Special Issue "High Electron Mobility Transistor (HEMT) Devices and Applications"
Deadline for manuscript submissions: 31 March 2024 | Viewed by 1475
Interests: GaN; HEMTs; wide bandgap material; RF transistor; power electronics; transistor modeling
Interests: wide and ultrawide bandgap semiconductors; power electronics; optoelectronics; extreme-environment devices
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Special Issue in Electronics: GaN-Based Power Electronic Devices and Their Applications, 2nd Edition
Ever since the demonstration of the first high-electron mobility transistors (HEMTs) by Dr. Mimura in 1981, HEMTs have been developed rapidly and commercialized in different material systems for a myriad of applications. At the early development stage, AlGaAs/GaAs, GaAs/InGaAs, and InP-based HEMTs were widely implemented into high-speed electronics communication applications with excellent noise and power performance. The development of GaN HEMTs has opened the gate to more applications, such as power electronics, mm-wave frequency systems, biosensing, and radiation-hardened electronics. Recently, ultrawide bandgap materials such as AlGaN- and Ga2O3-based HEMTs have been introduced and demonstrated encouraging results. This Special Issue will cover innovative HEMT devices, applications based on HEMT technology, HEMT-related material research, including epitaxy growth, material characterization, and fabrication techniques, and HEMT simulation.
Dr. Weiyi Li
Prof. Dr. Houqiang Fu
Manuscript Submission Information
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- high-electron mobility transistors
- HEMT simulation
- HEMT applications
- HEMT heterostructure
- gallium nitride
- gallium arsenide
- indium phosphide
- ultrawide bandgap semiconductors