Progress, Challenges, and Opportunities for Photodetectors

Topic Information

Dear Colleagues,

Photodetectors (PDs) are components of paramount importance in a vast number of applications, including fiber optic communications, environmental sensing, process control, safety and security, defense and so on. Silicon (Si) PDs have been widely developed in the visible spectrum and have revolutionized the market of camcorders and mobile phones. More recently, many emerging all-silicon approaches and devices realized in standard CMOS foundries, without requiring change to the process flow-chart (zero-change CMOS), have shown impressive performance in detecting near-infrared (NIR) wavelengths. However, III-V semiconductors remain probably the best materials for detecting NIR spectra at a high efficiency, and the recent advances in this field have led to a high bandwidth that also makes III-V PDs suitable for THz receivers, which are widely employed for security applications. On the other hand, infrared (IR) thermal detectors, such as thermopile, bolometers, and pyroelectric devices, are important devices whose advances have been guided by both civil and military applications, while Type II strained layer superlattice (SLS) detectors are becoming fundamental components in imaging systems and high-resolution thermal detection. In this context, two-dimensional materials, such as graphene or molybdenum disulphide, are showing their huge potential, and nowadays low-weight, flexible all-2D PDs have shown good performance in a broadband spectrum, including ultraviolet (UV), which is also of great interest for environmental monitoring and biological applications in the context of lab-on-chip systems. In addition, organic materials are playing an increasingly important role in the photodetection field for emerging wearable, energy-harvesting, and health-care applications. Finally, in recent decades, the challenge of detecting single photons has been taken up by the scientific community, and nowadays, quantum computers based on this technology are a reality.

This Topic aims to provide readers with a detailed overview of the current state-of-the-art in the fascinating world of photodetectors. Starting from the well-established technology, the object of this Topic is to present photodetectors based on new structures, physical effects and materials in order to show how this photonic device, born as a simple image sensor, is becoming increasingly attractive in a vast number of applications, ranging from wearable sensing to quantum computers.

In this Topic, original research articles and reviews are welcome. Research areas may include, but are not limited to, the following:

• Infrared detector;
• Type II SLS detector;
• Quantum detector;
• Avalanche photodetector;
• CMOS-compatible photodetector;
• THz detector;
• Thermal detector;
• Detector based on 2D materials;
• Organic detector;
• UV detector.

We look forward to receiving your contributions.

Dr. Maurizio Casalino
Prof. Dr. Ha Sul Kim
Prof. Dr. Yu-Hwa Lo
Topic Editors

Participating Journals

Journal Name	Impact Factor	CiteScore	Launched Year	First Decision (median)	APC
Applied Sciences applsci	2.7	4.5	2011	16.9 Days	CHF 2400
Eng eng	-	-	2020	18.7 Days	CHF 1200
Micromachines micromachines	3.4	4.7	2010	16.1 Days	CHF 2600
Photonics photonics	2.4	2.3	2014	15.5 Days	CHF 2400
Sensors sensors	3.9	6.8	2001	17 Days	CHF 2600

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Published Papers (5 papers)

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All Applied Sciences Eng Micromachines Photonics Sensors

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16 pages, 4847 KiB  

Open AccessArticle

Long-Wave Infrared Polarization-Based Airborne Marine Oil Spill Detection and Identification Technology

by Hongyu Sun, Lianji Ma, Qiang Fu, Yingchao Li, Haodong Shi, Zhuang Liu, Jianan Liu, Jiayu Wang and Huilin Jiang

Photonics 2023, 10(5), 588; https://doi.org/10.3390/photonics10050588 - 18 May 2023

Cited by 1 | Viewed by 1550

Abstract

In this paper, infrared polarization detection information acquisition technology is proposed, and the polarization characteristics of oil spills are modeled and studied. A set of long-wave infrared polarization detection equipment for oil spills is designed and built, and modeling research on oil spill [...] Read more.

