Micro/Nanofabrication of Silicon Metal–Oxide–Semiconductor Devices
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D：Materials and Processing".
Deadline for manuscript submissions: closed (15 November 2020) | Viewed by 196
Special Issue Editors
Interests: MOS technology; silicon nanofabrication; nanoelectronics
Interests: MOS technology; silicon quantum computing; nanoelectronics
Special Issue Information
Dear Colleagues,
The silicon metal–oxide–semiconductor (MOS) is the core structure of modern-day integrated circuit (IC) chips. Due to the demand for high-performance and high-density ICs, MOS devices have been continuously scaled down for the past five decades. However, the increasing miniaturisation will eventually hit fundamental limitations such as heat dissipation, scalability and, more prominently, the quantum mechanical effects. To overcome these issues, we should leverage on the quantum phenomenon to engineer MOS-based quantum devices. Such technology relies on the exploration of advanced micro- and nanofabrication technologies, processes, structures and new materials. As the semiconductor industries and foundries have been well developed for many decades, it is extremely beneficial to develop quantum technology based on silicon MOS fabrication processes, for instance, silicon quantum dots for quantum computing and single electron transistors for quantum metrology.
This Special Issue of Micromachines seeks to showcase research papers, short communications, and review articles that focus on new techniques and recent developments in engineering metal–oxide–semiconductor devices and their applications. Topics of interest for this Special Issue include but are not limited to: (1) methodology and applications of an advanced fabrication process of silicon MOS devices; (2) improvements of the quality of gate dielectric; and (3) improvements of device performance via bandgap and strain engineering, and novel architectures such as FinFET and ultrathin body.
Dr. Fay Hudson
Dr. Wee Han Lim
Dr. Kok Wai Chan
Guest Editors
Manuscript Submission Information
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Keywords
- micro- and nano-device fabrication
- MOS devices
- silicon quantum devices
