Two-Dimensional Materials: Synthesis, Characterization and Device Applications

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: closed (15 May 2024) | Viewed by 2222

Special Issue Editors

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Guest Editor
Department of Mechanical Engineering, Union College, Schenectady, NY 12308, USA
Interests: two-dimensional material synthesis and related thin-film device development; thin-film electronic and electrochemical devices

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Guest Editor
School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 610054, China
Interests: synthesis and application of graphene; h-BN; graphene/h-BN heterostructure and other two-dimensional materials

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Guest Editor
Department of Electrical and Computer Engineering, Stony Brook University, Stony Brook, NY 11794, USA
Interests: molecular beam epitaxy of III-V semiconductor compounds; growth on lattice mismatched substrates; strained layer superlattices; carrier recombination and transport in semiconductor heterostructures; optoelectronic devices and integrated circuits
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Special Issue Information

Dear Colleagues,

The fast development and surges of new two-dimensional materials provide exciting opportunities. Two-dimensional materials have shown extraordinary performance in energy storage, sensing, data processing, and flexible devices. This performance, and that of devices fabricated with 2D materials, depends on the synthesis process used, nanoscale characterization, and advanced fabrication techniques. This Special Issue on recent advances in 2D materials focuses on the synthesis, characterization, and device applications. It will be devoted to publishing original research articles or communications on two-dimensional materials with aspects of novel synthetic strategies and post-treatment, nanoscale imaging, in situ characterization, and device applications.

The 2D materials of interest include, but are not limited to:

  • Graphene and its derivatives (graphene oxide, reduced graphene oxide, graphene quantum dot);
  • Two-dimensional nitrides, oxides, and carbides;
  • Transition metal dichalcogenides;
  • Xenes;
  • Two-dimensional Au, Ag Nanosheets.

Dr. Yijing Y. Stehle
Dr. Fangzhu Qing
Dr. Dmitri Donetski
Guest Editors

Manuscript Submission Information

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Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.


  • two-dimensional materials
  • synthesis
  • top-down
  • bottom-up
  • transistor
  • two-dimensional devices
  • nanofabrication
  • applications of 2D materials

Published Papers (1 paper)

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17 pages, 12553 KiB  
Metatungstate Chemical Vapor Deposition of WSe2: Substrate Effects, Shapes, and Morphologies
by Krastyo Buchkov, Peter Rafailov, Nikolay Minev, Vladimira Videva, Velichka Strijkova, Todor Lukanov, Dimitre Dimitrov and Vera Marinova
Crystals 2024, 14(2), 184; - 13 Feb 2024
Cited by 2 | Viewed by 1371
Owing to their exceptional properties, which are usually determined by the growth conditions, 2D transition metal dichalcogenides (TMDCs) offer numerous research directions for applications in the fields of spintronics, valleytronics, and optoelectronics. Here, we focus on the chemical vapor deposition (CVD) synthesis of [...] Read more.
Owing to their exceptional properties, which are usually determined by the growth conditions, 2D transition metal dichalcogenides (TMDCs) offer numerous research directions for applications in the fields of spintronics, valleytronics, and optoelectronics. Here, we focus on the chemical vapor deposition (CVD) synthesis of WSe2 (tungsten diselenide) nanoclusters/nanoflakes by using a liquid precursor for tungsten (ammonium metatungstate) on Si/SiO2, fused silica, and sapphire substrates. Various WSe2 clusters with different sizes, thicknesses, and geometries were analyzed by means of optical and atomic force microscopy (AFM) and Raman spectroscopy. The observed structures were mostly WSe2 multilayers; however, monolayer formations were also found. They showed significant morphological differences, as well as wide nucleation density and size variations, possibly related to precursor/substrate surface interactions under the same CVD synthesis conditions. The largest WSe2 domains with a lateral size of up to hundreds of micrometers were observed on sapphire, probably caused by a higher growth rate of singular nucleation sites. WSe2 domains with irregular and triangular shapes were simultaneously identified on fused silica, whereas multilayered pyramidal WSe2 structures dominated in the case of Si/SiO2 substrates. The application of polarized Raman spectroscopy to precisely determine and differentiate the characteristic vibrational modes (A1g, E2g, and 2LA(M)) enabled the unambiguous identification of 2D and/or multilayered WSe2 formations with a high crystallinity level. The presented comparative analysis of samples prepared in relatively simple synthesis conditions (moderate working temperatures and ambient pressure) provides a base for further progress of the facile metatungstate CVD method and relevant opportunities for the exploration of 2D TMDC materials. Full article
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