In this paper, infrared polarization detection information acquisition technology is proposed, and the polarization characteristics of oil spills are modeled and studied. A set of long-wave infrared polarization detection equipment for oil spills is designed and built, and modeling research on oil spill polarization characteristics is carried out to accurately detect and identify oil spill types and for the faster processing of oil spill events. Oil spill accuracy is increased by defining the polarization maintenance method of the polarization optical system and reducing the polarization measurement error brought on by the imaging system. As a result, a higher than 3% contrast exists between the polarization degree image and the corrected infrared intensity image. Outdoor tests using oil, palm oil, crude oil, gasoline, and diesel oil spill types are carried out in a controlled environment to collect data on the polarization of various oil species. According to the findings, each oil species’ infrared polarization contrast with seawater is typically greater than its infrared intensity contrast. However, the polarization data of saltwater, diesel, and palm oil, which are difficult to identify in intensity data, show a noticeable difference, further proving the viability of utilizing polarization to discern oil spills. Full article

(This article belongs to the Topic Progress, Challenges, and Opportunities for Photodetectors)

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13 pages, 2726 KiB  

Open AccessArticle

Mono- and Bilayer Graphene/Silicon Photodetectors Based on Optical Microcavities Formed by Metallic and Double Silicon-on-Insulator Reflectors: A Theoretical Investigation

by Teresa Crisci, Luigi Moretti, Mariano Gioffrè and Maurizio Casalino

Micromachines 2023, 14(5), 906; https://doi.org/10.3390/mi14050906 - 23 Apr 2023

Cited by 1 | Viewed by 1141

Abstract

In this work, we theoretically investigate a graphene/silicon Schottky photodetector operating at 1550 nm whose performance is enhanced by interference phenomena occurring inside an innovative Fabry–Pèrot optical microcavity. The structure consists of a hydrogenated amorphous silicon/graphene/crystalline silicon three-layer realized on the top of [...] Read more.

In this work, we theoretically investigate a graphene/silicon Schottky photodetector operating at 1550 nm whose performance is enhanced by interference phenomena occurring inside an innovative Fabry–Pèrot optical microcavity. The structure consists of a hydrogenated amorphous silicon/graphene/crystalline silicon three-layer realized on the top of a double silicon-on-insulator substrate working as a high-reflectivity input mirror. The detection mechanism is based on the internal photoemission effect, and the light-matter interaction is maximized through the concept of confined mode, exploited by embedding the absorbing layer within the photonic structure. The novelty lies in the use of a thick layer of gold as an output reflector. The combination of the amorphous silicon and the metallic mirror is conceived to strongly simplify the manufacturing process by using standard microelectronic technology. Configurations based on both monolayer and bilayer graphene are investigated to optimize the structure in terms of responsivity, bandwidth, and noise-equivalent power. The theoretical results are discussed and compared with the state-of-the-art of similar devices. Full article

(This article belongs to the Topic Progress, Challenges, and Opportunities for Photodetectors)

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12 pages, 9497 KiB  

Open AccessArticle

Simulation on Secondary Electron Multiplication Behavior of the Microchannel Plate under DC Mode

by Fengyan Li, Dongyu Jiang, Peng Jiao, Yong Sun and Yonggang Huang

Photonics 2022, 9(12), 978; https://doi.org/10.3390/photonics9120978 - 13 Dec 2022

Viewed by 1518

Abstract

In this study, a three-dimensional microchannel model of a single hollow-core glass fiber was constructed and the Finite Integral Technique and Monte Carlo method were combined to comprehensively simulate the electron multiplication process in a single channel under DC mode. The electron dynamic [...] Read more.

In this study, a three-dimensional microchannel model of a single hollow-core glass fiber was constructed and the Finite Integral Technique and Monte Carlo method were combined to comprehensively simulate the electron multiplication process in a single channel under DC mode. The electron dynamic trajectory in DC electron emission mode was achieved. The effects of different structural parameters and applied bias voltage on the electron gain and the most probable exit energy at the output end of MCP were investigated. The results show that the electrons with a certain initial current can be continuously and stably multiplied in the channel under DC mode and eventually reach a stable value because of the space charge effect; additionally, the electron gain increases with the increase in the bias angle and DC bias voltage and decreases with the increase in the penetration depth of the MCP output electrode. The electron gain at the output end of the MCP increases with the length-to-diameter ratio under the normalized voltage but shows a maximum value under the constant voltage. The simulation results are consistent with the reported experimental trend and theoretical analyses. The method provides data support for the optimal structural design of the microchannel plate. Full article

