Special Issue "β-Ga2O3: Growth (Bulk, Thin Film, Epitaxy) and Physical Properties"
Deadline for manuscript submissions: 31 December 2023 | Viewed by 2575
Interests: bulk crystals growth; β-Ga2O3; floating zone method; epitaxial growth
Beta gallium oxide (β-Ga2O3) is an exciting wide-bandgap semiconductor with tremendous potential across various technological applications. Its unique properties make it highly suitable for power electronics, solar-blind UV detectors, sensor applications (such as explosives detection), and even as substrates for laser diodes. This Special Issue focuses on the growth aspects of β-Ga2O3, including bulk crystals, thin films as well as epitaxial layers with suitable processes. Melt growth techniques Czochralski, Bridgman, floating zone, edge-defined film-fed growth, and Veneuil can be used for bulk crystal growth. Many thin film preparation methods like pulsed laser deposition, spin coating, sputtering, e-beam evaporation, and sol–gel synthesis have been successfully reported. Epitaxial processes, including MOVPE, MBE, and Mist-CVD, have also shown promising results in the literature. The growth of beta gallium oxide (bulk, thin films, epitaxy) encounters many technological challenges and needs significant attention to be addressed for scientific or technical investigations in detail.
Moreover, the Special Issue aims to delve into optimizing the physical properties of β-Ga2O3 for diverse applications. This encompasses comprehensive investigations into the structural, optical, electrical, and spectroscopic properties of both pure and doped β-Ga2O3 materials. Understanding these properties is crucial for tailoring β-Ga2O3 to specific device structures and maximizing performance.
The scope of this Special Issue extends beyond conventional research boundaries, offering a platform to explore emerging trends in the growth of β-Ga2O3 and its physical properties. It encourages the submission of experimental studies, theoretical investigations, and innovative approaches that shed light on the fundamental principles underlying the growth processes and highlight the unique characteristics of β-Ga2O3. By bringing together cutting-edge research, this Special Issue aims to propel the field forward and inspire further advancements in the realm of β-Ga2O3-based technologies. The potential topics of interest include but are not limited to:
- Experimental aspects of β-Ga2O3 Bulk crystal growth;
- β-Ga2O3 thin film growth;
- Epitaxial growth of β-Ga2O3;
- Material and physical properties of β-Ga2O3 (bulk, thin film, epitaxy);
- Structural, optical, electrical, and spectroscopic properties of pure and doped β-Ga2O3;
- Device structures and role of physical properties of β-Ga2O3 (bulk, thin films, epitaxy).
Dr. Sridharan Moorthy Babu
Prof. Dr. Fan Ren
Manuscript Submission Information
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.
Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
- bulk crystal growth
- thin film growth
- epitaxy growth
- physical, structural, optical, electrical, spectroscopic properties
- wide-bandgap semiconductor
- power electronics
- solar-blind UV detectors
- sensor applications
- melt growth techniques
- Czochralski method
- Bridgman method
- floating zone method
- edge-defined film-fed growth method
- Veneuil method
The below list represents only planned manuscripts. Some of these manuscripts have not been received by the Editorial Office yet. Papers submitted to MDPI journals are subject to peer-review.
Title: Hydrogen Plasma Influence on Electrical Properties and Deep Traps Spectra of Various Polymorphs of Ga2O3
Authors: A.Y. Polyakov 1; E.B. Yakimov 1,2; V.I. Nikolaev 1,3,4; A.I. Pechnikov 1,3,4; A.V. Miakonkikh 5; A.Kuznetsov 6; A.Azarov 6; In-Hwan Lee 7; A.A.Vasilev 1; A.I. Kochkova 1; I.V. Shchemerov 1; S.J. Pearton 8
Affiliation: 1 National University of Science and Technology MISiS, Moscow, Leninsky pr. 4, Moscow 119049, Russia, Email: email@example.com 2 Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, 6 Academician Ossipyan str., Chernogolovka, Moscow Region 142432, Russia 3 Perfect Crystals LLC, 38k1 Toreza Avenue, off.213, Saint Petersburg, 194223, Russia 4 Ioffe Institute, 26 Politekhnicheskaya, Saint Petersburg, 194021, Russia 5 Valiev Institute of Physics and Technology, Russian Academy of Sciences (Valiev IPT RAS), Moscow, 117218, Nahimovsky Ave, 36(1), Russia 6Department of Physics/ Centre for Materials Science and Nanotechnology, University of Oslo, Problemveien 7, 0315 Oslo, Norway 7 Department of Materials Science and Engineering, Korea University, Anamro 145, Seoul 02841, Republic of Korea 8 Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
Title: Orientation Dependence of thermal properties of bulk Ga2O3
Authors: Stephen J. Pearton
Affiliation: Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32606 USA