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Advanced Ferroelectric Materials and Films: Properties and Applications for Post...
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Advanced Ferroelectric Materials and Films: Properties and Applications for Post Moorish Era

A special issue of Coatings (ISSN 2079-6412). This special issue belongs to the section "Thin Films".

Deadline for manuscript submissions: closed (31 December 2023) | Viewed by 10182

Special Issue Editors

Dr. Yongguang Xiao

E-Mail Website
Guest Editor
School of Material Sciences and Engineering, Xiangtan University, Xiangtan 411105, China
Interests: ferroelectric thin films; hafnium oxide; FeFET; negative capacitance; irradiation effect
Prof. Dr. Minghua Tang

E-Mail Website
Guest Editor
School of Material Sciences and Engineering, Xiangtan University, Xiangtan 411105, China
Interests: multiferroic composite; magnetoelectric effect; ferromagnetic-ferroelectric tunneling junctions; multiferroic tunnel junctions

Special Issue Information

Dear Colleagues,

High-performance ferroelectric materials are a kind of functional material with wide application prospects. From the current research status, the research, development, and application of high-performance ferroelectric materials are still in the development stage. Researchers choose different ferroelectric materials for research and constantly explore their preparation process, but so far, the research on some properties of ferroelectric materials has not reached a satisfactory level. For example, the types of ceramic powders and polymers used to prepare ferroelectric composites are still very singular, the theoretical research on their composite interface has just begun, and the research on the fatigue resistance of ferroelectric memory devices needs to be developed. In short, ferroelectric materials are a kind of important functional material with broad development prospects. The research and application of their characteristics still need our continuous research, exploration, and attention, especially in the application of ferroelectric materials in microelectronic components in the post-molar era.

This Special Issue aims to highlight the latest progress and application of ferroelectric material science and technology from the aspects of new materials, new structures, and new principles, covering a wide range of fields from theory and modeling, preparation, and characterization to new applications through the combination of original research papers and review articles from leading groups around the world.

Dr. Yongguang Xiao
Prof. Dr. Minghua Tang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Coatings is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • ferroelectric thin films
  • hafnium oxide
  • memory devices
  • logic devices
  • integration of storage and calculation
  • ultra-low power consumption

Published Papers (6 papers)

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Editorial

Jump to: Research

4 pages, 188 KiB  
Editorial
Functional Ferroic Materials, Films and Devices
by Pengfei Guan and Ming Zheng
Coatings 2022, 12(8), 1110; https://doi.org/10.3390/coatings12081110 - 04 Aug 2022
Cited by 1 | Viewed by 1116
Abstract
Ferroic materials (e [...] Full article
(This article belongs to the Special Issue Advanced Ferroelectric Materials and Films: Properties and Applications for Post Moorish Era)