(This article belongs to the Topic Progress, Challenges, and Opportunities for Photodetectors)

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0 pages, 5294 KiB  

Open AccessArticle

The Effects of Different Anode Positions on the Electrical Properties of Square-Silicon Drift Detector

by Wei Luo, Longjie Wang, Rui Jia, Ke Tao, Bolong Wang, Xiaoping Ouyang and Xing Li

Micromachines 2022, 13(9), 1496; https://doi.org/10.3390/mi13091496 - 08 Sep 2022

Cited by 1 | Viewed by 1404 | Correction

Abstract

The Silicon Drift Detector (SDD) with square structure is often used in pixel-type SDD arrays to reduce the dead region considerably and to improve the detector performance significantly. Usually, the anode is located in the center of the active region of the SDD [...] Read more.

The Silicon Drift Detector (SDD) with square structure is often used in pixel-type SDD arrays to reduce the dead region considerably and to improve the detector performance significantly. Usually, the anode is located in the center of the active region of the SDD with square structure (square-SDD), but the different anode positions in the square-SDD active area are also allowed. In order to explore the effect on device performance when the anode is located at different positions in the square-SDD active region, we designed two different types of square-SDD in this work, where the anode is located either in the center (SDD-1) or at the edge (SDD-2) of its active region. The simulation results of current density and potential distribution show that SDD-1 and SDD-2 have both formed a good electron drift path to make the anode collect electrons. The experimental results of device performance at the temperature range from −60 °C to 60 °C show that the anode current of the two fabricated SDDs both decreased with the decrease of temperature, but their voltage divider characteristics exhibited high stability resistance value and low temperature coefficient, thereby indicating that they could both provide corresponding continuous and uniform electric field at different temperatures. Finally, SDD-1 and SDD-2 have energy resolutions of 248 and 257 eV corresponding to the 5.9 keV photon peak of the Fe-55 radioactive source, respectively. Our experimental results demonstrate that there is no significant impact on the device performance irrespective of the anode positions in the square-SDD devices. Full article

(This article belongs to the Topic Progress, Challenges, and Opportunities for Photodetectors)

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14 pages, 3803 KiB  

Open AccessArticle

A Real-Time Monitoring Method for Civil Aircraft Take-Off and Landing Based on Synthetic Aperture Microwave Radiation Technology

by Houcai Chen, Junxiang Ge, Deqing Kong, Zhenwei Zhao and Qinglin Zhu

Sensors 2022, 22(10), 3675; https://doi.org/10.3390/s22103675 - 12 May 2022

Cited by 1 | Viewed by 1381

Abstract

It is important to monitor the take-off and landing of civil aircraft using passive detection methods. Due to the strict aircraft safety requirements and the electromagnetic environment around an airport, using too many active detection methods should be avoided. Using an aircraft’s microwave [...] Read more.

It is important to monitor the take-off and landing of civil aircraft using passive detection methods. Due to the strict aircraft safety requirements and the electromagnetic environment around an airport, using too many active detection methods should be avoided. Using an aircraft’s microwave radiation signal detection is very advantageous because it does not actively emit signals and has a strong cloud penetration, suitable for all-weather observation. This paper introduces a synthetic aperture microwave radiation system for monitoring the take-off and landing of civil aircraft, which is characterized by real-time two-dimensional imaging, and the image refresh rate can reach 10 ms, which meets the high refresh rate requirements for aircraft imaging. Applicable system parameters and antenna array distribution scheme and imaging algorithm are given. Then the paper focuses on the error analysis and correction method of the system. The correction method is simple and fast, which avoids the disadvantage that the error needs to be corrected regularly in the laboratory environment, and is suitable for airport application. Finally, the simulation and experimental results show that this technology can be used for real-time monitoring of civil aircraft during take-off and landing, and it is a practical means to assisting landing. Full article

(This article belongs to the Topic Progress, Challenges, and Opportunities for Photodetectors)

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