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Journal: Electron. Mater., 2022
Volume: 3
Number: 3

Article: Defect- and H-Free Stoichiometric Silicon Carbide by Thermal CVD from the Single Source Precursor Trisilacyclohexane
Authors: by Alain E. Kaloyeros, Jonathan Goff and Barry Arkles
Link: https://www.mdpi.com/2673-3978/3/1/3

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