trapping Dynamics in GaN HEMTs for Millimeter-Wave Applications: Measurement-Based Characterization and Technology Comparison
by Alberto Maria Angelotti, Gian Piero Gibiino, Corrado Florian and Alberto Santarelli
Electronics 2021, 10(2), 137; https://doi.org/10.3390/electronics10020137 - 10 Jan 2021
Cited by 16 | Viewed by 4164
Abstract
Charge trapping effects represent a major challenge in the performance evaluation and the measurement-based compact modeling of modern short-gate-length (i.e., ≤0.15 μm) Gallium Nitride (GaN) high-electron mobility transistors (HEMT) technology for millimeter-wave applications. In this work, we propose a comprehensive experimental methodology based [...] Read more.
Charge trapping effects represent a major challenge in the performance evaluation and the measurement-based compact modeling of modern short-gate-length (i.e., ≤0.15 μm) Gallium Nitride (GaN) high-electron mobility transistors (HEMT) technology for millimeter-wave applications. In this work, we propose a comprehensive experimental methodology based on multi-bias large-signal transient measurements, useful to characterize charge-trapping dynamics in terms of both capture and release mechanisms across the whole device safe operating area (SOA). From this dataset, characterizations, such as static-IV, pulsed-IV, and trapping time constants, are seamlessly extracted, thus allowing for the separation of trapping and thermal phenomena and delivering a complete basis for measurement-based compact modeling. The approach is applied to different state-of-the-art GaN HEMT commercial technologies, providing a comparative analysis of the measured effects. Full article
(This article belongs to the Special Issue Gallium Nitride HEMTs: Characterization, Modeling and Design Techniques for Microwave and Millimeter-Wave Applications)
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16 pages, 4268 KiB  
Article
Linear Characterization and Modeling of GaN-on-Si HEMT Technologies with 100 nm and 60 nm Gate Lengths
by Sergio Colangeli, Walter Ciccognani, Patrick Ettore Longhi, Lorenzo Pace, Julien Poulain, Rémy Leblanc and Ernesto Limiti
Electronics 2021, 10(2), 134; https://doi.org/10.3390/electronics10020134 - 09 Jan 2021
Cited by 10 | Viewed by 2602
Abstract
Motivated by the growing interest towards low-cost, restriction-free MMIC processes suitable for multi-function, possibly space-qualified applications, this contribution reports the extraction of reliable linear models for two advanced GaN-on-Si HEMT technologies, namely OMMIC’s D01GH (100 nm gate length) and D006GH (60 nm gate [...] Read more.
Motivated by the growing interest towards low-cost, restriction-free MMIC processes suitable for multi-function, possibly space-qualified applications, this contribution reports the extraction of reliable linear models for two advanced GaN-on-Si HEMT technologies, namely OMMIC’s D01GH (100 nm gate length) and D006GH (60 nm gate length). This objective is pursued by means of both classical and more novel approaches. In particular, the latter include a nondestructive method for determining the extrinsic resistances and an optimizaion-based approach to extracting the remaining parasitic elements: these support standard DC and RF measurements in order to obtain a scalable, bias-dependent equivalent-circuit model capturing the small-signal behavior of the two processes. As to the noise model, this is extracted by applying the well known noise-temperature approach to noise figure measurements performed in two different frequency ranges: a lower band, where a standard Y-factor test bench is used, and an upper band, where a custom cold-source test bench is set up and described in great detail. At 5 V drain-source voltage, minimum noise figures as low as 1.5 dB and 1.1 dB at 40 GHz have been extracted for the considered 100 nm and 60 nm HEMTs, respectively: this testifies the maturity of both processes and the effectiveness of the gate length reduction. The characterization and modeling campaign, here presented for the first time, has been repeatedly validated by published designs, a couple of which are reviewed for the Reader’s convenience. Full article
(This article belongs to the Special Issue Gallium Nitride HEMTs: Characterization, Modeling and Design Techniques for Microwave and Millimeter-Wave Applications)
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15 pages, 6410 KiB  
Article
Systematical Study of the Basic Properties of Surface Acoustic Wave Devices Based on ZnO and GaN Multilayers
by Junyao Shen, Sulei Fu, Rongxuan Su, Huiping Xu, Fei Zeng, Cheng Song and Feng Pan
Electronics 2021, 10(1), 23; https://doi.org/10.3390/electronics10010023 - 25 Dec 2020
Cited by 14 | Viewed by 3076
Abstract
Recently, surface acoustic wave (SAW) devices based on layered structures are a popular area of research. Multilayered structures, including ZnO and GaN, have shown great performance and can be applied in diverse fields. Meanwhile, thin films, such as AlGaN and n-ZnO, can be [...] Read more.
Recently, surface acoustic wave (SAW) devices based on layered structures are a popular area of research. Multilayered structures, including ZnO and GaN, have shown great performance and can be applied in diverse fields. Meanwhile, thin films, such as AlGaN and n-ZnO, can be added to these structures to form a 2-D electron gas (2DEG) which makes the devices tunable. This work systematically studies the basic properties of SAW devices based on ZnO and GaN multilayers via COMSOL Multiphysics. The sorts of structures with different crystal orientations are simulated, and various acoustic modes are considered. Results show that a range of phase velocity from about 2700 m/s to 6500 m/s can be achieved, and devices based on ZnO and GaN multilayers can meet the requirements of the electromechanical coupling coefficient from about 0 to 7%. Every structure’s unique properties are valuable for diverse applications. For example, c-ZnO/c-GaN/c-sapphire structure can be used for high-frequency and large-bandwidth SAW devices, while SAW devices based on a-ZnO/a-GaN/r-sapphire and 2DEG are suitable for programmable SAW sensors. This work has great reference value for future research into SAW devices. Full article
(This article belongs to the Special Issue Gallium Nitride HEMTs: Characterization, Modeling and Design Techniques for Microwave and Millimeter-Wave Applications)
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9 pages, 1300 KiB  
Article
Application of Polarization Coulomb Field Scattering to a Physics-Based Compact Model for AlGaN/GaN HFETs with I–V Characteristics
by Yongxiong Yang, Yuanjie Lv, Zhaojun Lin, Guangyuan Jiang and Yang Liu
Electronics 2020, 9(10), 1719; https://doi.org/10.3390/electronics9101719 - 19 Oct 2020
Viewed by 1545
Abstract
A physics-based model for the output current–voltage (I–V) characteristics of AlGaN/GaN HFETs is developed based on AlGaAs/GaAs HFETs. It is demonstrated that Polarization Coulomb Field (PCF) scattering greatly influences channel electron mobility. With different gate biases, channel electron mobility is varied by PCF [...] Read more.
A physics-based model for the output current–voltage (I–V) characteristics of AlGaN/GaN HFETs is developed based on AlGaAs/GaAs HFETs. It is demonstrated that Polarization Coulomb Field (PCF) scattering greatly influences channel electron mobility. With different gate biases, channel electron mobility is varied by PCF scattering. Furthermore, a more negative gate bias and a lower ratio of lg/lsd (gate length/source-drain space) of the device causes the PCF scattering to have stronger influence on channel electron mobility. This work is the first to apply PCF scattering to a physics-based model for AlGaN/GaN HFETs with I–V characteristics and the results indicate that PCF scattering is essential for a physics-based model to identify I–V characteristics of AlGaN/GaN HFETs. Full article
(This article belongs to the Special Issue Gallium Nitride HEMTs: Characterization, Modeling and Design Techniques for Microwave and Millimeter-Wave Applications)
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