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Journal: Nanomaterials, 2022
Volume: 12
Number: 2299

Article: Device and Circuit Analysis of Double Gate Field Effect Transistor with Mono-Layer WS2-Channel at Sub-2 nm Technology Node
Authors: by Jihun Park, Changho Ra, Jaewon Lim and Jongwook Jeon
Link: https://www.mdpi.com/2079-4991/12/13/2299

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