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Semiconductor Thin Films and Coatings: Microstructure, Properties, and Applications
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Semiconductor Thin Films and Coatings: Microstructure, Properties, and Applications

A special issue of Coatings (ISSN 2079-6412). This special issue belongs to the section "Thin Films".

Deadline for manuscript submissions: closed (31 December 2023) | Viewed by 2099

Special Issue Editor

Prof. Dr. Yanli Pei

E-Mail Website
Guest Editor
School of Electronics and Information technology, Sun Yat-sen University, Guangzhou, China
Interests: compound semiconductor materials and devices; 1. research on electronic devices based on oxide semiconductor: (1) high performance thin film transistor printable electronic device sensor, (2) wide band gap oxide semiconductor high power high frequency device; 2. research on neuro-like mimicry devices for artificial intelligence; 3. research on non-volatile memory devices

Special Issue Information

Dear Colleagues,

A semiconductor thin film is a thin film formed of semiconductor material. Semiconducting thin films are fundamental structures used in microelectronics, nanoelectronics, and biological systems. Single-crystalline, polycrystalline, or amorphous semiconductor thin films are commonly used in devices such as thin-film transistors, sensors, photodetectors, and solar cells. With the development of thin-film preparation technology, the scientific community is gradually valuing various functional semiconductor thin films. Semiconductor thin films are also widely used in multiple fields. This issue provides a platform for scholars in related fields to discuss the microstructure, performance, and application of semiconductor thin films/coatings.

In this Special Issue, original research articles and reviews are welcome. Research areas may include (but are not limited to) the following:

  • Single crystal, polycrystal, or amorphous semiconductor thin films.
  • Novel semiconductor thin film coating methods.
  • Characterization of semiconductor thin films, microstructure, electrical, and optical properties.
  • Semiconductor thin film applications, TFT, sensors, or others.

We look forward to receiving your contributions!

Prof. Dr. Yanli Pei
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Coatings is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • semiconductor thin film
  • coating method
  • semiconductor thin film characterization
  • semiconductor thin film application

Published Papers (2 papers)

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Research

10 pages, 2019 KiB  
Communication
High-Frequency Conductivity of Amorphous and Crystalline Sb2Te3 Thin Films
by Rene Castro, Aleksei Kononov and Nadezhda Anisimova
Coatings 2023, 13(5), 950; https://doi.org/10.3390/coatings13050950 - 18 May 2023
Viewed by 840
Abstract
The results of study of charge transfer processes in thin amorphous and crystalline Sb2Te3 films in a wide range of frequencies and temperatures are presented. The frequency spectra of conductivity were obtained by the dielectric spectroscopy method. The authors analyzed [...] Read more.
The results of study of charge transfer processes in thin amorphous and crystalline Sb2Te3 films in a wide range of frequencies and temperatures are presented. The frequency spectra of conductivity were obtained by the dielectric spectroscopy method. The authors analyzed the frequency dependences of the conductivity in the electric field and the temperature dependences of the exponent s. A transition from the classical correlated barrier hopping (CBH) to quantum mechanical tunneling (QMT) was observed at a certain temperature Tt. The CBH model allowed the authors to calculate the conductivity parameters of two phases. Two areas with different types of conductivity were revealed on the conduction spectra, and the activation energies of charge transfer processes for amorphous and crystalline films were determined. The following features were discovered: the difference in the temperatures of the change of the charge transfer mechanism and the transition from the semiconductor region to the metal region on the temperature dependence of conductivity. They can help to identify the amorphous phase in the quasi-binary chalcogenide Sb2Te3-GeTe system. Full article
(This article belongs to the Special Issue Semiconductor Thin Films and Coatings: Microstructure, Properties, and Applications)
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11 pages, 3930 KiB  
Article
Enhancing the Thermal Stability and Reducing the Resistance Drift of Sb Phase Change Films by Adding In2Se3 Interlayers
by Feng Su, Yifeng Hu, Xiaoqin Zhu and Tianshu Lai
Coatings 2023, 13(5), 927; https://doi.org/10.3390/coatings13050927 - 15 May 2023
Cited by 1 | Viewed by 1086
Abstract
In this paper, pure Sb and composite multilayer In2Se3/Sb thin films were prepared on a SiO2/Si substrate. The effects of the addition of In2Se3 interlayers on the physical and electrical properties of phase change [...] Read more.
In this paper, pure Sb and composite multilayer In2Se3/Sb thin films were prepared on a SiO2/Si substrate. The effects of the addition of In2Se3 interlayers on the physical and electrical properties of phase change thin films were investigated. Compared with pure Sb film, the composite multilayer In2Se3/Sb film had a higher crystallization temperature (~145 °C), larger crystallization activation energy (~2.48 eV), less resistance drift (~0.0238) and better thermal stability. The results of X-ray photoelectron spectroscopy indicated that the In-Sb bond was formed in the multilayer In2Se3/Sb film. The near infrared spectrophotometer showed that the band gap changed at different annealing temperatures. Changing the annealing temperature of the film allowed for the phase structure of the film to be studied by using X-ray diffractometer. The surface morphology and electrostatic potential at different annealing temperatures were using atomic force microscope. It was found that the flat film had a smoother surface. Phase-change memory devices based on [In2Se3(4 nm)/Sb(6 nm)]8 film reduced power consumption by approximately 74% compared to pure Sb film. In conclusion, the In2Se3 interlayers effectively inhibited the resistance drift of the phase change thin film and enhanced its thermal stability. Full article
(This article belongs to the Special Issue Semiconductor Thin Films and Coatings: Microstructure, Properties, and Applications)
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