Ferroelectric Devices for Content-Addressable Memory
, Valentin Antonov 1, Andrey Miakonkikh 2 and Konstantin Rudenko 2
John M. Acken
Round 1
Reviewer 1 Report
The paper is good for the technology review, however, it is a bit short on the CAM review and analysis. For example, actual area comparison values for the various CAM cells in figure 9. would be good.
Also, Table 1 needs some better description in the text - particularly the row labeled @0.
Author Response
A comparison of various CAM cells is presented in Table 3.
Table 1 has been edited.
Author Response File: 
Author Response.pdf
Reviewer 2 Report
Nice review. I have some suggestions as listed following.
S1: Most contents discussed the ferroelectric devices, and only a small part of the manuscript discussed the CAM. So I suggest changing the title.
S2: I recommend adding some recent work.
S3: The “STP” on page 6 is a typo, please check the full manuscript carefully.
Author Response
S1: The title of the article has been changed to “Ferroelectric devices for content-addressable memory”.
S2: We think that the new results are well reflected in the article.
S3: Typos on page 6 corrected.
Author Response File: Author Response.pdf
