Memristor Devices: Models, Developments and Applications
A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Electronic Materials".
Deadline for manuscript submissions: closed (31 July 2023) | Viewed by 1886
Special Issue Editors
Interests: non-volatile memories; TCAD simulation; electrical characterization for reliability and security
Special Issues, Collections and Topics in MDPI journals
Interests: non-volatile memories; EEPROM; flash; MRAM; electrical characterization; modelization; reliability; security
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
Memristor devices are promising candidates for the next generations of non-volatile (NV) memories compared to traditional embedded NV-Flash and volatile SRAM technologies. Indeed, they generally offer high density, high scalability and high reliability also in addition to low cost and low power consumption. Moreover, memristor devices offer a wide range of possible applications, such as very dense memory arrays, neural networks and in-memory computing. This Special Issue is dedicated to these memristor devices and especially to their modelling, development and applications. The list of possible topics includes, but is not limited to:
- Emerging memristors, including ReRAM, MRAM, PCRAM, FeRAM and associated selectors, from the demonstration of novel device concepts to fully integrated memory arrays;
- Memristor architectures and process development from product prototyping to manufacturing-related challenges and solutions (integration schemes, novel circuit design schemes and novel memory architectures that enhance memory performance);
- Use and reliability of memristive devices for artificial intelligence and design architectures for in-memory and neuromorphic computing (neural networks);
- Memristor devices physics and theoretical approaches including analytical, numerical and statistical approaches applied to structures with dimensions ranging from atomistic over device dimensions to full-chip dimensions, including physics-based compact modeling;
- Security and radiation effects on memristor devices (measurements, simulation, modelling, etc.).
Dr. Jérémy Postel-Pellerin
Prof. Dr. Pierre Canet
Guest Editors
Manuscript Submission Information
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Keywords
- artificial intelligence
- in-memory and neuromorphic computing
- new architectures
- process development
- modelling
- security
- radiation effects
