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Chemical Vapor Deposition (CVD) of Coatings and Films
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Chemical Vapor Deposition (CVD) of Coatings and Films

A special issue of Coatings (ISSN 2079-6412). This special issue belongs to the section "Surface Characterization, Deposition and Modification".

Deadline for manuscript submissions: closed (31 December 2023) | Viewed by 10856

Special Issue Editors

Prof. Dr. Igor K. Igumenov

E-Mail Website
Guest Editor
Nikolaev Institute of Inorganic Chemistry, Siberian Branch Russian Academy of Sciences, 63090 Novosibirsk, Russia
Interests: thin-film deposition; CVD; material characteristics; nanomaterials
Dr. Vladimir Lukashov

E-Mail Website
Guest Editor
S.S. Kutateladze Institute of Thermophysics, 63090 Novosibirsk, Russia
Interests: processes of heat and mass transfer in a reacting boundary layer flow

Special Issue Information

Dear Colleagues,

We are pleased to invite you to present the results of your research on CVD films and coatings to the general public. The relevance of the work on the development of CVD technologies is obvious. Ultimately, these activities are aimed at improving the quality of life and rational use of natural resources.

A wide range of phenomena make CVD an extremely interesting scientific problem integrating a variety of research areas. The analysis of the results of careful experimental or numerical observations and the search for new concepts that can give unexpected solutions and bring diversity to existing theoretical models is impossible without a dynamic free exchange of opinions. The Special Issue format proposed by MDPI has every reason to become such a tool.

In this Special Issue, original research articles and reviews are welcome. Research areas may include (but are not limited to) the following:

  • Experimental research and numerical analysis of coating deposition processes.
  • Structured and composite coatings including laser texturing or nanoparticles doping.
  • Properties and morphology of functional films and coatings.
  • New approaches to reaction area design.

We look forward to receiving your contributions.

Prof. Dr. Igor K. Igumenov
Dr. Vladimir Lukashov
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Coatings is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • CVD processes
  • morphology and properties of coatings
  • nano-structured
  • technology

Published Papers (7 papers)

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Editorial

Jump to: Research, Review

5 pages, 219 KiB  
Editorial
Modern Solutions for Functional Coatings in CVD Processes
by Igor K. Igumenov and Vladimir V. Lukashov
Coatings 2022, 12(9), 1265; https://doi.org/10.3390/coatings12091265 - 30 Aug 2022
Cited by 6 | Viewed by 1305
Abstract
Today, many technologies for the deposition of various functional coatings using volatile compounds are united under the general name chemical vapor deposition processes from the gas phase (CDV, MOCVD, ALD, CVI, PECVD, etc [...] Full article
(This article belongs to the Special Issue Chemical Vapor Deposition (CVD) of Coatings and Films)