Research

Jump to: Editorial

8 pages, 1218 KiB  
Communication
Modeling of Ionizing Radiation Effects for Negative Capacitance Field-Effect Transistors
by Yongguang Xiao, Xianghua Da, Haize Cao, Ke Xiong, Gang Li and Minghua Tang
Coatings 2023, 13(4), 798; https://doi.org/10.3390/coatings13040798 - 20 Apr 2023
Cited by 1 | Viewed by 999
Abstract
A theoretical model for simulating ionizing radiation effects on negative capacitance field-effect transistors (NCFETs) with a metal–ferroelectric–insulator–semiconductor (MFIS) structure was established. Based on the model, the effects of total ionizing dose (TID) and dose rate on the surface potential, ferroelectric capacitance, voltage amplification [...] Read more.
A theoretical model for simulating ionizing radiation effects on negative capacitance field-effect transistors (NCFETs) with a metal–ferroelectric–insulator–semiconductor (MFIS) structure was established. Based on the model, the effects of total ionizing dose (TID) and dose rate on the surface potential, ferroelectric capacitance, voltage amplification factor, and transfer characteristics of NCFETs were investigated. The simulation results demonstrated that, with the increase in total dose, the curves of surface potential versus gate voltage and driving current versus gate voltage shift left significantly, resulting in the point of voltage amplification shifting left. Meanwhile, with the increase in dose rate, the amplitude of both the surface potential and driving current decreases slightly. Meanwhile, the derived result indicated that relatively thin ferroelectric thickness can effectively reduce the effect of TID. It is expected that this model can be helpful for analyzing the radiation effects of NCFETs. Full article
(This article belongs to the Special Issue Advanced Ferroelectric Materials and Films: Properties and Applications for Post Moorish Era)
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10 pages, 4448 KiB  
Article
Improvement of Ferroelectricity in Ce-Doped Hf0.5Zr0.5O2 Thin Films
by Yong-Guang Xiao, Si-Wei Liu, Li-Sha Yang, Yong Jiang, Ke Xiong, Gang Li, Jun Ouyang and Ming-Hua Tang
Coatings 2022, 12(11), 1766; https://doi.org/10.3390/coatings12111766 - 18 Nov 2022
Cited by 4 | Viewed by 1978
Abstract
At present, ion doping is a popular method typically used to regulate the ferroelectric properties of Hf0.5Zr0.5O2 films. In this work, Ce (cerium)–doped Hf0.5Zr0.5O2 (Ce: HZO) films on Pt/TiN/SiO2/Si substrates were [...] Read more.
At present, ion doping is a popular method typically used to regulate the ferroelectric properties of Hf0.5Zr0.5O2 films. In this work, Ce (cerium)–doped Hf0.5Zr0.5O2 (Ce: HZO) films on Pt/TiN/SiO2/Si substrates were prepared by the chemical solution deposition (CSD) method. The microstructure and ferroelectric properties of the Ce–doped HZO films were investigated in detail. The experimental results showed that the remanent polarization value of the films with cerium doping concentration of 7 mol% reached 17 μC/cm2, which is a significant improvement compared with the undoped Hf0.5Zr0.5O2 films. The reason for this may be the introduction of cerium ions, which can introduce a certain number of oxygen vacancies, thus stabilizing the formation of the orthogonal phase. Interestingly, the films were shown to be nearly fatigue free after 109 cycles of testing. These results demonstrate that cerium ion doping is an effective method for stabilizing the formation of the orthogonal phase of HZO films, and improving the ferroelectricity of HZO thin films. Full article
(This article belongs to the Special Issue Advanced Ferroelectric Materials and Films: Properties and Applications for Post Moorish Era)
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9 pages, 1855 KiB  
Article
Combined Raman Spectroscopy and Magneto-Transport Measurements in Disordered Graphene: Correlating Raman D Band and Weak Localization Features
by Isaac Childres, Yaping Qi, Mohammad A. Sadi, John F. Ribeiro, Helin Cao and Yong P. Chen
Coatings 2022, 12(8), 1137; https://doi.org/10.3390/coatings12081137 - 07 Aug 2022
Cited by 1 | Viewed by 2214
Abstract
Although previous studies have reported the Raman and weak localization properties of graphene separately, very few studies have examined the correlation between the Raman and weak localization characterizations of graphene. Here, we report a Raman spectroscopy and low-magnetic-field electronic transport study of graphene [...] Read more.
