Special Issue "Advanced Optoelectronic Crystals and Devices: Designing and Characterization"

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Materials for Energy Applications".

Deadline for manuscript submissions: 29 February 2024 | Viewed by 1968

Special Issue Editors

Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences, Changchun 130033, China
Interests: tunable laser; DFB laser; grating coupled laser
Special Issues, Collections and Topics in MDPI journals
Dr. Cheng Qiu
E-Mail Website
Guest Editor
Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences, Changchun 130033, China
Interests: tunable lasers; photonic inverse design method; optical neural networks; SUSY and non-hermitian in laser system
Dr. Peng Jia
E-Mail Website
Guest Editor
Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences, Changchun 130033, China
Interests: high power; narrow linewidth; semiconductor laser
Dr. Yue Song
E-Mail Website
Guest Editor
Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences, Changchun 130033, China
Interests: semiconductor laser; degradation mechanism; surface-emitting distributed feedback

Special Issue Information

Dear Colleagues,

Optoelectronic devices are essential and form many fundamental components in modern optic systems. Their broadly covered applications include data center interconnection, fiber optical telecommunication, coherent detection and ranging, etc. Boosted by advancing nano-fabrication technology, ever-increasing computational power and revolutionary data-driven algorithms, this research field is now in a very favorable position as it steps into the next phase of its evolution.

In this Special Issue, we invite the community to submit breakthrough results or comprehensive reviews of  progressively advancing optoelectronic devices’ design and characterization with respect to the fields including, but not limited to:  novel materials, simulation and design methods, crystalline material characteristics and test solutions and novel device structures and applications.

Dr. Yongyi Chen
Dr. Cheng Qiu
Dr. Peng Jia
Dr. Yue Song
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nano-fabrication technology
  • crystalline material characteristic
  • data-driven photonic inverse design method
  • novel OE materials
  • perovskite photoelectric devices
  • quantum dot photoelectric devices
  • graphene photoelectric devices
  • organic photoelectric devices

Published Papers (3 papers)

Order results
Result details
Select all
Export citation of selected articles as:

Research

9 pages, 3378 KiB  
Article
Single-Chip Switchable Dual-Wavelength Vertical External-Cavity Surface-Emitting Laser
Crystals 2023, 13(10), 1520; https://doi.org/10.3390/cryst13101520 - 19 Oct 2023
Viewed by 545
Abstract
Dual-wavelength output devices have a wide range of applications in mid-infrared band difference frequency generation, anti-interference lidar, dual-wavelength holographic interferometry, and other applications. Vertical external cavity surface-emitting lasers (VECSELs) are a type of semiconductor laser that can achieve single-chip dual-wavelength output by designing [...] Read more.
Dual-wavelength output devices have a wide range of applications in mid-infrared band difference frequency generation, anti-interference lidar, dual-wavelength holographic interferometry, and other applications. Vertical external cavity surface-emitting lasers (VECSELs) are a type of semiconductor laser that can achieve single-chip dual-wavelength output by designing the chip structure. In this paper, we present a single-chip VECSEL that can switch between dual-wavelength and single-wavelength output modes. The VECSEL can simultaneously emit coaxial laser beams at 967 nm and 1013 nm, with a wavelength spacing of about 45 nm. The degree of mismatch between the gain peaks of the two quantum wells in the gain chip and the corresponding cavity modes is different. By adjusting the pump power, the temperature of the active region can be changed, which alters the matching relationship between the gain peaks and the cavity modes and controls the output mode of the VECSEL. The dual-wavelength output mode maintains a stable wavelength spacing at different operating temperatures. The laser output mode can be switched between single-wavelength and dual-wavelength, and the beam divergence angle is less than 8°. The dual-wavelength output power can exceed 400 mW, and the long-wavelength output power can reach up to 700 mW. Full article
Show Figures

Figure 1

16 pages, 6945 KiB  
Article
Calibration Technique for MBE Growth of Long Wavelength InAlAs/InGaAs Quantum Cascade Lasers
Crystals 2023, 13(9), 1341; https://doi.org/10.3390/cryst13091341 - 02 Sep 2023
Viewed by 394
Abstract
In this paper, we present the methodology for precise calibration of the Molecular Beam Epitaxy (MBE) growth process and achieving run-to-run stability of growth parameters. We present the analysis of the influence of fluxes stability during the growth of long wavelength quantum cascade [...] Read more.
In this paper, we present the methodology for precise calibration of the Molecular Beam Epitaxy (MBE) growth process and achieving run-to-run stability of growth parameters. We present the analysis of the influence of fluxes stability during the growth of long wavelength quantum cascade laser structures designed for the range λ ~ 12–16 µm on wavelength accuracy with respect to desired emission wavelength. The active region of the lasers has a complex structure of nanometer thickness InxGa1−xAs/InyAl1−yAs superlattice. As a consequence, the compositional and thickness control of the structure via bulk growth parameters is rather difficult. To deal with this problem, we employ a methodology based on double-superlattice test structures that precede the growth of the actual structures. The test structures are analyzed by High Resolution X-ray Diffraction, which allows calibration of the growth of the complex active region of quantum cascade laser structures. We also theoretically studied the effect of individual flux changes on the emission wavelength and gain parameters of the laser. The results of simulations allow for the determination of flux stability tolerance, preserving acceptable parameters of the laser and providing means of emission wavelength control. The proposed methodology was verified by the growth of laser structures for emission at around 13.5 μm. Full article
Show Figures

Figure 1

12 pages, 3181 KiB  
Article
Annealing Stability of NiO/Ga2O3 Vertical Heterojunction Rectifiers
Crystals 2023, 13(8), 1174; https://doi.org/10.3390/cryst13081174 - 28 Jul 2023
Cited by 1 | Viewed by 820
Abstract
The stability of vertical geometry NiO/Ga2O3 rectifiers during two types of annealing were examined, namely (1) the annealing of NiO only, prior to the deposition of the Ni/Au metal anode stack, and (2) the annealing of the completed device. The [...] Read more.
The stability of vertical geometry NiO/Ga2O3 rectifiers during two types of annealing were examined, namely (1) the annealing of NiO only, prior to the deposition of the Ni/Au metal anode stack, and (2) the annealing of the completed device. The devices were annealed in oxygen for 1 min at a temperature of up to 500 °C. The results show that annealing at 300 °C can lead to the best performance for both types of devices in terms of maximizing the breakdown voltage and on–off ratio, lowering the forward turn-on voltage, reducing the reverse leakage current, and maintaining the on resistance. The surface morphology remains smooth for 300 °C anneals, and the NiO exhibits a bandgap of 3.84 eV with an almost unity Ni2O3/NiO composition. Full article
Show Figures

Figure 1

Back to TopTop