Research

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23 pages, 12377 KiB  
Article
Early Periods of Low-Temperature Linear Antenna CVD Nucleation and Growth Study of Nanocrystalline Diamond Films
by Awadesh Kumar Mallik, Wen-Ching Shih, Paulius Pobedinskas and Ken Haenen
Coatings 2024, 14(2), 184; https://doi.org/10.3390/coatings14020184 - 31 Jan 2024
Cited by 1 | Viewed by 808
Abstract
Low-temperature growth of diamond films using the chemical vapor deposition (CVD) method is not so widely reported and its initial periods of nucleation and growth phenomenon are of particular interest to the researchers. Four sets of substrates were selected for growing diamond films [...] Read more.
Low-temperature growth of diamond films using the chemical vapor deposition (CVD) method is not so widely reported and its initial periods of nucleation and growth phenomenon are of particular interest to the researchers. Four sets of substrates were selected for growing diamond films using linear antenna microwave plasma-enhanced CVD (LA-MPCVD). Among them, silicon and sapphire substrates were pre-treated with detonation nanodiamond (DND) seeds before diamond growth, for enhancement of its nucleation. Carbon nanotube (CNT) films on Si substrates were also used as another template for LA-MPCVD diamond growth. To enhance diamond nucleation during CVD growth, some of the CNT films were again pre-treated by the electrophoretic deposition (EPD) of diamond nanoparticles. All these substrates were then put inside the LA-MPCVD chamber to grow diamond films under variable processing conditions. Microwave input powers (1100–2800 W), input power modes (pulse or continuous), antenna-to-stage distances (5–6.5 cm), process gas recipes (with or without CO2), methane gas percentages (3%–5%), and deposition times (11–120 min) were altered to investigate their effect on the growth of diamond film on the pre-treated substrates. The substrate temperatures were found to vary from as low as 170 °C to a maximum of 307 °C during the alteration of the different processing parameters. Contrary to the conventional MPCVD, it was observed that during the first hour of LA-MPCVD diamond growth, DND seeds and the nucleating structures do not coalesce together to make a continuous film. Deposition time was the most critical factor in fully covering the substrate surfaces with diamond film, since the substrate temperature could not become stable during the first hour of LA-MPCVD. CNTs were found to be oxidized rapidly under LA-MPCVD plasma conditions; therefore, a CO2-free process gas recipe was used to reduce CNT burning. Moreover, EPD-coated CNTs were found to be less oxidized by the LACVD plasma during diamond growth. Full article
(This article belongs to the Special Issue Chemical Vapor Deposition (CVD) of Coatings and Films)
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23 pages, 114990 KiB  
Article
Numerical Simulation of a Simplified Reaction Model for the Growth of Graphene via Chemical Vapor Deposition in Vertical Rotating Disk Reactor
by Bo Yang, Ni Yang, Dan Zhao, Fengyang Chen, Xingping Yuan, Yanqing Hou and Gang Xie
Coatings 2023, 13(7), 1184; https://doi.org/10.3390/coatings13071184 - 30 Jun 2023
Viewed by 1455
Abstract
The process of graphene growth by CVD involves a series of complex gas-phase surface chemical reactions, which generally go through three processes, including gas phase decomposition, surface chemical reaction, and gas phase diffusion. The complexity of the CVD process for growing graphene is [...] Read more.
The process of graphene growth by CVD involves a series of complex gas-phase surface chemical reactions, which generally go through three processes, including gas phase decomposition, surface chemical reaction, and gas phase diffusion. The complexity of the CVD process for growing graphene is that it involves not only chemical reactions but also mass, momentum, and energy transfer. To solve these problems, the method of numerical simulation combined with the reactor structure optimization model provides a good tool for industrial production and theoretical research to explore the influencing factors of the CVD growth of graphene. The objective of this study was to establish a simplified reaction model for the growth of graphene by chemical vapor deposition(CVD) in a vertical rotating disk reactor (VRD). From a macroscopic modeling perspective, computational fluid dynamics (CFD) was used to investigate the conditions for the growth of graphene by chemical vapor deposition in a high-speed rotating vertical disk reactor on a copper substrate surface at atmospheric pressure (101,325 Pa). The effects of gas temperature, air inlet velocity, base rotation speed, and material ratio on the surface deposition rate of graphene in a VRD reactor were studied, and the technological conditions for the preparation of graphene via the CVD method in a VRD reactor based on a special structure were explored. Compared with existing models, the numerical results showed the following: the ideal growth conditions of graphene prepared using a CVD method in a VRD reactor involve a growth temperature of 1310 K, an intake speed of 470 mL/min, a base speed of 300 rpm, and an H2 flow rate of 75 sccm; thus, more uniform graphene with a better surface density and higher quality can be obtained. The effect of the carbon surface deposition rate on the growth behavior of graphene was studied using molecular dynamics (MD) from a microscopic perspective. The simulation showed that the graphene surface deposition rate could control the nucleation density of graphene. The combination of macro- and microsimulation methods was used to provide a theoretical reference for the production of graphene. Full article
(This article belongs to the Special Issue Chemical Vapor Deposition (CVD) of Coatings and Films)
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20 pages, 6966 KiB  
Article
Numerical Simulation of Graphene Growth by Chemical Vapor Deposition Based on Tesla Valve Structure
by Bo Yang, Ni Yang, Dan Zhao, Fengyang Chen, Xingping Yuan, Bin Kou, Yanqing Hou and Gang Xie
Coatings 2023, 13(3), 564; https://doi.org/10.3390/coatings13030564 - 06 Mar 2023
Viewed by 1281
Abstract
Chemical vapor deposition (CVD) has become an important method for growing graphene on copper substrates in order to obtain graphene samples of high quality and density. This paper mainly focuses on the fluid flow and transmission phenomenon in the reactor under different process [...] Read more.
Chemical vapor deposition (CVD) has become an important method for growing graphene on copper substrates in order to obtain graphene samples of high quality and density. This paper mainly focuses on the fluid flow and transmission phenomenon in the reactor under different process operating conditions and reactor structures. Two macroscopic physical parameters that are established as important for CVD growth are temperature and pressure. Based on the special structure of a miniature T45-R Tesla valve acting as a CVD reactor structure, this study uses numerical simulation to determine the effect of the pressure field inside a Tesla valve on graphene synthesis and temperature variation on the graphene surface deposition rate. This macroscopic numerical modeling was compared to the existing straight tube model and found to improve the graphene surface deposition rate by two orders of magnitude when the 1290–1310 K reaction temperature range inside the Tesla valve was maintained and verified through the experiment. This study provides a reference basis for optimizing the reactor geometry design and the effects of changing the operating parameters on carbon deposition rates during a CVD reaction, and will furthermore benefit future research on the preparation of high-quality, large-area, and high-density graphene by CVD. Full article
(This article belongs to the Special Issue Chemical Vapor Deposition (CVD) of Coatings and Films)
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20 pages, 3443 KiB  
Article
Metal-Organic Chemical Vapor Deposition Precursors: Diagnostic Check for Volatilization Thermodynamics of Scandium(III) β-Diketonates
by Alexander M. Makarenko, Dzmitry H. Zaitsau and Kseniya V. Zherikova
Coatings 2023, 13(3), 535; https://doi.org/10.3390/coatings13030535 - 01 Mar 2023
Cited by 4 | Viewed by 1500
Abstract
Scandium complexes with β-diketonate ligands are valuable precursors for the metal–organic chemical vapor deposition (MOCVD) of scandia based materials, but data on their volatilization thermodynamics crucial to MOCVD technology are in a huge disarray. We have addressed this issue with a diagnostic tool [...] Read more.
Scandium complexes with β-diketonate ligands are valuable precursors for the metal–organic chemical vapor deposition (MOCVD) of scandia based materials, but data on their volatilization thermodynamics crucial to MOCVD technology are in a huge disarray. We have addressed this issue with a diagnostic tool based on the principles of group additivity and structure–property relationships, which had been developed by us specifically for metal–organic objects. For this purpose, a mass of experimental data on the vapor pressures and enthalpies of sublimation, vaporization and fusion available in the literature for scandium(III) β-diketonates has been compiled and analyzed. Additionally, saturated vapor pressures and thermodynamic sublimation characteristics have been obtained for scandium(III) complexes with acetylacetone, hexafluoroacetylacetone, and 3-methyl-2,4-pentanedione by transpiration and thermogravimetric methods. New data have allowed us to arbitrate the conflict of literature data. As a result, a consistent set of enthalpies of the three discussed processes has been obtained for eight scandium complexes. Dispersion interactions and non-additive effects have been shown to be typical for metal tris-β-diketonates. They have been taken into account to improve the diagnostic check. It is now possible to quite easily assess the thermodynamics of tris-β-diketonate complexes with different metals which are in demand as precursors in gas-phase technology. Full article
(This article belongs to the Special Issue Chemical Vapor Deposition (CVD) of Coatings and Films)
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Graphical abstract