Although previous studies have reported the Raman and weak localization properties of graphene separately, very few studies have examined the correlation between the Raman and weak localization characterizations of graphene. Here, we report a Raman spectroscopy and low-magnetic-field electronic transport study of graphene devices with a controlled amount of defects introduced into the graphene by exposure to electron-beam irradiation and oxygen plasma etching. The relationship between the defect correlation length (LD), calculated from the Raman “D” peak, and the characteristic scattering lengths, Lϕ, Li and L*, computed from the weak localization effects measured in magneto-transport was investigated. Furthermore, the effect on the mean free path length due to the increasing amounts of irradiation incident on the graphene device was examined. Both parameters—including LD and Lϕ—decreased with the increase of irradiation, which was shown to be related to the increase of disorder through the concomitant decrease in the mean free path length, l. Although these are similar trends that have been observed separately in previous reports, this work revealed a novel nonlinear relationship between LD and Lϕ, particularly at lower levels of disorder. These findings are valuable for understanding the correlation between disorder in graphene and the phase coherence and scattering lengths of its charge carriers. Full article
(This article belongs to the Special Issue Advanced Ferroelectric Materials and Films: Properties and Applications for Post Moorish Era)
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9 pages, 1817 KiB  
Article
Electric-Field-Tunable Transport and Photo-Resistance Properties in LaMnO3−x/PMN-PT Heterostructures
by Hao Ni, Yi Wang, Feng Zhang, Jinwei Yang, Meng Wang, Xin Guo, Lu Chen, Shengnan Wang and Ming Zheng
Coatings 2022, 12(7), 890; https://doi.org/10.3390/coatings12070890 - 23 Jun 2022
Cited by 1 | Viewed by 1448
Abstract
Multiferroic heterojunctions are promising for application in low-power storage and spintronics due to their magnetoelectric coupling properties. Controlling the magnetic and transport properties of magnetic materials by external stimuli and then realizing advanced devices constitute the key mission in this field. We fabricated [...] Read more.
Multiferroic heterojunctions are promising for application in low-power storage and spintronics due to their magnetoelectric coupling properties. Controlling the magnetic and transport properties of magnetic materials by external stimuli and then realizing advanced devices constitute the key mission in this field. We fabricated a multiferroic heterostructure consisting of a ferroelectric single-crystal (001)-0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 substrate and an epitaxial 40 nm LaMnO3−x film. By applying dc electric fields to the ferroelectric substrate, the resistance and the photo-resistance of the LaMnO3−x film could be significantly modulated. With the electric field increasing from 0 to +4.8 kV/cm, the photo-resistance increased by ~4.1% at room temperature. The curve of photo-resistance versus the cycling electric field has a butterfly shape due to the piezoelectric strain effect. Using in situ X-ray diffraction measurements, the linear relationship of the strain and the electric field was quantitatively studied. Full article
(This article belongs to the Special Issue Advanced Ferroelectric Materials and Films: Properties and Applications for Post Moorish Era)
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10 pages, 3428 KiB  
Article
Electro-Assisted 3D Printing Multi-Layer PVDF/CaCl2 Composite Films and Sensors
by Andong Wang, Jianhua Liu, Chenkang Shao, Youming Zhang and Caifeng Chen
Coatings 2022, 12(6), 820; https://doi.org/10.3390/coatings12060820 - 11 Jun 2022
Cited by 8 | Viewed by 1835
Abstract
Polyvinylidene fluoride (PVDF) films are widely used in sensors for their wide response frequency, good flexibility, low acoustic impedance, and chemical stability. In this work, PVDF/CaCl2 piezoelectric films were prepared by an electro-assisted 3D printing method and used to form a multi-layer [...] Read more.
Polyvinylidene fluoride (PVDF) films are widely used in sensors for their wide response frequency, good flexibility, low acoustic impedance, and chemical stability. In this work, PVDF/CaCl2 piezoelectric films were prepared by an electro-assisted 3D printing method and used to form a multi-layer composite film sensor. The study found that the addition of CaCl2 can effectively increase the β-phase content in the PVDF film and improve the piezoelectric and dielectric properties of the PVDF composite film sensors. When the content of CaCl2 is 0.15 wt.%, the β-phase content of the PVDF/CaCl2 composite film can reach the highest value of up to 48.47%, and the output voltage response of the sensor is 0.62 V at an input frequency of 10 Hz, 10 V voltage. The output voltage of PVDF composite film sensor with two and three layers is 1.306 and 1.693 times that of a single layer, respectively. The sensitivity of the multi-layer sensors has also been greatly improved. Full article
(This article belongs to the Special Issue Advanced Ferroelectric Materials and Films: Properties and Applications for Post Moorish Era)
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