11 pages, 3999 KiB  
Article
Simulation of Light-Trapping Characteristics of Self-Assembled Nano-Ridges in Ternary Organic Film
by Chang Li, Mingxin Chen, Fen Li, Xiaoxiang Sun, Zhuoliang Yu, Jiayou Tao, Zhijun Zou, Gaohua Liao and Jianjun Zhang
Coatings 2022, 12(9), 1340; https://doi.org/10.3390/coatings12091340 - 15 Sep 2022
Cited by 1 | Viewed by 1392
Abstract
The presence of self-assembled nano-ridged (SANR) structures in PTB7-Th:PC70BM:PC60BM ternary organic blend film with the specific component ratio was experimentally clarified, and the light-trapping effect of the SANR structures was demonstrated. On this basis, the light-trapping characteristics of the [...] Read more.
The presence of self-assembled nano-ridged (SANR) structures in PTB7-Th:PC70BM:PC60BM ternary organic blend film with the specific component ratio was experimentally clarified, and the light-trapping effect of the SANR structures was demonstrated. On this basis, the light-trapping characteristics of the PTB7-Th:PC70BM:PC60BM ternary blend film with the SANR structures were investigated by using the finite-difference time-domain (FDTD) algorithm. The results showed that the SANR structures have a light-trapping effect, which can effectively reduce the transmittance and reflectance of the incident photons at the specific wavelengths and thus exhibit stronger photon absorption, especially for the photons in the wavelength range of 550–650 nm. The light-trapping effect of the SANR structures does not depend on the direction of photon incidence, and the active layer traps the photons incident from both its top and bottom. The dimensional variation of the SANR has a significant effect on the light-trapping characteristics of the active layer, and the effect caused by the height variation is overwhelmingly superior compared with that of the width variation. In addition, the higher the density of the SANR, the more significant the light-trapping effect of the active layer. This work provides a theoretical basis for the further experimental enhancement of the photon absorption capacity of the PTB7-Th:PC70BM:PC60BM active layer with SANR structures. Full article
(This article belongs to the Special Issue Chemical Vapor Deposition (CVD) of Coatings and Films)
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Review

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28 pages, 3295 KiB  
Review
Chemical Vapor Deposition of Zirconium Compounds: A Review
by Benjamin Weitkamp Lamm and David Joseph Mitchell
Coatings 2023, 13(2), 266; https://doi.org/10.3390/coatings13020266 - 23 Jan 2023
Cited by 3 | Viewed by 2467
Abstract
Coatings of zirconium compounds are used in a wide variety of fields, yet an understanding and descriptions of deposition mechanisms are scant in the public literature. The mechanisms of deposition for metallic zirconium, ZrC, ZrN, ZrO2, ZrB2, and zirconium [...] Read more.
Coatings of zirconium compounds are used in a wide variety of fields, yet an understanding and descriptions of deposition mechanisms are scant in the public literature. The mechanisms of deposition for metallic zirconium, ZrC, ZrN, ZrO2, ZrB2, and zirconium silicides are discussed based on the direct vapor deposition research of those compounds where possible or compared to complementary titanium systems when direct research is lacking. Both inorganic and organometallic deposition systems are discussed. As a class of compounds, an understanding of the vapor deposition mechanisms can be significantly improved by investigations on metallic zirconium deposition by zirconium halides and hydrogen and by in situ analysis techniques such as Fourier-transform infrared (FTIR) spectroscopy or x-ray photoelectron spectroscopy (XPS). Full article
(This article belongs to the Special Issue Chemical Vapor Deposition (CVD) of Coatings and Films)
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